Fast Recovery
Epitaxial Diode (FRED)
DSEI 12
I
FAVM
= 11 A
V
RRM
= 1200 V
t
rr
= 50 ns
V
RSM
V
1200
V
RRM
V
1200
Type
A
C
TO-220 AC
C
A
DSEI 12-12A
A = Anode, C = Cathode
C
Symbol
I
FRMS
I
FAVM
ÿÿ
x
I
FRM
I
FSM
Test Conditions
T
VJ
= T
VJM
T
C
= 100°C; rectangular, d = 0.5
t
P
< 10
ms;
rep. rating, pulse width limited by T
VJM
T
VJ
= 45°C;
t = 10 ms (50 Hz), sine
t = 8.3 ms (60 Hz), sine
Maximum Ratings
25
11
150
75
80
65
70
28
27
21
20
-40...+150
150
-40...+150
A
A
A
A
A
A
A
As
A
2
s
A
2
s
A
2
s
°C
°C
°C
W
Nm
g
2
Features
q
q
q
q
q
T
VJ
= 150°C; t = 10 ms (50 Hz), sine
t = 8.3 ms (60 Hz), sine
It
2
q
q
International standard package
JEDEC TO-220 AC
Planar passivated chips
Very short recovery time
Extremely low switching losses
Low I
RM
-values
Soft recovery behaviour
Epoxy meets UL 94V-0
T
VJ
= 45°C
t = 10 ms (50 Hz), sine
t = 8.3 ms (60 Hz), sine
T
VJ
= 150°C; t = 10 ms (50 Hz), sine
t = 8.3 ms (60 Hz), sine
T
VJ
T
VJM
T
stg
P
tot
M
d
Weight
T
C
= 25°C
Mounting torque
Applications
q
q
q
q
78
0.4...0.6
2
q
q
q
Symbol
Test Conditions
Characteristic Values
typ.
max.
250
150
4
2.2
2.6
1.65
46.2
1.6
0.5
60
mA
mA
mA
V
V
V
mW
K/W
K/W
K/W
ns
A
q
Antiparallel diode for high frequency
switching devices
Anti saturation diode
Snubber diode
Free wheeling diode in converters
and motor control circuits
Rectifiers in switch mode power
supplies (SMPS)
Inductive heating and melting
Uninterruptible power supplies (UPS)
Ultrasonic cleaners and welders
I
R
T
VJ
= 25°C
T
VJ
= 25°C
T
VJ
= 125°C
I
F
= 12 A;
V
R
= V
RRM
V
R
= 0.8 • V
RRM
V
R
= 0.8 • V
RRM
T
VJ
= 150°C
T
VJ
= 25°C
Advantages
q
q
V
F
V
T0
r
T
R
thJC
R
thCK
R
thJA
t
rr
I
RM
q
q
q
For power-loss calculations only
T
VJ
= T
VJM
High reliability circuit operation
Low voltage peaks for reduced
protection circuits
Low noise switching
Low losses
Operating at lower temperature or
space saving by reduced cooling
I
F
= 1 A; -di/dt = 50 A/ms; V
R
= 30 V; T
VJ
= 25°C
V
R
= 540 V; I
F
= 12 A; -di
F
/dt = 100 A/ms
L
£
0.05
mH;
T
VJ
= 100°C
50
6.5
70
7.2
© 2000 IXYS All rights reserved
1-2
033
x
I
FAVM
rating includes reverse blocking losses at T
VJM
, V
R
= 0.8 V
RRM
, duty cycle d = 0.5
Data according to IEC 60747
IXYS reserves the right to change limits, test conditions and dimensions
DSEI 12, 1200 V
30
A
25
20
15
10
5
0
0
1
V
F
2
3
V
4
T
VJ
=25°C
T
VJ
=100°C
T
VJ
=150°C
3.0
µC
2.5
2.0
1.5
1.0
max.
0.5
0.0
1
10
-di
F
/dt
100 A/µs 1000
typ.
T
VJ
=100°C
V
R
= 540V
I
RM
30
T
VJ
=100°C
A V =540V
R
25
max.
20
15
10
5
0
0
100
200
-di
F
/dt
I
F
Q
r
I
F
=11A
I
F
=22A
I
F
=11A
I
F
=5.5A
I
F
=11A
I
F
=22A
I
F
=11A
I
F
=5.5A
typ.
300
A/µs
400
Fig. 1 Forward current
versus voltage drop.
1.4
1.2
1.0
K
f
Fig. 2 Recovery charge versus -di
F
/dt.
Fig. 3 Peak reverse current versus
-di
F
/dt.
60
V
50
40
30
t
fr
20
400
V
FR
1200
ns
1000
800
t
fr
600
1.0
µs
0.8
T
VJ
=100°C
V
R
=540V
I
RM
0.8
0.6
t
rr
max.
0.6
I
F
=11A
I
F
=22A
I
F
=11A
I
F
=5.5A
V
FR
Q
R
0.4
0.4
0.2
0.2
0.0
0
40
T
J
80
120 °C 160
0.0
0
100
200
-di
F
/dt
300 A/µs 400
typ.
10
0
0
100
200
di
F
/dt
T
VJ
=125°C
I
F
=11A
300 A/µs 400
200
0
Fig. 4 Dynamic parameters versus
junction temperature.
Fig. 5 Recovery time versus -di
F
/dt.
Fig. 6 Peak forward voltage
versus di
F
/dt.
Dimensions
Dim.
A
B
C
D
E
F
G
H
J
K
L
M
N
Q
Millimeter
Min. Max.
12.70 14.73
14.23 16.51
9.66 10.66
3.54 4.08
5.85
2.54
1.15
-
0.64
4.83
3.56
0.38
2.04
0.64
6.85
3.42
1.77
6.35
0.89
5.33
4.82
0.56
2.49
1.39
Min.
Inches
Max.
0.500 0.580
0.560 0.650
0.380 0.420
0.139 0.161
0.230 0.420
0.100 0.135
0.045 0.070
-
0.250
0.025 0.035
0.190 0.210
0.140 0.190
0.015 0.022
0.080 0.115
0.025 0.055
Fig. 7 Transient thermal impedance junction to case.
© 2000 IXYS All rights reserved
2-2
Analog electronics
京公网安备 11010802033920号
EEWORLD
