WED3EG7218S265D3 datasheet, PDF

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WED3EG7218S265D3: DescriptionDDR DRAM Module, 16MX72, 0.75ns, CMOS, DIMM-184; Categorystorage storage; File Size218KB，12 Pages; ManufacturerMicrosemi; Websitehttps://www.microsemi.com

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WED3EG7218S265D3 Overview

DDR DRAM Module, 16MX72, 0.75ns, CMOS, DIMM-184

WED3EG7218S265D3 Parametric

Parameter Name	Attribute value
Is it lead-free?	Contains lead
Is it Rohs certified?	incompatible
Maker	Microsemi
Parts packaging code	DIMM
package instruction	DIMM,
Contacts	184
Reach Compliance Code	compliant
ECCN code	EAR99
access mode	FOUR BANK PAGE BURST
Maximum access time	0.75 ns
Other features	AUTO/SELF REFRESH
JESD-30 code	R-XDMA-N184
memory density	1207959552 bit
Memory IC Type	DDR DRAM MODULE
memory width	72
Number of functions	1
Number of ports	1
Number of terminals	184
word count	16777216 words
character code	16000000
Operating mode	SYNCHRONOUS
Maximum operating temperature	70 °C
Minimum operating temperature
organize	16MX72
Package body material	UNSPECIFIED
encapsulated code	DIMM
Package shape	RECTANGULAR
Package form	MICROELECTRONIC ASSEMBLY
Peak Reflow Temperature (Celsius)	NOT SPECIFIED
Certification status	Not Qualified
self refresh	YES
Maximum supply voltage (Vsup)	2.7 V
Minimum supply voltage (Vsup)	2.3 V
Nominal supply voltage (Vsup)	2.5 V
surface mount	NO
technology	CMOS
Temperature level	COMMERCIAL
Terminal form	NO LEAD
Terminal location	DUAL
Maximum time at peak reflow temperature	NOT SPECIFIED

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White Electronic Designs

WED3EG7218S-D3

-JD3

PRELIMINARY*

128MB – 16Mx72 DDR SDRAM UNBUFFERED

FEATURES

Double-data-rate architecture

DDR200 and DDR266

• JEDEC design speciﬁed

BI-directional data strobes (DQS)

Differential clock inputs (CK & CK#)

Programmable Read Latency 2,2.5 (clock)

Programmable Burst Length (2,4,8)

Programmable Burst type (sequential & interleave)

Edge aligned data output, center aligned data input.

Auto and self refresh

Serial presence detect

Power supply = 2.5V ± 0.25V

JEDEC 184 pin DIMM package

• PCB height: 30.48 (1.20")

NOTE: Consult factory for availability of:

• RoHS Products

• Vendor source control options

• Industrial temperature option

* This product is under development, is not qualiﬁed or characterized and is subject to

change without notice.

DESCRIPTION

The WED3EG7218S is a 16Mx72 Double Data Rate

SDRAM memory module based on 128Mb DDR SDRAM

component. The module consists of nine 16Mx8 DDR

SDRAMs in 66 pin TSOP packages mounted on a 184

pin FR4 substrate.

Synchronous design allows precise cycle control with the

use of system clock. Data I/O transactions are possible on

both edges and Burst Lengths allow the same device to be

useful for a variety of high bandwidth, high performance

memory system applications.

OPERATING FREQUENCIES

DDR266 @CL=2

Clock Speed

CL-t

RCD

-t

133MHz

2-2-2

DDR266 @CL=2.5

133MHz

2.5-3-3

DDR200 @CL=2

100MHz

2-2-2

November 2005

Rev. 1

White Electronic Designs Corporation • (602) 437-1520 • www.wedc.com

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Description	DDR DRAM Module, 16MX72, 0.75ns, CMOS, DIMM-184	DDR DRAM Module, 16MX72, 0.75ns, CMOS, DIMM-184	DDR DRAM Module, 16MX72, 0.75ns, CMOS, DIMM-184	DDR DRAM Module, 16MX72, 0.75ns, CMOS, DIMM-184	DDR DRAM Module, 16MX72, 0.75ns, CMOS, DIMM-184	DDR DRAM Module, 16MX72, 0.75ns, CMOS, DIMM-184
Is it lead-free?	Contains lead	Contains lead	Contains lead	Contains lead	Contains lead	Contains lead
Is it Rohs certified?	incompatible	incompatible	incompatible	incompatible	incompatible	incompatible
Maker	Microsemi	Microsemi	Microsemi	Microsemi	Microsemi	Microsemi
Parts packaging code	DIMM	DIMM	DIMM	DIMM	DIMM	DIMM
package instruction	DIMM,	DIMM,	DIMM,	DIMM,	DIMM,	DIMM,
Contacts	184	184	184	184	184	184
Reach Compliance Code	compliant	compliant	compli	compli	compli	compli
ECCN code	EAR99	EAR99	EAR99	EAR99	EAR99	EAR99
access mode	FOUR BANK PAGE BURST	FOUR BANK PAGE BURST	FOUR BANK PAGE BURST	FOUR BANK PAGE BURST	FOUR BANK PAGE BURST	FOUR BANK PAGE BURST
Maximum access time	0.75 ns	0.75 ns	0.75 ns	0.75 ns	0.75 ns	0.75 ns
Other features	AUTO/SELF REFRESH	AUTO/SELF REFRESH	AUTO/SELF REFRESH	AUTO/SELF REFRESH	AUTO/SELF REFRESH	AUTO/SELF REFRESH
JESD-30 code	R-XDMA-N184	R-XDMA-N184	R-XDMA-N184	R-XDMA-N184	R-XDMA-N184	R-XDMA-N184
memory density	1207959552 bit	1207959552 bit	1207959552 bi	1207959552 bi	1207959552 bi	1207959552 bi
Memory IC Type	DDR DRAM MODULE	DDR DRAM MODULE	DDR DRAM MODULE	DDR DRAM MODULE	DDR DRAM MODULE	DDR DRAM MODULE
memory width	72	72	72	72	72	72
Number of functions	1	1	1	1	1	1
Number of ports	1	1	1	1	1	1
Number of terminals	184	184	184	184	184	184
word count	16777216 words	16777216 words	16777216 words	16777216 words	16777216 words	16777216 words
character code	16000000	16000000	16000000	16000000	16000000	16000000
Operating mode	SYNCHRONOUS	SYNCHRONOUS	SYNCHRONOUS	SYNCHRONOUS	SYNCHRONOUS	SYNCHRONOUS
Maximum operating temperature	70 °C	70 °C	70 °C	70 °C	70 °C	70 °C
organize	16MX72	16MX72	16MX72	16MX72	16MX72	16MX72
Package body material	UNSPECIFIED	UNSPECIFIED	UNSPECIFIED	UNSPECIFIED	UNSPECIFIED	UNSPECIFIED
encapsulated code	DIMM	DIMM	DIMM	DIMM	DIMM	DIMM
Package shape	RECTANGULAR	RECTANGULAR	RECTANGULAR	RECTANGULAR	RECTANGULAR	RECTANGULAR
Package form	MICROELECTRONIC ASSEMBLY	MICROELECTRONIC ASSEMBLY	MICROELECTRONIC ASSEMBLY	MICROELECTRONIC ASSEMBLY	MICROELECTRONIC ASSEMBLY	MICROELECTRONIC ASSEMBLY
Peak Reflow Temperature (Celsius)	NOT SPECIFIED	NOT SPECIFIED	NOT SPECIFIED	NOT SPECIFIED	NOT SPECIFIED	NOT SPECIFIED
Certification status	Not Qualified	Not Qualified	Not Qualified	Not Qualified	Not Qualified	Not Qualified
self refresh	YES	YES	YES	YES	YES	YES
Maximum supply voltage (Vsup)	2.7 V	2.7 V	2.7 V	2.7 V	2.7 V	2.7 V
Minimum supply voltage (Vsup)	2.3 V	2.3 V	2.3 V	2.3 V	2.3 V	2.3 V
Nominal supply voltage (Vsup)	2.5 V	2.5 V	2.5 V	2.5 V	2.5 V	2.5 V
surface mount	NO	NO	NO	NO	NO	NO
technology	CMOS	CMOS	CMOS	CMOS	CMOS	CMOS
Temperature level	COMMERCIAL	COMMERCIAL	COMMERCIAL	COMMERCIAL	COMMERCIAL	COMMERCIAL
Terminal form	NO LEAD	NO LEAD	NO LEAD	NO LEAD	NO LEAD	NO LEAD
Terminal location	DUAL	DUAL	DUAL	DUAL	DUAL	DUAL
Maximum time at peak reflow temperature	NOT SPECIFIED	NOT SPECIFIED	NOT SPECIFIED	NOT SPECIFIED	NOT SPECIFIED	NOT SPECIFIED

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