MBR7Hxx, MBRF7Hxx & MBRB7Hxx Series
New Product
Vishay Semiconductors
formerly General Semiconductor
Reverse Voltage
35 to 60 V
Forward Current
7.5 A
Schottky Barrier Rectifiers
ITO-220AC (MBRF7Hxx)
TO-220AC (MBR7Hxx)
0.415 (10.54) MAX.
0.154 (3.91)
0.370 (9.40)
0.360 (9.14)
0.148 (3.74)
0.113 (2.87)
0.103 (2.62)
0.145 (3.68)
0.135 (3.43)
0.410 (10.41)
0.390 (9.91)
PIN
1
0.160 (4.06)
0.140 (3.56)
2
1.148 (29.16)
1.118 (28.40)
0.110 (2.79)
0.100 (2.54)
0.560 (14.22)
0.530 (13.46)
CASE
0.405 (10.27)
0.383 (9.72)
0.185 (4.70)
0.175 (4.44)
0.188 (4.77)
0.172 (4.36)
0.110 (2.80)
0.100 (2.54)
0.140 (3.56)
DIA.
0.130 (3.30)
0.131 (3.39)
DIA.
0.122 (3.08)
DIA.
0.055 (1.39)
0.045 (1.14)
0.600 (15.5)
0.580 (14.5)
0.603 (15.32)
0.573 (14.55)
1
0.676 (17.2)
0.646 (16.4)
0.350 (8.89)
0.330 (8.38)
PIN
2
0.635 (16.13)
0.625 (15.87)
0.350 (8.89)
0.330 (8.38)
0.191 (4.85)
0.171 (4.35)
0.560 (14.22)
0.530 (13.46)
0.060 (1.52)
PIN 1
0.110 (2.80)
0.100 (2.54)
PIN 1
PIN 2
PIN 2
0.105 (2.67)
0.095 (2.41)
0.205 (5.20)
0.195 (4.95)
0.037 (0.94)
0.027 (0.68)
0.022 (0.56)
0.014 (0.36)
0.205 (5.20)
0.195 (4.95)
0.037 (0.94)
0.027 (0.69)
0.022 (0.55)
0.014 (0.36)
TO-263AB (MBRB7Hxx)
0.411 (10.45)
0.380 (9.65)
0.245 (6.22)
MIN
K
0.055 (1.40)
0.047 (1.19)
1
K
2
0.624 (15.85)
0.591 (15.00)
0-0.01 (0-0.254)
0.110 (2.79)
0.090 (2.29)
0.027 (0.686)
0.037 (0.940)
0.105 (2.67)
0.095 (2.41)
PIN 1
PIN 2
K - HEATSINK
Mounting Pad Layout TO-263AB
0.42
(10.66)
0.190 (4.83)
0.160 (4.06)
0.055 (1.40)
0.045 (1.14)
0.33
(8.38)
0.63
(17.02)
Dimensions in inches
and (millimeters)
0.360 (9.14)
0.320 (8.13)
0.08
(2.032)
0.24
(6.096)
0.12
(3.05)
0.021 (0.53)
0.014 (0.36)
0.140 (3.56)
0.110 (2.79)
0.205 (5.20)
0.195 (4.95)
Features
• Plastic package has Underwriters Laboratory
Flammability Classification 94 V-0
• Metal silicon junction, majority carrier conduction
• Low forward voltage drop, low power loss
and high efficiency
• Guardring for overvoltage protection
• For use in low voltage, high frequency inverters, free
wheeling, and polarity protection applications
• High temperature soldering guaranteed:
250 °C/10 seconds, 0.25" (6.35 mm) from case
• Rated for reverse surge and ESD
• 175 °C maximum operation junction temperature
www.vishay.com
1
Mechanical Data
Case:
JEDEC TO-220AC, ITO-220AC & TO-263AB molded
plastic body
Terminals:
Plated leads, solderable per
MIL-STD-750, Method 2026
Polarity:
As marked
Mounting Position:
Any
Mounting Torque:
10 in-lbs maximum
Weight:
0.08oz., 2.24g
Document Number 88796
4-Feb-03
MBR7Hxx, MBRF7Hxx & MBRB7Hxx Series
Vishay Semiconductors
formerly General Semiconductor
Maximum Ratings
Parameter
(T
C
= 25 °C unless otherwise noted)
Symbol
V
RRM
V
RWM
V
DC
I
F(AV)
I
FRM
E
AS
I
FSM
I
RRM
E
RSM
V
C
dv/dt
T
J
T
STG
V
ISOL
MBR7H35 MBR7H45 MBR7H50 MBR7H60
35
35
35
45
45
45
7.5
15
80
150
1.0
20
25
10,000
–65 to +175
–65 to +175
4500
(1)
3500
(2)
1500
(3)
0.5
10
50
50
50
60
60
60
Unit
V
V
V
A
A
mJ
A
A
mJ
kV
V/µs
°C
°C
V
Maximum repetitive peak reverse voltage
Working peak reverse voltage
Maximum DC blocking voltage
Max. average forward rectified current (see fig. 1)
Peak repetitive forward current at T
C
= 155 °C per leg
(rated V
R
, 20 KHz sq. wave)
Non-repetitive avalanche energy per leg
at 25
°C,
I
AS
= 4 A, L = 10 mH
Peak forward surge current 8.3ms single half sine-wave
superimposed on rated load (JEDEC Method)
Peak repetitive reverse surge current per leg
at t
p
= 2.0
µs,
1 KH
Z
Peak non-repetitive reverse energy (8/20
µs
waveform)
Electrostatic discharge capacitor voltage
Human body model: C = 100 pF, R = 1.5 kΩ
Voltage rate of change (rated V
R
)
Operating junction temperature range
Storage temperature range
RMS Isolation voltage (MBRF type only) from terminals
to heatsink with t = 1.0 second, RH
≤
30%
Electrical Characteristics
(T
C
= 25 °C unless otherwise noted)
Parameter
Maximum instantaneous
forward voltage per leg
(4)
at
at
at
at
I
F
=
I
F
=
I
F
=
I
F
=
7.5 A
7.5 A
15 A
15 A
T
J
= 25 °C
T
J
= 125 °C
T
J
= 25 °C
T
J
=125 °C
T
J
= 25 °C
T
J
=125 °C
Symbol
MBR7H35, MBR7H45
Typ
–
0.50
–
0.61
–
3.0
Max
0.63
0.55
0.75
0.66
50
10
MBR7H50, MBR7H60
Typ
–
0.58
–
0.68
–
2.0
Max
0.73
0.61
0.87
0.72
50
10
Unit
V
F
V
µA
mA
Maximum instantaneous reverse current
at rated DC blocking voltage per leg
(4)
I
R
Thermal Characteristics
(T
C
= 25 °C unless otherwise noted)
Parameter
Thermal resistance from junction to case
Notes:
(1) Clip mounting (on case), where lead does not overlap heatsink with 0.110” offset
(2) Clip mounting (on case), where leads do overlap heatsink
Symbol
R
θJC
MBR
3.0
MBRF
5.0
MBRB
3.0
Unit
°C/W
(3) Screw mounting with 4-40 screw, where washer diameter is £ 4.9 mm (0.19”)
(4) Pulse test: 300 ms pulse width, 1% duty cycle
Ordering Information
Product
MBR7H35 – MBR7H60
MBRF7H35 – MBRF7H60
MBRB7H35 – MBRB7H60
Case
TO-220AC
ITO-220AC
TO-263AB
Package Code
45
45
31
45
81
Package Option
Anti-Static tube, 50/tube, 2K/carton
Anti-Static tube, 50/tube, 2K/carton
13” reel, 800/reel, 4.8K/carton
Anti-Static tube, 50/tube, 2K/carton
Anti-Static 13” reel, 800/reel, 4.8K/carton
Document Number 88796
4-Feb-03
www.vishay.com
2
MBR7Hxx, MBRF7Hxx & MBRB7Hxx Series
New Product
Ratings and
Characteristic Curves
(T
A
= 25°C unless otherwise noted)
Fig. 1 – Forward Current
Derating Curve
10
MBR, MBRB
8
175
Vishay Semiconductors
formerly General Semiconductor
Fig. 2 – Maximum Non-Repetitive
Peak Forward Surge Current Per Leg
Peak Forward Surge Current (A)
T
J
= T
J
max.
8.3ms Single Half Sine-Wave
(JEDEC Method)
Average Forward Current (A)
150
125
100
75
50
25
6
MBRF
4
2
0
0
25
50
75
100
125
150
175
1
10
100
Case Temperature (°C)
Number of Cycles at 60 H
Z
Fig. 3 – Typical Instantaneous
Forward Characteristics Per Leg
Instantaneous Reverse Leakage Current
(mA)
100
10
Fig. 4 – Typical Reverse
Characteristics Per Leg
T
J
= 150°C
1
T
J
= 125°C
0.1
Instantaneous Forward Current (A)
10
T
J
= 150°C
1
T
J
= 25°C
T
J
= 125°C
0.01
MBR7H35 -- MBR7H45
MBR7H50 -- MBR7H60
T
J
= 25°C
0.1
MBR7H35 -- MBR7H45
MBR7H50 -- MBR7H60
0.01
0
0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1.0 1.1 1.2
0.001
0.0001
0
20
40
60
80
100
Instantaneous Forward Voltage (V)
Percent of Rated Peak Reverse Voltage (%)
Fig. 5 – Typical Junction
Capacitance Per Leg
1000
Fig. 6 – Typical Transient
Thermal Impedance Per Leg
1000
100
Transeint Thermal Impedance (°C/W)
pF - Junction Capacitance
T
J
= 25°C
f = 1.0 MH
Z
Vsig = 50mVp-p
100
10
MBR7H35 -- MBR7H45
MBR7H50 -- MBR7H60
1
0.1
1
10
100
10
0.01
0.1
1
10
Reverse Voltage (V)
Document Number 88796
4-Feb-03
t, Pulse Duration (sec.)
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