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HY18N50W

Description
500V / 18A N-Channel Enhancement Mode MOSFET
CategoryDiscrete semiconductor    The transistor   
File Size285KB,4 Pages
ManufacturerHY Electronic
Websitehttp://www.hygroup.com.tw
Download Datasheet Parametric View All

HY18N50W Overview

500V / 18A N-Channel Enhancement Mode MOSFET

HY18N50W Parametric

Parameter NameAttribute value
MakerHY Electronic
package instructionFLANGE MOUNT, R-PSFM-T3
Reach Compliance Codeunknow
Avalanche Energy Efficiency Rating (Eas)1050 mJ
ConfigurationSINGLE WITH BUILT-IN DIODE
Minimum drain-source breakdown voltage500 V
Maximum drain current (ID)18 A
Maximum drain-source on-resistance0.32 Ω
FET technologyMETAL-OXIDE SEMICONDUCTOR
JESD-30 codeR-PSFM-T3
Number of components1
Number of terminals3
Operating modeENHANCEMENT MODE
Package body materialPLASTIC/EPOXY
Package shapeRECTANGULAR
Package formFLANGE MOUNT
Polarity/channel typeN-CHANNEL
Maximum pulsed drain current (IDM)72 A
surface mountNO
Terminal formTHROUGH-HOLE
Terminal locationSINGLE
transistor applicationsSWITCHING
Transistor component materialsSILICON
FIG.
SINGLE
4
TEMPERATURE (℃)
FORWARD
10
AMBIENT
75
CURRENT
125
1 25
T
1 –
50
PHASE HALF WAVE 60Hz
DERATING CURVE
100 20
150 100
175
FIG.
SINGLE
– MAXIMUM NON-
1
2
5
0.00
2
0.2 0.4 0.6
10
HY18N50W
500V / 18A
N-Channel Enhancement Mode MOSFET
Features
• Low On-State Resistance
• Fast Switching
• Low Gate Charge & Low C
RSS
• Fully Characterized Avalanche Voltage and Current
• Specially Desigened for AC Adapter, Battery Charger and SMPS
• In compliance with EU RoHs 2002/95/EC Directives
500V, R
DS(ON)
=0.32W@V
GS
=10V, I
D
=9A
TO-3PN
2
Drain
Mechanical Information
• Case: TO-3PN Molded Plastic
• Terminals : Solderable per MIL-STD-750,Method 2026
1
1
2
3
Gate
3
Source
Marking & Ordering Information
TYPE
HY18N50W
MARKING
18N50W
PACKAGE
TO-3PN
PACKING
30PCS/TUBE
Absolute Maximum Ratings (T
C
=25°C unless otherwise specified )
Parameter
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current
Pulsed Drain Current
1)
Maximum Power Dissipation
Derating Factor
Avalanche Energy with Single Pulse
L=30mH, I
AS
=8.6A, V
DS
=140V
Operating Junction and Storage Temperature Range
Note : 1. Maximum DC current limited by the package
T
C
=25℃
T
C
=25℃
Symbol
V
DS
V
GS
I
D
I
DM
P
D
E
AS
T
J,
T
STG
Value
500
+30
18
72
200
1.6
1050
-55 to +150
Units
V
V
A
A
W
mJ
Thermal Characteristics
Parameter
Junction-to-Case Thermal Resistance
Junction-to-Ambient Thermal Resistance
Symbol
R
qJC
R
qJA
Value
0.62
40
Units
℃/W
℃/W
COMPANY RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN、FUNCTIONS AND RELIABILITY WITHOUT NOTICE
REV. 1, 11-Jan-2012
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