PST1600A ... PST1600M
PST1600A ... PST1600M
Silicon Rectifier Diodes – Half Bridge
Silizium-Gleichrichterdioden– Halbbrücke
Version 2013-05-07
10.1
±0.3
Ø 3.8
±0.2
4
Type
Typ
Nominal current
Nennstrom
±0.3
16 A
50...1000 V
TO-220AB
1.8 g
2.8
1.2
±0.2
4
±0.7
Repetitive peak reverse voltage
Periodische Spitzensperrspannung
Plastic case
Kunststoffgehäuse
14.9
±0.3
1 2 3
13.9
±0.3
2.67
0.42
±0.2
8.7
±0.3
4.5
±0.2
1.3
±0.1
0.8
±0.2
2.54
±0.1
1 2 3
Weight approx.
Gewicht ca.
Plastic material has UL classification 94V-0
Gehäusematerial UL94V-0 klassifiziert
Standard packaging in tubes
Standard Lieferform in Stangen
±0.1
Dimensions - Maße [mm]
Maximum ratings and Characteristics
Type
Typ
Repetitive peak reverse voltage
Periodische Spitzensperrspannung
V
RRM
[V]
1
)
50
100
200
400
600
800
1000
Surge peak reverse voltage
Stoßspitzensperrspannung
V
RSM
[V]
1
)
50
100
200
400
600
800
1000
T
C
= 100°C
T
C
= 100°C
f > 15 Hz
T
A
= 25°C
T
A
= 25°C
3.9
Grenz- und Kennwerte
Forward voltage
Durchlass-Spannung
V
F
[V]
1
), T
j
= 25°C
I
F
= 5 A
I
F
= 8 A
< 1.1
< 1.1
< 1.1
< 1.1
< 1.1
< 1.1
< 1.1
8 A
1
)
16 A
2
)
30 A
3
)
135/150 A
1
)
90 A
2
s
1
)
-50...+150°C
-50...+175°C
< 1.0
< 1.0
< 1.0
< 1.0
< 1.0
< 1.0
< 1.0
I
FAV
I
FAV
I
FRM
I
FSM
i
2
t
PST1600A
PST1600B
PST1600D
PST1600G
PST1600J
PST1600K
PST1600M
Max. average forward current, R-load
Dauergrenzstrom mit R-Last
Repetitive peak forward current
Periodischer Spitzenstrom
Peak forward surge current, 50/60 Hz half sine-wave
Stoßstrom für eine 50/60 Hz Sinus-Halbwelle
Rating for fusing, t < 10 ms
Grenzlastintegral, t < 10 ms
Junction temperature – Sperrschichttemperatur
Storage temperature – Lagerungstemperatur
T
S
T
j
1
2
3
Per diode – Pro Diode
Output current when operating two devices in a full bridge configuration
Ausgangstrom bei Betrieb zweier Bauteile als Vollbrücke
Max. temperature of the case T
C
= 100°C – Max. Temperatur des Gehäuses T
C
= 100°C
http://www.diotec.com/
© Diotec Semiconductor AG
1
PST1600A ... PST1600M
Characteristics
Leakage current
Sperrstrom
Thermal resistance junction to case
Wärmewiderstand Sperrschicht – Gehäuse
T
j
= 25°C
V
R
= V
RRM
I
R
R
thC
Kennwerte
< 5 µA
< 2.5 K/W
1
)
120
[%]
100
10
[A]
2
10
80
1
T
j
= 125°C
T
j
= 25°C
60
40
10
-1
20
I
FAV
0
0
T
C
50
100
150
[°C]
I
F
10
-2
200a-(5a-0.95v)
0.4
V
F
0.8
1.0
1.2
1.4
[V] 1.8
Rated forward current vs. temp. of the case
Zul. Richtstrom in Abh. v. d. Gehäusetemperatur
Forward characteristics (typical values)
Durchlasskennlinien (typische Werte)
1
Per diode – Pro Diode
http://www.diotec.com/
© Diotec Semiconductor AG
2
Embedded System
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