LESHAN RADIO COMPANY, LTD.
Bias Resistor Transistor
NPN Silicon Surface Mount Transistor
with Monolithic Bias Resistor Network
This new series of digital transistors is designed to replace a single
device and its external resistor bias network. The BRT (Bias Resistor
Transistor) contains a single transistor with a monolithic bias network
resistor. The BRT eliminates these individual components by
integrating them into a single device. The use of a BRT can reduce
both system cost and board space. The device is housed in the SOT-23
package which is designed for low power surface mount applications.
LMUN2211LT1G Series
S-LMUN2211LT1G Series
3
1
2
SOT–23 (TO–236AB)
•
Simplifies Circuit Design
•
Reduces Board Space and Component Count
•
The SOT-23 package can be soldered using wave or reflow. The
modified gull-winged leads absorb thermal stress during soldering
eliminating the possibility of damage to the die.
•
Available in 8 mm embossed tape and reel. Use the Device
Number to order the 7 inch/3000 unit reel. Replace “T1” with
“T3” in the Device Number to order the13 inch/10,000 unit reel.
•
S- Prefix for Automotive and Other Applications Requiring
Unique Site and Control Change Requirements; AEC-Q101
Qualified and PPAP Capable.
Rating
Collector-Base Voltage
Collector-Emitter Voltage
Collector Current
Total Power Dissipation @ T
A
= 25°C
(Note 1.) Derate above 25°C
Symbol
V
CBO
V
CEO
I
C
P
D
Value
50
50
100
*246
1.5
Unit
Vdc
Vdc
mAdc
mW
°C/W
PIN 1
BASE
(INPUT)
PIN 3
R
1
COLLECTOR
(OUTPUT)
PIN 2
EMITTER
(GROUND)
R
2
We declare that the material of product
compliance with RoHS requirements.
ORDERING INFORMATION
Device
LMUN2211LT1G
LMUN2211LT3G
Package
SOT23
SOT23
Shipping
3000/Tape&Reel
10000/Tape&Reel
MAXIMUM RATINGS
(TA = 25°C unless otherwise noted)
DEVICE MARKING AND RESISTOR VALUES
Device
LMUN2211LT1G
LMUN2212LT1G
LMUN2213LT1G
LMUN2214LT1G
LMUN2215LT1G
LMUN2216LT1G
LMUN2230LT1G
LMUN2231LT1G
LMUN2232LT1G
LMUN2233LT1G
LMUN2234LT1G
LMUN2235LT1G
LMUN2236LT1G
LMUN2237LT1G
LMUN2238LT1G
LMUN2240LT1G
LMUN2241LT1G
Marking
A8A
A8B
A8C
A8D
A8E
A8F
A8G
A8H
A8J
A8K
A8L
A8M
A8N
A8P
A8R
A8T
A8U
R1(K)
10
22
47
10
10
4.7
1.0
2.2
4.7
4.7
22
2.2
100
47
2.2
47
100
R2(K)
10
22
47
47
∞
∞
1.0
2.2
4.7
47
47
47
100
22
∞
∞
∞
1. Device mounted on a FR-4 glass epoxy printed circuit board using the
minimum recommended footprint.
Rev.A 1/7
LESHAN RADIO COMPANY, LTD.
LMUN2211LT1G Series,S-LMUN2211LT1G Series
THERMAL CHARACTERISTICS
Rating
Thermal Resistance – Junction-to-Ambient (Note 1.)
Operating and Storage Temperature Range
Maximum Temperature for Soldering Purposes,
Time in Solder Bath
Symbol
R
θJA
T
J
, T
stg
T
L
Value
508
–55 to +150
260
10
Unit
°C/W
°C
°C
Sec
ELECTRICAL CHARACTERISTICS
(TA = 25°C unless otherwise noted)
Characteristic
Symbol
Min
Typ
Max
Unit
OFF CHARACTERISTICS
Collector-Base Cutoff Current (V
CB
= 50 V, I
E
= 0)
Collector-Emitter Cutoff Current (V
CE
= 50 V, I
B
= 0)
Emitter-Base Cutoff Current
(V
EB
= 6.0 V, I
C
= 0)
LMUN2211LT1G
LMUN2212LT1G
LMUN2213LT1G
LMUN2214LT1G
LMUN2215LT1G
LMUN2216LT1G
LMUN2230LT1G
LMUN2231LT1G
LMUN2232LT1G
LMUN2233LT1G
LMUN2234LT1G
LMUN2235LT1G
LMUN2236LT1G
LMUN2237LT1G
LMUN2238LT1G
LMUN2240LT1G
LMUN2241LT1G
I
CBO
I
CEO
I
EBO
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
50
50
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
100
500
0.5
0.2
0.1
0.2
0.9
1.9
4.3
2.3
1.5
0.18
0.13
0.2
0.05
0.13
4.0
0.2
0.1
–
–
nAdc
nAdc
mAdc
Collector-Base Breakdown Voltage (I
C
= 10
µA,
I
E
= 0)
Collector-Emitter Breakdown Voltage (Note 2.), (I
C
= 2.0 mA, I
B
= 0)
V
(BR)CBO
V
(BR)CEO
Vdc
Vdc
ON CHARACTERISTICS
(Note 2.)
LMUN2211LT1G
LMUN2212LT1G
LMUN2213LT1G
LMUN2214LT1G
LMUN2215LT1G
LMUN2216LT1G
LMUN2230LT1G
LMUN2231LT1G
LMUN2232LT1G
LMUN2233LT1G
LMUN2234LT1G
LMUN2235LT1G
LMUN2236LT1G
LMUN2237LT1G
LMUN2238LT1G
LMUN2240LT1G
LMUN2241LT1G
Collector-Emitter Saturation Voltage (I
C
= 10 mA, I
B
= 0.3 mA)
(I
C
= 10 mA, I
B
= 5 mA) LMUN2230LT1G/LMUN2231LT1G
LMUN2237LT1G
(I
C
= 10 mA, I
B
= 1 mA) LMUN2215LT1G/LMUN2216LT1G
LMUN2232LT1G/LMUN2233LT1G/LMUN2234LT1G/
LMUN2235LT1G/LMUN2238LT1G/LMUN2240LT1G
2. Pulse Test: Pulse Width < 300
µs,
Duty Cycle < 2.0%.
Rev.A 2/7
DC Current Gain
(V
CE
= 10 V, I
C
= 5.0 mA)
h
FE
35
60
80
80
160
160
3.0
8.0
15
80
80
80
80
80
160
160
160
–
60
100
140
140
350
350
5.0
15
30
200
150
140
150
140
350
350
350
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
0.25
V
CE(sat)
Vdc
LESHAN RADIO COMPANY, LTD.
LMUN2211LT1G Series,S-LMUN2211LT1G Series
ELECTRICAL CHARACTERISTICS
(TA = 25°C unless otherwise noted) (Continued)
Characteristic
Symbol
Min
Typ
Max
Unit
ON CHARACTERISTICS
(Note 3.)
Output Voltage (on)
(V
CC
= 5.0 V, V
B
= 2.5 V, R
L
= 1.0 k
Ω
)
V
OL
LMUN2211LT1G
LMUN2212LT1G
LMUN2214LT1G
LMUN2215LT1G
LMUN2216LT1G
LMUN2230LT1G
LMUN2231LT1G
LMUN2232LT1G
LMUN2233LT1G
LMUN2234LT1G
LMUN2235LT1G
LMUN2238LT1G
LMUN2236LT1G
LMUN2237LT1G
LMUN2213LT1G
LMUN2240LT1G
LMUN2241LT1G
V
OH
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
4.9
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
0.2
0.2
0.2
0.2
0.2
0.2
0.2
0.2
0.2
0.2
0.2
0.2
0.2
0.2
0.2
0.2
0.2
–
Vdc
Vdc
(V
CC
= 5.0 V, V
B
= 5.5 V, R
L
= 1.0 k
Ω)
(V
CC
= 5.0 V, V
B
= 4.0 V, R
L
= 1.0 k
Ω)
(V
CC
= 5.0 V, V
B
= 3.5 V, R
L
= 1.0 k
Ω)
(V
CC
= 5.0 V, V
B
= 5.0 V, R
L
= 1.0 k
Ω)
Output Voltage (off) (V
CC
= 5.0 V, V
B
= 0.5 V, R
L
= 1.0 k
Ω)
(V
CC
= 5.0 V, V
B
= 0.050 V, R
L
= 1.0 k
Ω
)
LMUN2230LT1G
LMUN2215LT1G
(V
CC
= 5.0 V, V
B
= 0.25 V, R
L
= 1.0 k
Ω
)
LMUN2216LT1G
LMUN2233LT1G
LMUN2238LT1G
LMUN2236LT1G
LMUN2237LT1G
LMUN2240LT1G
Input Resistor
LMUN2211LT1G
LMUN2212LT1G
LMUN2213LT1G
LMUN2214LT1G
LMUN2215LT1G
LMUN2216LT1G
LMUN2230LT1G
LMUN2231LT1G
LMUN2232LT1G
LMUN2233LT1G
LMUN2234LT1G
LMUN2235LT1G
LMUN2238LT1G
LMUN2241LT1G
LMUN2236LT1G
LMUN2237LT1G
LMUN2240LT1G
LMUN2211LT1/LMUN2212LT1/LMUN2213LT1G
LMUN2214LT1G
LMUN2215LT1/LMUN2216LT1/LMUN2238LT1G
LMUN2241LT1G/LMUN2240LT1G
LMUN2230LT1/LMUN2231LT1/LMUN2232LT1G
LMUN2236LT1G
LMUN2237LT1G
LMUN2233LT1G
LMUN2234LT1G
LMUN2235LT1G
R
1
7.0
15.4
32.9
7.0
7.0
3.3
0.7
1.5
3.3
3.3
15.4
1.54
1.54
70
70
32.9
32.9
0.8
0.17
–
–
0.8
0.8
1.7
0.055
0.38
0.038
10
22
47
10
10
4.7
1.0
2.2
4.7
4.7
22
2.2
2.2
100
100
47
47
1.0
0.21
–
–
1.0
1.0
2.15
0.1
0.47
0.047
13
28.6
61.1
13
13
6.1
1.3
2.9
6.1
6.1
28.6
2.86
2.88
130
130
61.1
61.1
1.2
0.25
–
–
1.2
1.2
2.6
0.185
0.56
0.056
kΩ
Resistor Ratio
R
1
/R
2
3. Pulse Test: Pulse Width < 300
µs,
Duty Cycle < 2.0%.
Rev.A 3/7
LESHAN RADIO COMPANY, LTD.
LMUN2211LT1G Series,S-LMUN2211LT1G Series
TYPICAL ELECTRICAL CHARACTERISTICS
LMUN2212LT1G
1
1000
VCE(sat), MAXIMUM COLLECTOR VOLTAGE (V)
hFE, DC CURRENT GAIN (NORMALIZED)
IC/IB=10
VCE=10V
0.1
100
0.01
0
20
40
60
80
10
0
20
40
60
80
100
120
IC, COLLECTOR CURRENT (mA)
-55℃
25℃
75℃
100℃
125℃
IC, COLLECTOR CURRENT (mA)
-55℃
25℃
75℃
100℃
125℃
Fig. 1 VCE(sat) VS IC
Fig. 2 DC CURRENT GAIN
3.5
f = 1 MHz
IE = 0A
100
Vo=0.2V
3
2.5
Cob, CAPACITANCE (pF)
2
Vin, INPUT VOLTAGE (V)
10
1.5
1
0.5
0
0
10
20
30
40
50
60
1
0
10
-55℃
20
30
40
50
IC, COLLECTOR CURRENT (mA)
-25℃
25℃
75℃
60
125℃
VR, REVERSE BIAS VOLTAGE (V)
Fig. 3 OUTPUT CAPACITANCE
Fig. 4 INPUT VOLTAGE VS OUTPUT CURRENT
Rev.A 4/7
LESHAN RADIO COMPANY, LTD.
LMUN2211LT1G Series,S-LMUN2211LT1G Series
TYPICAL ELECTRICAL CHARACTERISTICS
LMUN2212LT1G
100
Vo=5V
IC, COLLECTOR CURRENT (mA)
10
1
0.1
0.01
0.001
0
1
-55℃
2
3
4
5
Vin, INPUT VOLTAGE (V)
-25℃
25℃
75℃
6
7
125℃
8
Fig. 5 OUTPUT CURRENT VS INPUT VOLTAGE
Rev.A 5/7
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