DB5H411K
Silicon epitaxial planar type
For high frequency amplification
DB2J411 in WSMini5 type package
Features
Low forward voltage V
F
and small reverse current I
R
Short reverse recovery time t
rr
Halogen-free / RoHS compliant
(EU RoHS / UL-94 V-0 / MSL: Level 1 compliant)
Unit: mm
Marking Symbol: 3F
Basic Part Number
Dual DB2J411 (Parallel)
Packaging
DB5H411K0L Embossed type (Thermo-compression sealing): 3 000 pcs / reel (standard)
Absolute Maximum Ratings
T
a
= 25°C
Parameter
Reverse voltage
Forward current (Average)
Non-repetitive peak forward
surge current
*1
Junction temperature
Storage temperature
Single
Double
Single
Double
Symbol
V
R
I
F(AV)
I
FSM
T
j
T
stg
Rating
40
1
0.75
3
2.25
125
–55 to +125
Unit
V
A
A
A
A
°C
°C
1: Anode-1
2: N.C.
3: Anode-2
Panasonic
JEITA
Code
5
4: Cathode-2
5: Cathode-1
WSMini5-F1-B
SC-113CA
4
1
2
3
Note) *1: 50 Hz sine wave 1 cycle (Non-repetitive peak current)
Electrical Characteristics
T
a
= 25°C±3°C
Parameter
Forward voltage
Reverse current
Terminal capacitance
Reverse recovery time
*1
Symbol
V
F
I
R
C
t
t
rr
I
F
= 1 A
V
R
= 40 V
V
R
= 10 V, f = 1 MHz
I
F
= I
R
= 100 mA, I
rr
= 10 mA
Conditions
Min
Typ
0.50
15
21
6.8
Max
0.58
100
Unit
V
µA
pF
ns
Note) 1. Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7031 measuring methods for diodes.
2. This product is sensitive to electric shock (static electricity, etc.). Due attention must be paid on the charge of a human body and the leakage
of current from the operating equipment.
3. *1: t
rr
measurement circuit
Bias Application Unit (N-50BU)
t
r
10%
Input Pulse
t
p
t
I
F
Output Pulse
t
rr
t
I
rr
= 10 mA
A
V
R
Wave Form Analyzer
(SAS-8130)
R
i
= 50
Ω
Ver. BED
90%
t
p
= 2
µs
t
r
= 0.35 ns
δ
= 0.05
I
F
= 100 mA
I
R
= 100 mA
Pulse Generator
(PG-10N)
R
s
= 50
Ω
Publication date: January 2013
1
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semiconductors described in this book
(1)
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Consult our sales staff in advance for information on the following applications:
–
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