DMG4511SK4
COMPLEMENTARY PAIR ENHANCEMENT MODE MOSFET
Product Summary
V
(BR)DSS
35V
-35V
R
DS(ON)
35mΩ @ V
GS
= 10V
45mΩ @ V
GS
= -10V
I
D
T
A
= 25°C
13A
-12A
Features and Benefits
•
•
•
•
•
•
•
•
•
Low On-Resistance
Low Gate Threshold Voltage
Low Input Capacitance
Fast Switching Speed
Low Input/Output Leakage
Complementary Pair MOSFET
Lead Free/RoHS Compliant (Note 1)
"Green" Device (Note 2)
Qualified to AEC-Q101 Standards for High Reliability
Description and Applications
This new generation MOSFET has been designed to minimize the on-
state resistance (R
DS(on)
) and yet maintain superior switching
performance, making it ideal for high efficiency power management
applications.
•
•
•
Backlighting
DC-DC Converters
Power management functions
Mechanical Data
•
•
•
•
•
•
Case: TO252-4L
Case Material: Molded Plastic, “Green” Molding Compound. UL
Flammability Classification Rating 94V-0
Moisture Sensitivity: Level 1 per J-STD-020
Terminal Connections: See Diagram Below
Terminals: Finish – Matte Tin annealed over Copper leadframe.
Solderable per MIL-STD-202, Method 208
Weight: 0.328 grams (approximate)
D
2
D
1
G
2
G
1
S
2
S
1
P-Channel MOSFET
Top View
Bottom View
N-Channel MOSFET
Ordering Information
(Note 3)
Part Number
DMG4511SK4-7
Notes:
Case
TO252-4L
Packaging
3000 / Tape & Reel
1. No purposefully added lead.
2. Diodes Inc.'s "Green" policy can be found on our website at http://www.diodes.com.
3. For packaging details, go to our website at http://www.diodes.com.
Marking Information
G4511S
YYWW
= Manufacturer’s Marking
G4511S = Product Type Marking Code
YYWW = Date Code Marking
YY = Year (ex: 09 = 2009)
WW = Week (01 – 53)
DMG4511SK4
Document number: DS32042 Rev. 4 - 2
1 of 9
www.diodes.com
July 2011
© Diodes Incorporated
DMG4511SK4
Maximum Ratings – N-CHANNEL, Q1
@T
A
= 25°C unless otherwise specified
Characteristic
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current (Note 4) V
GS
= 10V
Continuous Drain Current (Note 5) V
GS
= 10V
Continuous Drain Current (Note 5) V
GS
= 10V
Continuous Drain Current (Note 5) V
GS
= 4.5V
Continuous Drain Current (Note 5) V
GS
= 4.5V
Pulsed Drain Current (Note 6)
Steady
State
Steady
State
t
≤
10s
Steady
State
t
≤
10s
T
A
= 25°C
T
A
= 70°C
T
A
= 25°C
T
A
= 70°C
T
A
= 25°C
T
A
= 70°C
T
A
= 25°C
T
A
= 70°C
T
A
= 25°C
T
A
= 70°C
Symbol
V
DSS
V
GSS
I
D
I
D
I
D
I
D
I
D
I
DM
Value
35
±20
5.3
4.2
8.6
6.8
13
11
6.3
5.0
9.3
7.4
50
Unit
V
V
A
A
A
A
A
A
Maximum Ratings – P-CHANNEL, Q2
@T
A
= 25°C unless otherwise specified
Characteristic
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current (Note 4) V
GS
= -10V
Continuous Drain Current (Note 5) V
GS
= -10V
Continuous Drain Current (Note 5) V
GS
= -10V
Continuous Drain Current (Note 5) V
GS
= -4.5V
Continuous Drain Current (Note 5) V
GS
= -4.5V
Pulsed Drain Current (Note 6)
Steady
State
Steady
State
t
≤
10s
Steady
State
t
≤
10s
T
A
= 25°C
T
A
= 70°C
T
A
= 25°C
T
A
= 70°C
T
A
= 25°C
T
A
= 70°C
T
A
= 25°C
T
A
= 70°C
T
A
= 25°C
T
A
= 70°C
Symbol
V
DSS
V
GSS
I
D
I
D
I
D
I
D
I
D
I
DM
Value
-35
±20
-5.0
-3.8
-7.8
-6.2
-12
-10
-6.5
-5.2
-9.6
-7.7
-50
Unit
V
V
A
A
A
A
A
A
Thermal Characteristics
Characteristic
Power Dissipation (Note 4)
Thermal Resistance, Junction to Ambient @T
A
= 25°C (Note 4)
Power Dissipation (Note 5)
Thermal Resistance, Junction to Ambient @T
A
= 25°C (Note 5)
Power Dissipation (Note 5) t
≤
10s
Thermal Resistance, Junction to Ambient @T
A
= 25°C (Note 5) t
≤
10s
Operating and Storage Temperature Range
Notes:
4. Device mounted on FR-4 PCB with minimum recommended pad layout, single sided.
5. Device mounted on 2” x 2” FR-4 PCB with high coverage 2 oz. Copper, single sided.
6. Repetitive rating, pulse width limited by junction temperature.
Symbol
P
D
R
θJA
P
D
R
θJA
P
D
R
θJA
T
J
,
T
STG
Value
1.54
81.3
4.1
30.8
8.9
14
-55 to +150
Unit
W
°C/W
W
°C/W
W
°C/W
°C
DMG4511SK4
Document number: DS32042 Rev. 4 - 2
2 of 9
www.diodes.com
July 2011
© Diodes Incorporated
DMG4511SK4
Electrical Characteristics – N-CHANNEL, Q1
@T
A
= 25°C unless otherwise specified
Characteristic
OFF CHARACTERISTICS (Note 7)
Drain-Source Breakdown Voltage
Zero Gate Voltage Drain Current T
J
= 25°C
Gate-Source Leakage
ON CHARACTERISTICS (Note 7)
Gate Threshold Voltage
Static Drain-Source On-Resistance
Forward Transfer Admittance
Diode Forward Voltage
DYNAMIC CHARACTERISTICS (Note 8)
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Gate Resistance
Total Gate Charge (V
GS
= 10V)
Total Gate Charge (V
GS
= 4.5V)
Gate-Source Charge
Gate-Drain Charge
Turn-On Delay Time
Turn-On Rise Time
Turn-Off Delay Time
Turn-Off Fall Time
Symbol
BV
DSS
I
DSS
I
GSS
V
GS(th)
R
DS (ON)
|Y
fs
|
V
SD
C
iss
C
oss
C
rss
R
g
Q
g
Q
g
Q
gs
Q
gd
t
D(on)
t
r
t
D(off)
t
f
Min
35
-
-
1.0
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
Typ
-
-
-
-
25
50
4.5
-
850
64.7
51.9
1.6
18.7
8.8
2.6
2.1
5.4
2.8
33.2
35.6
Max
-
1.0
±100
3.0
35
65
-
1.2
-
-
-
-
-
-
-
-
-
-
-
-
Unit
V
μA
nA
V
mΩ
S
V
pF
pF
pF
Ω
Test Condition
V
GS
= 0V, I
D
= 250μA
V
DS
= 35V, V
GS
= 0V
V
GS
= ±20V, V
DS
= 0V
V
DS
= V
GS
, I
D
= 250μA
V
GS
= 10V, I
D
= 8A
V
GS
= 4.5V, I
D
= 6A
V
DS
= 10V, I
D
= 8A
V
GS
= 0V, I
S
= 8A
V
DS
= 25V, V
GS
= 0V,
f = 1.0MHz
V
DS
= 0V, V
GS
= 0V, f = 1MHz
V
GS
= 10V, V
DS
= 28V, I
D
= 8A
V
GS
= 4.5V, V
DS
= 28V,
I
D
= 8A
V
DS
= 18V, V
GS
= 10V,
R
L
= 18Ω, R
G
= 3.3Ω,
I
D
= 1A
nC
ns
ns
ns
ns
Electrical Characteristics – P-CHANNEL, Q2
@T
A
= 25°C unless otherwise specified
Characteristic
OFF CHARACTERISTICS (Note 7)
Drain-Source Breakdown Voltage
Zero Gate Voltage Drain Current T
J
= 25°C
Gate-Source Leakage
ON CHARACTERISTICS (Note 7)
Gate Threshold Voltage
Static Drain-Source On-Resistance
Forward Transfer Admittance
Diode Forward Voltage
DYNAMIC CHARACTERISTICS (Note 8)
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Gate Resistance
Total Gate Charge (V
GS
= -10V)
Total Gate Charge (V
GS
= -4.5V)
Gate-Source Charge
Gate-Drain Charge
Turn-On Delay Time
Turn-On Rise Time
Turn-Off Delay Time
Turn-Off Fall Time
Notes:
Symbol
BV
DSS
I
DSS
I
GSS
V
GS(th)
R
DS (ON)
|Y
fs
|
V
SD
C
iss
C
oss
C
rss
R
g
Q
g
Q
g
Q
gs
Q
gd
t
D(on)
t
r
t
D(off)
t
f
Min
-35
-
-
-1.0
-
-
Typ
-
-
-
-
30
40
8
-
985.2
90.6
75.3
7.0
19.2
9.5
2.0
3.5
5.2
4.8
45.8
29.5
Max
-
-1.0
±100
-3.0
45
65
-
-1.2
-
-
-
-
-
-
-
-
-
-
-
-
Unit
V
μA
nA
V
mΩ
S
V
pF
pF
pF
Ω
Test Condition
V
GS
= 0V, I
D
= -250μA
V
DS
= -35V, V
GS
= 0V
V
GS
= ±20V, V
DS
= 0V
V
DS
= V
GS
, I
D
= -250μA
V
GS
= -10V, I
D
= -6A
V
GS
= -4.5V, I
D
= -4A
V
DS
= -10V, I
D
= -6A
V
GS
= 0V, I
S
= -6A
V
DS
= -25V, V
GS
= 0V,
f = 1.0MHz
V
DS
= 0V, V
GS
= 0V, f = 1MHz
V
GS
= -10V, V
DS
= -28V, I
D
= -6A
V
GS
= -4.5V, V
DS
= -28V,
I
D
= -6A
V
DS
= -18V, V
GS
= -10V,
R
L
= 18Ω, R
G
= 3.3Ω,
I
D
= -1A
-
-
-
-
-
-
-
-
-
-
-
-
nC
ns
ns
ns
ns
7. Short duration pulse test used to minimize self-heating effect.
8. Guaranteed by design. Not subject to production testing.
DMG4511SK4
Document number: DS32042 Rev. 4 - 2
3 of 9
www.diodes.com
July 2011
© Diodes Incorporated
DMG4511SK4
N-CHANNEL, Q1
30
V
GS
= 8.0V
30
25
I
D
, DRAIN CURRENT (A)
25
I
D
, DRAIN CURRENT (A)
V
DS
= 5V
V
GS
= 4.5V
20
V
GS
= 4.0V
20
15
V
GS
= 3.5V
15
10
V
GS
= 3.2V
10
T
A
= 150°C
T
A
= 125°C
5
V
GS
= 3.0V
V
GS
= 2.8V
5
T
A
= 85°C
T
A
= 25°C
T
A
= -55°C
0
0
0.5
1
1.5
V
DS
, DRAIN-SOURCE VOLTAGE (V)
Fig. 1 Typical Output Characteristic
2
0
0
1
2
3
4
V
GS
, GATE-SOURCE VOLTAGE (V)
Fig. 2 Typical Transfer Characteristic
5
R
DS(ON)
, DRAIN-SOURCE ON-RESISTANCE (
Ω
)
R
DS(ON)
, DRAIN-SOURCE ON-RESISTANCE (
Ω
)
0.05
0.08
0.07
0.06
0.05
T
A
= 125°C
V
GS
= 4.5V
0.04
T
A
= 150°C
0.03
V
GS
= 4.5V
V
GS
= 8.0V
0.04
0.03
0.02
0.01
0
T
A
= 85°C
T
A
= 25°C
0.02
T
A
= -55°C
0.01
0
0
5
10
15
20
25
I
D
, DRAIN-SOURCE CURRENT (A)
Fig. 3 Typical On-Resistance
vs. Drain Current and Gate Voltage
30
0
5
10
15
20
25
I
D
, DRAIN CURRENT (A)
Fig. 4 Typical On-Resistance
vs. Drain Current and Temperature
30
R
DSON
, DRAIN-SOURCE
ON-RESISTANCE (NORMALIZED)
1.5
V
GS
= 10V
I
D
= 10A
R
DSON
, DRAIN-SOURCE ON-RESISTANCE (
Ω
)
1.7
0.06
0.05
1.3
V
GS
= 4.5V
I
D
= 5A
0.04
V
GS
= 4.5V
I
D
= 5A
1.1
0.03
0.9
0.02
V
GS
= 10V
I
D
= 10A
0.7
0.01
0.5
-50
-25
0
25
50
75 100 125 150
T
A
, AMBIENT TEMPERATURE (°C)
Fig. 5 On-Resistance Variation with Temperature
0
-50
-25
0
25
50
75 100 125 150
T
A
, AMBIENT TEMPERATURE (°C)
Fig. 6 On-Resistance Variation with Temperature
DMG4511SK4
Document number: DS32042 Rev. 4 - 2
4 of 9
www.diodes.com
July 2011
© Diodes Incorporated
DMG4511SK4
3.0
V
GS(TH)
, GATE THRESHOLD VOLTAGE (V)
2.7
2.4
I
S
, SOURCE CURRENT (A)
20
18
16
14
12
10
8
6
4
2
0
0.2
0.4
0.6
0.8
1.0
V
SD
, SOURCE-DRAIN VOLTAGE (V)
Fig. 8 Diode Forward Voltage vs. Current
1.2
T
A
= 25°C
2.1
1.8
1.5
1.2
0.9
0.6
0.3
0
-50 -25
0
25
50
75 100 125 150
T
A
, AMBIENT TEMPERATURE (°C)
Fig. 7 Gate Threshold Variation vs. Ambient Temperature
1,400
1,200
f = 1MHz
I
D
= 250µA
10,000
I
DSS
, LEAKAGE CURRENT (nA)
1,000
T
A
= 150°C
C, CAPACITANCE (pF)
1,000
800
600
400
200
0
0
C
iss
T
A
= 125°C
100
T
A
= 85°C
10
T
A
= 25°C
C
oss
C
rss
1
35
5
10
15
20
25
30
V
DS
, DRAIN-SOURCE VOLTAGE (V)
Fig. 9 Typical Total Capacitance
5
10
15
20
25
30
V
DS
, DRAIN-SOURCE VOLTAGE (V)
Fig. 10 Typical Leakage Current
vs. Drain-Source Voltage
35
1
r(t), TRANSIENT THERMAL RESISTANCE
D = 0.7
D = 0.5
D = 0.3
0.1
D = 0.1
D = 0.05
D = 0.9
R
θJA
(t) = r(t) * R
θ
JA
R
θ
JA
= 80°C/W
P(pk)
D = 0.02
0.01
D = 0.01
D = 0.005
t
1
D = Single Pulse
t
2
T
J
- T
A
= P * R
θ
JA
(t)
Duty Cycle, D = t
1
/t
2
0.001
0.00001
0.0001
0.001
0.01
0.1
1
t
1
, PULSE DURATION TIME (s)
Fig. 11 Transient Thermal Response
10
100
1,000
DMG4511SK4
Document number: DS32042 Rev. 4 - 2
5 of 9
www.diodes.com
July 2011
© Diodes Incorporated
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