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2SB1218G-S

Description
100mA, 45V, PNP, Si, SMALL SIGNAL TRANSISTOR, ROHS COMPLIANT, SMINI3-F2, 3 PIN
CategoryDiscrete semiconductor    The transistor   
File Size297KB,5 Pages
ManufacturerPanasonic
Websitehttp://www.panasonic.co.jp/semicon/e-index.html
Environmental Compliance
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2SB1218G-S Overview

100mA, 45V, PNP, Si, SMALL SIGNAL TRANSISTOR, ROHS COMPLIANT, SMINI3-F2, 3 PIN

2SB1218G-S Parametric

Parameter NameAttribute value
Is it Rohs certified?conform to
package instructionSMALL OUTLINE, R-PDSO-F3
Contacts3
Reach Compliance Codeunknow
Maximum collector current (IC)0.1 A
Collector-emitter maximum voltage45 V
ConfigurationSINGLE
Minimum DC current gain (hFE)290
JESD-30 codeR-PDSO-F3
Number of components1
Number of terminals3
Package body materialPLASTIC/EPOXY
Package shapeRECTANGULAR
Package formSMALL OUTLINE
Peak Reflow Temperature (Celsius)NOT SPECIFIED
Polarity/channel typePNP
Certification statusNot Qualified
surface mountYES
Terminal formFLAT
Terminal locationDUAL
Maximum time at peak reflow temperatureNOT SPECIFIED
transistor applicationsAMPLIFIER
Transistor component materialsSILICON
Nominal transition frequency (fT)80 MHz
Base Number Matches1
This product complies with the RoHS Directive (EU 2002/95/EC).
Transistors
2SB1218G
Silicon PNP epitaxial planar type
For general amplification
Complementary to 2SD1819G
Features
Package
Absolute Maximum Ratings
T
a
=
25°C
Parameter
Symbol
V
CBO
V
CEO
V
EBO
I
C
I
CP
P
C
T
j
Collector-base voltage (Emitter open)
Collector-emitter voltage (Base open)
Emitter-base voltage (Collector open)
Collector current
Peak collector current
Collector power dissipation
Junction temperature
Storage temperature
Electrical Characteristics
T
a
=
25°C
±
3°C
Parameter
Symbol
V
CBO
V
CEO
V
EBO
I
CBO
I
CEO
h
FE
f
T
Collector-base voltage (Emitter open)
Collector-emitter voltage (Base open)
Emitter-base voltage (Collector open)
e/
Di
Collector-base cutoff current (Emitter open)
na
nc
Collector-emitter cutoff current (Base open)
Forward current transfer ratio
*
te
Collector-emitter saturation voltage
Transition frequency
Collector output capacitance
(Common base, input open circuited)
Note) 1. Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7030 measuring methods for transistors.
2. *: Rank classification
Rank
h
FE
Marking symbol
Q
160 to 260
BQ
R
210 to 340
BR
S
290 to 460
BS
No-rank
160 to 460
B
Product of no-rank is not classified and have no marking symbol for rank.
Publication date: April 2007
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Rating
−45
−45
−7
Unit
V
V
V
−100
−200
150
150
mA
mA
°C
mW
°C
T
stg
−55
to
+150
Conditions
Min
−45
−7
−45
Typ
Max
Unit
V
I
C
= −10 µA,
I
E
=
0
I
C
= −2
mA, I
B
=
0
I
E
= −10 µA,
I
C
=
0
V
V
V
CB
= −20
V, I
E
=
0
V
CE
= −10
V, I
B
=
0
0.1
−100
460
µA
V
µA
V
CE
= −10
V, I
C
= −2
mA
160
V
CE(sat)
C
ob
I
C
= −100
mA, I
B
= −10
mA
0.3
80
2.7
0.5
V
CB
= −10
V, I
E
=
1 mA, f
=
200 MHz
V
CB
= −10
V, I
E
=
0, f
=
1 MHz
MHz
pF
SJC00352AED
M
ain
M
Di ain
sc te
on na
tin nc
ue e/
d
High forward current transfer ratio h
FE
S-Mini type package, allowing downsizing of the equipment and
automatic insertion through the tape packing and the magazine
packing.
Code
SMini3-F2
Marking Symbol: B
Pin Name
1. Base
2. Emitter
3. Collector
sc
on
1

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