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HY125N10T

Description
100V / 125A N-Channel Enhancement Mode MOSFET
CategoryDiscrete semiconductor    The transistor   
File Size210KB,4 Pages
ManufacturerHY Electronic
Websitehttp://www.hygroup.com.tw
Download Datasheet Parametric View All

HY125N10T Overview

100V / 125A N-Channel Enhancement Mode MOSFET

HY125N10T Parametric

Parameter NameAttribute value
MakerHY Electronic
package instructionFLANGE MOUNT, R-PSFM-T3
Reach Compliance Codeunknown
Avalanche Energy Efficiency Rating (Eas)1250 mJ
ConfigurationSINGLE WITH BUILT-IN DIODE
Minimum drain-source breakdown voltage100 V
Maximum drain current (ID)120 A
Maximum drain-source on-resistance0.0058 Ω
FET technologyMETAL-OXIDE SEMICONDUCTOR
JEDEC-95 codeTO-220AB
JESD-30 codeR-PSFM-T3
Number of components1
Number of terminals3
Operating modeENHANCEMENT MODE
Package body materialPLASTIC/EPOXY
Package shapeRECTANGULAR
Package formFLANGE MOUNT
Polarity/channel typeN-CHANNEL
Maximum pulsed drain current (IDM)480 A
surface mountNO
Terminal formTHROUGH-HOLE
Terminal locationSINGLE
transistor applicationsSWITCHING
Transistor component materialsSILICON
FIG.
SINGLE
4
TEMPERATURE (℃)
FORWARD
10
AMBIENT
75
CURRENT
125
1 25
T
1 –
50
PHASE HALF WAVE 60Hz
DERATING CURVE
100 20
150 100
175
FIG.
SINGLE
– MAXIMUM NON-
1
2
5
0.00
2
0.2 0.4 0.6
10
HY125N10T
100V / 125A
N-Channel Enhancement Mode MOSFET
Features
• Low On-State Resistance
• Excellent Gate Charge x R
DS(ON)
Product ( FOM )
• Fully Characterized Avalanche Voltage and Current
• Specially Desigened for DC-DC Converter, Off-line UPS,
Automotive System, Solenoid and Motor Control
• In compliance with EU RoHs 2002/95/EC Directives
100V, R
DS(ON)
=5.8mW@V
GS
=10V, I
D
=40A
TO-220AB
2
Drain
Mechanical Information
• Case: TO-220AB Molded Plastic
• Terminals : Solderable per MIL-STD-750,Method 2026
3
2
1
Gate
3
Source
Marking & Ordering Information
TYPE
HY125N10T
1
MARKING
125N10T
PACKAGE
TO-220AB
PACKING
50PCS/TUBE
Absolute Maximum Ratings (T
C
=25°C unless otherwise specified )
Parameter
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current
1)
Pulsed Drain Current
1)
Maximum Power Dissipation
Derating Factor
Avalanche Energy with Single Pulse, L=0.3mH
Operating Junction and Storage Temperature Range
Note : 1. Maximum DC current limited by the package
T
C
=25℃
T
C
=25℃
Symbol
V
DS
V
GS
I
D
I
DM
P
D
E
AS
T
J,
T
STG
Value
100
+20
120
480
192
1.28
1250
-55 to +175
Units
V
V
A
A
W
mJ
Thermal Characteristics
Parameter
Junction-to-Case Thermal Resistance
Junction-to-Ambient Thermal Resistance
Symbol
R
qJC
R
qJA
Value
0.78
62.5
Units
℃/W
℃/W
COMPANY RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN、FUNCTIONS AND RELIABILITY WITHOUT NOTICE
REV.1, 8-May-2012
PAGE.1
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