5KP5.0 thru 5KP188A
Vishay Semiconductors
formerly General Semiconductor
T
RANS
Z
ORB
®
Transient Voltage Suppressors
Stand-off Voltage
5.0 to 188 V
Peak Pulse Power
5000 W
Features
• Glass passivated junction
• 5000 W peak pulse power capability with a
10/1000
µs
waveform, repetition rate (duty cycle):
0.05 %
• Excellent clamping capability
• Low incremental surge resistance
• Very fast response time
• Devices with V
(BR)
> 10 V I
D
are typically less than
1.0
µA
• Available in uni-directional polarity only
• Meets MSL level 1 per J-STD-020C
• AEC-Q101 qualified
Mechanical Data
Case:
Molded plastic body over glass passivated
junction. Epoxy meets UL 94V-0 Flammability rating
Terminals:
Solder plated or matte tin plated
(E3 Suffix) leads, Solderable per J-STD-002B and
Mil-STD-750, Method 2026
High temperature soldering guaranteed:
265 °C/10 seconds, 0.375" (9.5 mm) lead length,
5 lbs. (2.3 kg) tension
Polarity:
The color band denotes the cathode, which
is positive with respect to the anode under normal
TVS operation
Maximum Ratings and Characteristics
Ratings 25 °C, unless otherwise specified
Parameter
Peak pulse power dissipation
Peak pulse current
Steady state power dissipation
Peak forward surge current
Instantaneous forward voltage
Operating junction and storage
temperature range
Notes:
(1) Non-repetitive current pulse, per Fig. 3 and derated above T
A
= 25 °C per Fig. 2.
(2) Mounted on copper pad area of 1.6 x 1.6" (40 x 40 mm) per Fig. 5.
(3) Measured on 8.3 ms single half sine-wave or equivalent square wave, duty cycle = 4 pulses per minute maximum
Test condition
10/1000
µs
waveform
(1)
10/1000
µs
waveform
(1)
lead lengths 0.375“ (9.5 mm),
T
L
= 75 °C
100 A
(3)
(2)
Symbol
P
PPM
I
PPM
P
M(AV)
I
FSM
V
F
T
J
, T
STG
Value
5000
See next table
8.0
600
3.5
-55 to +175
Unit
W
A
W
A
V
°C
8.3 ms single half sine-wave
(3)
Document Number 88308
Rev. 1.2, 27-Oct-04
www.vishay.com
1
5KP5.0 thru 5KP188A
Vishay Semiconductors
formerly General Semiconductor
Electrical Characteristics
(T
A
= 25 °C unless otherwise noted)
Device
Type
Breakdown Voltage
V
(BR)
(V)
(1)
MIN
6.40
6.40
6.67
6.67
7.22
7.22
7.78
7.78
8.33
8.33
8.89
8.89
9.44
9.44
10.0
10.0
11.1
11.1
12.2
12.2
13.3
13.3
14.4
14.4
15.6
15.6
16.7
16.7
17.8
17.8
18.9
18.9
20.0
20.0
22.2
22.2
24.4
24.4
26.7
26.7
28.9
28.9
28.9
31.1
31.1
33.3
33.3
36.7
36.7
40.0
40.0
MAX
7.30
7.00
8.15
7.37
8.82
7.98
9.51
8.60
10.2
9.21
10.9
9.83
11.5
10.4
12.2
11.1
13.6
12.3
14.9
13.5
16.3
14.7
17.6
15.9
19.1
17.2
20.4
18.5
21.8
19.7
23.1
20.9
24.4
22.1
27.1
24.5
29.8
26.9
32.6
29.5
35.3
31.9
31.9
38.0
34.4
40.7
36.8
44.9
40.6
48.9
44.2
Test Current
at I
T
(mA)
Stand-off
Voltage
V
WM
(V)
5.0
5.0
6.0
6.0
6.5
6.5
7.0
7.0
7.5
7.5
8.0
8.0
8.5
8.5
9.0
9.0
10.0
10.0
11.0
11.0
12.0
12.0
13.0
13.0
14.0
14.0
15.0
15.0
16.0
16.0
17.0
17.0
18.0
18.0
20.0
20.0
22.0
22.0
24.0
24.0
26.0
26.0
26.0
28.0
28.0
30.0
30.0
33.0
33.0
36.0
36.0
Maximum
Reverse
Leakage
at V
WM
I
D
(µA)
2000
2000
5000
5000
2000
2000
1000
1000
250
250
150
150
50
50
20
20
15
15
10
10
5.0
5.0
2.0
2.0
2.0
2.0
2.0
2.0
2.0
2.0
2.0
2.0
2.0
2.0
2.0
2.0
2.0
2.0
2.0
2.0
2.0
2.0
2.0
2.0
2.0
2.0
2.0
2.0
2.0
2.0
2.0
Maximum
Peak Pulse
Current
I
PPM(2)
(A)
521
543
439
485
407
446
376
417
350
388
333
368
314
347
296
325
266
294
249
275
227
251
210
233
194
216
186
205
174
192
164
181
155
171
140
154
127
141
116
129
107
119
119
100
110
93.5
103
84.7
93.8
77.8
86.1
Maximum
Clamping
Voltage
at I
PPM
V
C
(V)
9.6
9.2
11.4
10.3
12.3
11.2
13.3
12.0
14.3
12.9
15.0
13.6
15.9
14.4
16.9
15.4
18.8
17.0
20.1
18.2
22.0
19.9
23.8
21.5
25.8
23.2
26.9
24.4
28.8
26.0
30.5
27.6
32.2
29.2
35.8
32.4
39.4
35.5
43.0
38.9
46.6
42.1
42.1
50.1
45.4
53.5
48.4
59.0
53.3
64.3
58.1
Maximum
Temperature
Coefficient
of V
(BR)
(% / °C)
0.057
0.057
0.061
0.061
0.065
0.065
0.068
0.068
0.073
0.073
0.075
0.075
0.078
0.078
0.081
0.081
0.084
0.084
0.086
0.086
0.088
0.088
0.090
0.090
0.092
0.092
0.094
0.094
0.096
0.096
0.097
0.097
0.098
0.098
0.099
0.099
0.100
0.100
0.101
0.101
0.101
0.101
0.101
0.102
0.102
0.103
0.103
0.104
0.104
0.104
0.104
5KP5.0
5KP5.0A
5KP6.0
5KP6.0A
5KP6.5
5KP6.5A
5KP7.0
5KP7.0A
5KP7.5
5KP7.5A
5KP8.0
5KP8.0A
5KP8.5
5KP8.5A
5KP9.0
5KP9.0A
5KP10
5KP10A
5KP11
5KP11A
5KP12
5KP12A
5KP13
5KP13A
5KP14
5KP14A
5KP15
5KP15A
5KP16
5KP16A
5KP17
5KP17A
5KP18
5KP18A
5KP20
5KP20A
5KP22
5KP22A
5KP24
5KP24A
5KP26
5KP26A
5KP26A
5KP28
5KP28A
5KP30
5KP30A
5KP33
5KP33A
5KP36
5KP36A
50
50
50
50
50
50
50
50
5.0
5.0
5.0
5.0
5.0
5.0
5.0
5.0
5.0
5.0
5.0
5.0
5.0
5.0
5.0
5.0
5.0
5.0
5.0
5.0
5.0
5.0
5.0
5.0
5.0
5.0
5.0
5.0
5.0
5.0
5.0
5.0
5.0
5.0
5.0
5.0
5.0
5.0
5.0
5.0
5.0
5.0
5.0
www.vishay.com
2
Document Number 88308
Rev. 1.2, 27-Oct-04
5KP5.0 thru 5KP188A
Vishay Semiconductors
formerly General Semiconductor
Device
Type
Breakdown Voltage
V
(BR)
(V)
(1)
MIN
44.4
44.4
47.8
47.8
50.0
50.0
53.3
53.3
56.1
56.7
60.0
60.0
64.4
64.4
66.7
66.7
71.1
71.1
77.6
77.8
83.3
83.3
86.7
86.7
94.4
94.4
100
100
111
111
122
122
133
133
144
144
167
167
178
178
189
189
209
209
MAX
54.3
49.1
58.4
52.8
61.1
55.3
65.2
58.9
69.3
62.7
73.3
66.3
78.7
71.2
81.5
73.7
96.9
78.6
95.1
86.0
102
92.1
106.0
95.8
115
104
122
111
136
123
149
135
163
147
176
159
204
185
218
197
231
209
255
231
Test Current
at I
T
(mA)
Stand-off
Voltage
V
WM
(V)
40.0
40.0
43.0
43.0
45.0
45.0
48.0
48.0
51.0
51.0
54.0
54.0
58.0
58.0
60.0
60.0
64.0
64.0
70.0
70.0
75.0
75.0
78.0
78.0
85.0
85.0
90.0
90.0
100
100
110
110
120
120
130
130
150
150
160
160
170
170
188
188
Maximum
Reverse
Leakage
at V
WM
I
D
(µA)
2.0
2.0
2.0
2.0
2.0
2.0
2.0
2.0
2.0
2.0
2.0
2.0
2.0
2.0
2.0
2.0
2.0
2.0
2.0
2.0
2.0
2.0
2.0
2.0
2.0
2.0
2.0
2.0
2.0
2.0
2.0
2.0
2.0
2.0
2.0
2.0
2.0
2.0
2.0
2.0
2.0
2.0
2.0
2.0
Maximum
Peak Pulse
Current
I
PPM(2)
(A)
70.0
77.5
65.2
72.0
62.3
68.8
58.5
64.6
54.9
60.7
51.9
57.4
48.5
53.4
46.7
51.7
43.9
48.5
40.0
44.2
37.3
41.3
36.0
39.7
33.1
36.5
31.3
34.2
27.9
30.9
25.5
28.2
23.4
25.9
21.6
23.9
18.7
20.6
17.4
19.3
16.4
18.2
14.5
15.2
Maximum
Clamping
Voltage
at I
PPM
V
C
(V)
71.4
64.5
76.7
69.4
80.3
72.7
85.5
77.4
91.1
82.4
96.3
87.1
103
94
107
97
114
103
125
113
134
121
139
126
151
137
160
146
179
162
196
177
214
193
230
209
268
243
287
259
304
275
344
328
Maximum
Temperature
Coefficient
of V
(BR)
(% / °C)
0.105
0.105
0.105
0.105
0.106
0.106
0.106
0.106
0.107
0.107
0.107
0.107
0.107
0.107
0.108
0.108
0.108
0.108
0.108
0.108
0.108
0.108
0.108
0.108
0.108
0.110
0.110
0.110
0.110
0.110
0.112
0.112
0.112
0.112
0.112
0.112
0.112
0.112
0.112
0.112
0.112
0.112
0.112
0.112
5KP40
5KP40A
5KP43
5KP43A
5KP45
5KP45A
5KP48
5KP48A
5KP51
5KP51A
5KP54
5KP54A
5KP58
5KP58A
5KP60
5KP60A
5KP64
5KP64A
5KP70
5KP70A
5KP75
5KP75A
5KP78
5KP78A
5KP85
5KP85A
5KP90
5KP90A
5KP100
5KP100A
5KP110
5KP110A
5KP120
5KP120A
5KP130
5KP130A
5KP150
5KP150A
5KP160
5KP160A
5KP170
5KP170A
5KP188
5KP188A
Notes:
5.0
5.0
5.0
5.0
5.0
5.0
5.0
5.0
5.0
5.0
5.0
5.0
5.0
5.0
5.0
5.0
5.0
5.0
5.0
5.0
5.0
5.0
5.0
5.0
5.0
5.0
5.0
5.0
5.0
5.0
5.0
5.0
5.0
5.0
5.0
5.0
5.0
5.0
5.0
5.0
5.0
5.0
5.0
5.0
(1) V
(BR)
measured after I
T
applied for 300 µs I
T
= square wave pulse or equivalent
(2) Surge current waveform per Fig. 3 and derate per Fig. 2
(3) All items and symbols are consistent with ANSI/IEEE C62.35
Document Number 88308
Rev. 1.2, 27-Oct-04
www.vishay.com
3
5KP5.0 thru 5KP188A
Vishay Semiconductors
formerly General Semiconductor
Application
The 5KP series of high power transient voltage sup-
pressors were designed to be used on the output of
switching power supplies. These devices may be
used to replace crowbar circuits. Both the 5 and 10
percent voltage tolerances are referenced to the
power supply output voltage level.
They are able to withstand high levels of peak current
while allowing a circuit breaker to trip or a fuse blow
before shorting. This will enable the user to reset the
breaker or replace the fuse and continue operation.
For this type operation, it is recommended that a suf-
ficient mounting surface be used for dissipating the
heat generated by the Transient Voltage Suppressor
during the transient or over-voltage condition.
Ratings and Characteristics Curves
(T
A
= 25
°C
unless otherwise specified)
100
P
PPM
, Peak Pulse Power (kW)
I
PPM
- Peak Pulse Current, % I
RSM
Non-repetitive pulse
waveform shown in
Fig. 3 T
A
= 25
°C
150
tr = 10
µsec.
Peak Value
I
PPM
T
J
= 25
°C
Pulse Width (td)
is defined as the point
where the peak current
decays to 50 % of I
PPM
10
100
Half Value - IPP
2
I
PPM
50
10/1000
µsec.
Waveform
as defined by R.E.A.
1.0
td
0
0
1.0
2.0
3.0
4.0
0.1
0.1µs 1.0µs
10µs
100µs
td, Pulse Width
1.0ms
10ms
t - Time (ms)
Figure 1. Peak Pulse Power Rating Curve
Figure 3. Pulse Waveform
Peak Pulse Power (P
PP
) or Current (I
PP
)
Derating in Percentage, %
100
100,000
C
J
, Junction Capacitance (pF)
T
J
= 25
°C
f = 1 MHz
Vsig = 50 m Vp-p
Measured at
Zero Bias
Measured at
Stand-off Voltage,
V
WM
75
10,000
50
1,000
25
0
100
0
25 50 75 100 125 150 175 200
T
A
- Ambient Temperature (°C)
Figure 2. Pulse Power Derating Curve
1
10
100
V
WM
- Reverse Stand-off Voltage (V)
200
Figure 4. Typical Junction Capacitance
www.vishay.com
4
Document Number 88308
Rev. 1.2, 27-Oct-04
5KP5.0 thru 5KP188A
Vishay Semiconductors
formerly General Semiconductor
I
FSM
, Peak Forward Surge Current (A)
8
P
PM(AV)
, Steady State Power
Dissipation (W)
500
450
400
350
300
250
200
1
10
Number of Cycles at 60 H
Z
100
60 H
Z
Resistive or Inductive Load
8.3 ms Single Half Sine-Wave
(JEDEC Method)
6
4
0.375" (9.5 mm)
Lead Length
2
0.8 x 0.8 x 0.040" (20 x 20 mm)
Copper Heat Sink
0
0
25
50 75 100 125 150 175 200
T
L
, Lead Temperature (°C)
Figure 5. Steady State Power Derating Curve
Figure 6. Maximum Non-repetitive Forward Surge Current
Package Dimensions in Inches (mm)
Case Style P600
1.0 (25.4)
MIN.
0.360 (9.1)
0.340 (8.6)
0.360 (9.1)
0.340 (8.6)
0.052 (1.32)
0.048 (1.22)
DIA.
1.0 (25.4)
MIN.
Document Number 88308
Rev. 1.2, 27-Oct-04
www.vishay.com
5
Discrete Device
京公网安备 11010802033920号
EEWORLD
