N-Channel 100 V (D-S) MOSFET
FEATURES
PRODUCT SUMMARY
V
DS
(V)
100
R
DS(on)
()
0.095 at V
GS
= 10 V
0.100 at V
GS
= 6 V
I
D
(A)
15
15
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DTU15N10
• TrenchFET
®
Power MOSFETS
• 175 °C Junction Temperature
• 100 % R
g
Tested
APPLICATIONS
D
• Primary Side Switch
TO-252
G
G
D
S
S
N-Channel MOSFET
Top View
ABSOLUTE MAXIMUM RATINGS
(T
C
= 25 °C, unless otherwise noted)
Parameter
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current (T
J
= 175 °C)
b
Pulsed Drain Current
Continuous Source Current (Diode Conduction)
Avalanche Current
Repetitive Avalanche Energy (Duty Cycle
1 %)
Maximum Power Dissipation
Operating Junction and Storage Temperature Range
L = 0.1 mH
T
C
= 25 °C
T
A
= 25 °C
T
C
= 25 °C
T
C
= 125 °C
Symbol
V
DS
V
GS
I
D
I
DM
I
S
I
AR
E
AR
P
D
T
J
, T
stg
Limit
100
± 20
15
8.7
25
15
15
11.3
62
b
2.7
a
- 55 to 175
mJ
W
°C
A
Unit
V
THERMAL RESISTANCE RATINGS
Parameter
Junction-to-Ambient
a
Junction-to-Case
Notes:
a. Surface mounted on 1" x 1" FR4 board.
b. See SOA curve for voltage derating.
t
10 s
Steady State
Symbol
R
thJA
R
thJC
Typical
16
45
2
Maximum
20
55
2.4
°C/W
Unit
1
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SPECIFICATIONS
(T
J
= 25 °C, unless otherwise noted)
Parameter
Static
Drain-Source Breakdown Voltage
Gate Threshold Voltage
Gate-Body Leakage
Zero Gate Voltage Drain Current
On-State Drain Current
b
V
DS
V
GS(th)
I
GSS
I
DSS
I
D(on)
V
GS
= 0 V, I
D
= 250 µA
V
DS
= V
GS
, I
D
= 250 µA
V
DS
= 0 V, V
GS
= ± 20 V
V
DS
= 100 V, V
GS
= 0 V
V
DS
= 100 V, V
GS
= 0 V, T
J
= 125 °C
V
DS
= 100 V, V
GS
= 0 V, T
J
= 175 °C
V
DS
=5 V, V
GS
= 10 V
V
GS
= 10 V, I
D
= 15 A
Drain-Source On-State Resistance
b
R
DS(on)
V
GS
= 10 V, I
D
= 15 A, T
J
= 125 °C
V
GS
= 10 V, I
D
= 15 A, T
J
= 175 °C
V
GS
= 6 V, I
D
= 10 A
Forward Transconductance
b
Dynamic
a
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Total Gate
Charge
c
Gate-Source Charge
c
Gate-Drain Charge
c
Gate Resistance
Turn-On Delay Time
c
Rise Time
c
Turn-Off Delay Time
Fall Time
c
Pulsed Current
Diode Forward Voltage
b
Source-Drain Reverse Recovery Time
c
DTU15N10
Symbol
Test Conditions
Min.
100
2
Typ.
a
Max.
Unit
V
± 100
1
50
250
µA
A
0.077
0.095
0.190
0.250
0.081
25
900
0.100
S
nA
15
g
fs
C
iss
C
oss
C
rss
Q
g
Q
gs
Q
gd
R
g
t
d(on)
t
r
t
d(off)
t
f
I
SM
V
SD
t
rr
V
DS
= 15 V, I
D
= 15 A
V
GS
= 0 V, V
DS
= 25 V, f = 1 MHz
115
70
20
25
pF
V
DS
= 75 V, V
GS
= 10 V, I
D
= 15 A
1
5.5
7
3.2
8
12
55
25
45
15
35
17
30
nC
V
DD
= 75 V, R
L
= 5
I
D
15 A, V
GEN
= 10 V, R
G
= 2.5
ns
Source-Drain Diode Ratings and Characteristic
(T
C
= 25 °C)
A
V
ns
I
F
= 15 A, V
GS
= 0 V
I
F
= 15 A, dI/dt = 100 A/µs
0.9
55
1.5
85
Notes:
a. Guaranteed by design, not subject to production testing.
b. Pulse test; pulse width
300 µs, duty cycle
2 %.
c. Independent of operating temperature.
Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation
of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum
rating conditions for extended periods may affect device reliability.
2
TYPICAL CHARACTERISTICS
(25 °C unless noted)
25
V
GS
= 10 thru 6 V
20
I D - Drain Current (A)
I D - Drain Current (A)
20
25
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DTU15N10
15
5V
10
15
10
T
C
= 125 °C
5
25 °C
- 55 °C
0
5
3V
0
0
2
4
6
8
10
4V
0
1
2
3
4
5
6
V
DS
- Drain-to-Source Voltage (V)
V
GS
- Gate-to-Source Voltage (V)
Output Characteristics
40
T
C
= - 55 °C
0.12
g fs - Transconductance (S)
32
RDS(on)- On-Resistance ()
25 °C
0.10
0.14
Transfer Characteristics
V
GS
= 6 V
0.08
V
GS
= 10 V
0.06
0.04
0.02
0.00
24
125 °C
16
8
0
0
5
10
15
20
25
I
D
- Drain Current (A)
0
5
10
15
20
25
I
D
- Drain Current (A)
Transconductance
1500
20
On-Resistance vs. Drain Current
1200
C - Capacitance (pF)
C
iss
V GS - Gate-to-Source Voltage (V)
16
V
DS
= 75 V
I
D
= 15 A
900
12
600
8
300
C
rss
C
oss
4
0
0
20
40
60
80
100
0
0
8
16
24
32
40
Q
g
- Total Gate Charge (nC)
V
DS
- Drain-to-Source Voltage (V)
Capacitance
Gate Charge
3
TYPICAL CHARACTERISTICS
(25 °C unless noted)
2.8
R DS(on)- On-Resistance (Normalized)
2.4
2.0
1.6
1.2
0.8
0.4
0.0
- 50
V
GS
= 10 V
I
D
= 15 A
I S - Source Current (A)
100
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DTU15N10
T
J
= 150 °C
10
T
J
= 25 °C
- 25
0
25
50
75
100
125
150
175
1
0
0.3
0.6
0.9
1.2
T
J
- Junction Temperature (°C)
V
SD
- Source-to-Drain Voltage (V)
On-Resistance vs. Junction Temperature
Source-Drain Diode Forward Voltage
100
THERMAL RATINGS
20
15
I D - Drain Current (A)
I D - Drain Current (A)
10
Limited by R
DS(on)
*
10 µs
100 µs
10
1
T
C
= 25 °C
Single Pulse
1 ms
10 ms
100 ms
1 s, DC
5
0
0
25
50
75
100
125
T
C
- Case Temperature (°C)
150
175
0.1
0.1
1
10
1000
100
V
DS
- Drain-to-Source Voltage (V)
* V
GS
> minimum V
GS
at which R
DS(on)
is specified
Maximum Avalanche Drain Current
vs. Case Temperature
2
1
Normalized Effective Transient
Thermal Impedance
Safe Operating Area
Duty Cycle = 0.5
0.2
0.1
0.1
0.02
0.05
Single Pulse
0.01
10
-4
10
-3
10
-2
10
-1
Square Wave Pulse Duration (sec)
1
10
Normalized Thermal Transient Impedance, Junction-to-Case
4
Package Information
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TO-252AA CASE OUTLINE
E
b3
L3
A
C2
MILLIMETERS
DIM.
A
A1
b
b2
MIN.
2.18
-
0.64
0.76
4.95
0.46
0.46
5.97
5.21
6.35
4.32
9.40
2.28 BSC
4.56 BSC
1.40
0.89
-
1.14
1.78
1.27
1.02
1.52
MAX.
2.38
0.127
0.88
1.14
5.46
0.61
0.89
6.22
-
6.73
-
10.41
MIN.
0.086
-
0.025
0.030
0.195
0.018
0.018
0.235
0.205
0.250
0.170
0.370
INCHES
MAX.
0.094
0.005
0.035
0.045
0.215
0.024
0.035
0.245
-
0.265
-
0.410
D
H
b3
C
C2
L4
L5
gage plane height (0.5 mm)
L
D
D1
E
E1
H
e
e1
L
L3
L4
L5
b
e
e1
b2
C
A1
0.090 BSC
0.180 BSC
0.055
0.035
-
0.045
0.070
0.050
0.040
0.060
D1
E1
ECN:
X12-0247-Rev.
M, 24-Dec-12
DWG: 5347
Note
• Dimension L3 is for reference only.
1
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