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HY4N65D

Description
650V / 4A N-Channel Enhancement Mode MOSFET
File Size138KB,4 Pages
ManufacturerHY Electronic
Websitehttp://www.hygroup.com.tw
Download Datasheet View All

HY4N65D Overview

650V / 4A N-Channel Enhancement Mode MOSFET

FIG.
SINGLE
4
TEMPERATURE (℃)
FORWARD
10
AMBIENT
75
CURRENT
125
1 25
T
1 –
50
PHASE HALF WAVE 60Hz
DERATING CURVE
100 20
150 100
175
FIG.
SINGLE
– MAXIMUM NON-
1
2
5
0.00
2
0.2 0.4 0.6
10
HY4N65D / HY4N65M
650V / 4A
N-Channel Enhancement Mode MOSFET
Features
• Low On-State Resistance
• Fast Switching
• Low Gate Charge & Low C
RSS
• Fully Characterized Avalanche Voltage and Current
• Specially Desigened for AC Adapter, Battery Charger and SMPS
• In compliance with EU RoHs 2002/95/EC Directives
650V, R
DS(ON)
=2.8W@V
GS
=10V, I
D
=2A
TO-252
TO-251
1 2
G D3
S
Mechanical Information
• Case: TO-252 / TO-251 Molded Plastic
• Terminals : Solderable per MIL-STD-750,Method 2026
2
1
G 2 3
D
S
Drain
Marking & Ordering Information
TYPE
HY4N65D
HY4N65M
1
MARKING
4N65D
4N65M
PACKAGE
TO-252
TO-251
PACKING
Gate
2500PCS/REEL
80PCS/TUBE
3
Source
Absolute Maximum Ratings (T
C
=25°C unless otherwise specified )
Parameter
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current
Pulsed Drain Current
1)
Maximum Power Dissipation
Derating Factor
Avalanche Energy with Single Pulse
I
AS
=4A, V
DD
=150V, L=22.5mH
Operating Junction and Storage Temperature Range
T
C
=25℃
T
C
=25℃
Symbol
V
DS
V
GS
I
D
I
DM
P
D
E
AS
T
J,
T
STG
HY4N65D
650
+30
4
16
56.8
0.46
180
HY4N65M
Units
V
V
4
16
48
0.39
A
A
W
mJ
-55 to +150
Note : 1. Maximum DC current limited by the package
Thermal Characteristics
Parameter
Junction-to-Case Thermal Resistance
Junction-to-Case Thermal Resistance
Symbol
R
qJC
R
qJA
HY4N65D
2.2
50
HY4N65M
2.6
110
Units
℃/W
℃/W
COMPANY RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN、FUNCTIONS AND RELIABILITY WITHOUT NOTICE
REV 1.0, 20-Sept-2012
PAGE.1
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