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MRF406

Description
Power Bipolar Transistor, 4A I(C), 20V V(BR)CEO, 1-Element, NPN, Silicon, Ceramic, Metal-Sealed Cofired, 4 Pin
CategoryDiscrete semiconductor    The transistor   
File Size39KB,1 Pages
ManufacturerMotorola ( NXP )
Websitehttps://www.nxp.com
Download Datasheet Parametric Compare View All

MRF406 Overview

Power Bipolar Transistor, 4A I(C), 20V V(BR)CEO, 1-Element, NPN, Silicon, Ceramic, Metal-Sealed Cofired, 4 Pin

MRF406 Parametric

Parameter NameAttribute value
Is it Rohs certified?incompatible
MakerMotorola ( NXP )
Reach Compliance Codeunknown
Maximum collector current (IC)4 A
Collector-based maximum capacity200 pF
Collector-emitter maximum voltage20 V
ConfigurationSINGLE
Minimum DC current gain (hFE)10
JESD-30 codeO-CRFM-F4
JESD-609 codee0
Number of components1
Number of terminals4
Maximum operating temperature200 °C
Package body materialCERAMIC, METAL-SEALED COFIRED
Package shapeROUND
Package formFLANGE MOUNT
Peak Reflow Temperature (Celsius)NOT SPECIFIED
Polarity/channel typeNPN
Maximum power consumption environment80 W
Maximum power dissipation(Abs)80 W
Certification statusNot Qualified
surface mountNO
Terminal surfaceTin/Lead (Sn/Pb)
Terminal formFLAT
Terminal locationRADIAL
Maximum time at peak reflow temperatureNOT SPECIFIED
transistor applicationsAMPLIFIER
Transistor component materialsSILICON

MRF406 Related Products

MRF406 MRF750
Description Power Bipolar Transistor, 4A I(C), 20V V(BR)CEO, 1-Element, NPN, Silicon, Ceramic, Metal-Sealed Cofired, 4 Pin RF Small Signal Bipolar Transistor, 0.2A I(C), 1-Element, Ultra High Frequency Band, Silicon, NPN
Maker Motorola ( NXP ) Motorola ( NXP )
Reach Compliance Code unknown unknown
Maximum collector current (IC) 4 A 0.2 A
Collector-based maximum capacity 200 pF 5 pF
Collector-emitter maximum voltage 20 V 13 V
Configuration SINGLE SINGLE
Minimum DC current gain (hFE) 10 20
JESD-30 code O-CRFM-F4 O-CRDB-F4
Number of components 1 1
Number of terminals 4 4
Package body material CERAMIC, METAL-SEALED COFIRED CERAMIC, METAL-SEALED COFIRED
Package shape ROUND ROUND
Package form FLANGE MOUNT DISK BUTTON
Polarity/channel type NPN NPN
Certification status Not Qualified Not Qualified
surface mount NO YES
Terminal form FLAT FLAT
Terminal location RADIAL RADIAL
transistor applications AMPLIFIER AMPLIFIER
Transistor component materials SILICON SILICON
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