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HY6N60T

Description
600V / 6.0A N-Channel Enhancement Mode MOSFET
File Size110KB,4 Pages
ManufacturerHY Electronic
Websitehttp://www.hygroup.com.tw
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HY6N60T Overview

600V / 6.0A N-Channel Enhancement Mode MOSFET

HY6N60T / HY6N60FT
600V / 6.0A
N-Channel Enhancement Mode MOSFET
Features
• Low ON Resistance
Fast Switching
Low Gate Charge & Low C
RSS
Fully Characterized Avalanche Voltage and Current
Specially Desigened for AC Adapter, Battery Charger and SMPS
In compliance with EU RoHs 2002/95/EC Directives
600V, R
DS(ON)
=1.8Ω@V
GS
=10V, I
D
=3.0A
1
G 23
D
S
1
G 23
D
S
Mechanical Information
• Case: TO-220AB / ITO-220AB Molded Plastic
• Terminals : Solderable per MIL-STD-750,Method 2026
TO-220AB
ITO-220AB
2
Drain
Marking & Ordering Information
TYPE
HY6N60T
HY6N60FT
MARKING
6N60T
6N60FT
PACKAGE
TO-220AB
ITO-220AB
PACKING
50PCS/TUBE
50PCS/TUBE
1
Gate
Gate
3
Source
Absolute Maximum Ratings (T
C
=25
O
C unless otherwise noted )
P a ra m e te r
D ra i n-S o urc e Vo lta g e
Ga te -S o urc e Vo lta g e
C o nti nuo us D ra i n C urr e nt
P uls e d D r a i n C urre nt
1 )
Ma xi mum P o we r D i s s i p a ti o n
D e ra ti ng F a c to r
Avalanche Energy with Single Pulse
I
AS
=6A, VDD=90V, L=18mΗ
Op e r a ti ng J unc ti o n a nd S to ra g e Te mp e ra ture Ra ng e
T
C
=2 5
O
C
T
C
=2 5
O
C
S ym b o l
V
DS
V
GS
I
D
I
D M
P
D
E
AS
T
J
,T
S TG
HY6 N6 0 T
HY6 N6 0 F T
600
+3 0
Uni ts
V
V
6
24
86
0 .6 9
324
- 5 5 to +1 5 0
6
24
3 6 .8
0 .2 9
A
A
W
mJ
O
C
Note :
1. Maximum DC current limited by the package
Thermal Characteristics
PA RA M E TE R
Junction-to-Case Thermal Resistance
Junction-to Ambient Thermal Resistance
S ym b o l
R
θ
JC
R
θ
JA
HY6 N6 0 T
1 .4 5
6 2 .5
HY6 N6 0 F T
3 .4
100
Uni ts
O
C /W
C /W
O
COMPANY RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN,FUNCTIONS AND RELIABILITY WITHOUT NOTICE
REV1.0 : AUG. 2011
PAGE . 1

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HY6N60T HY6N60FT
Description 600V / 6.0A N-Channel Enhancement Mode MOSFET 600V / 6.0A N-Channel Enhancement Mode MOSFET
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