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HY2N60D

Description
600V / 2.0A N-Channel Enhancement Mode MOSFET
File Size188KB,4 Pages
ManufacturerHY Electronic
Websitehttp://www.hygroup.com.tw
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HY2N60D Overview

600V / 2.0A N-Channel Enhancement Mode MOSFET

HY2N60D / HY2N60M
600V / 2.0A
N-Channel Enhancement Mode MOSFET
Features
• Low ON Resistance
Fast Switching
Low Gate Charge & Low C
RSS
Fully Characterized Avalanche Voltage and Current
Specially Desigened for AC Adapter, PFC and SMPS
In compliance with EU RoHs 2002/95/EC Directives
600V, R
DS(ON)
=4.6Ω@V
GS
=10V, I
D
=1.0A
G
1
2
D
3
S
1
G
2
D S
3
Mechanical Information
• Case: TO-252 / ITO-251 Molded Plastic
• Terminals : Solderable per MIL-STD-750,Method 2026
TO-252
TO-251
2
Drain
Marking & Ordering Information
TYPE
HY2N60D
HY2N60M
MARKING
2N60D
2N60M
PACKAGE
TO-252
TO-251
PACKING
2500PCS/REEL
80PCS/TUBE
1
Gate
Gate
3
Source
Absolute Maximum Ratings (T
C
=25
O
C unless otherwise noted )
P a ra me te r
D r a i n- S o urc e Vo lta g e
Ga te -S o ur c e Vo lta g e
C o nti nuo us D ra i n C urr e nt
P uls e d D ra i n C urr e nt
1 )
Ma xi mum P o we r D i s s i p a ti o n
D e ra ti ng F a c to r
Avalanche Energy with Single Pulse
I
AS
=2A, VDD=50V, L=55mΗ
Op e r a ti ng J unc ti o n a nd S to r a g e Te mp e ra ture Ra ng e
T
C
= 2 5
O
C
T
C
= 2 5
O
C
S ymb o l
V
DS
V
GS
I
D
I
D M
P
D
E
AS
T
J
,T
S TG
HY2 N6 0 D
600
+3 0
2
8
4 3 .8
0 .3 5
11 0
HY2 N6 0 M
Uni ts
V
V
2
8
43
0 .3 5
A
A
W
mJ
O
- 5 5 to +1 5 0
C
Note :
1. Maximum DC current limited by the package
Thermal Characteristics
PA RA M E TE R
Junction-to-Case Thermal Resistance
Junction-to Ambient Thermal Resistance
S ym b o l
R
θ
JC
R
θ
JA
HY2 N6 0 D
2 .8 5
50
HY2 N6 0 M
2 .9
11 0
Uni ts
O
C /W
C /W
O
COMPANY RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN,FUNCTIONS AND RELIABILITY WITHOUT NOTICE
REV1.0 : AUG. 2011
PAGE . 1

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Description 600V / 2.0A N-Channel Enhancement Mode MOSFET 600V / 2.0A N-Channel Enhancement Mode MOSFET
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