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933200910113

Description
DIODE 6.2 V, SILICON, VOLTAGE REFERENCE DIODE, DO-34, Voltage Reference Diode
CategoryDiscrete semiconductor    diode   
File Size29KB,5 Pages
ManufacturerNXP
Websitehttps://www.nxp.com
Download Datasheet Parametric View All

933200910113 Overview

DIODE 6.2 V, SILICON, VOLTAGE REFERENCE DIODE, DO-34, Voltage Reference Diode

933200910113 Parametric

Parameter NameAttribute value
MakerNXP
package instructionO-LALF-W2
Reach Compliance Codeunknown
ECCN codeEAR99
Shell connectionISOLATED
ConfigurationSINGLE
Diode component materialsSILICON
Diode typeZENER DIODE
JEDEC-95 codeDO-34
JESD-30 codeO-LALF-W2
Number of components1
Number of terminals2
Maximum operating temperature200 °C
Package body materialGLASS
Package shapeROUND
Package formLONG FORM
Maximum power dissipation0.4 W
Certification statusNot Qualified
Nominal reference voltage6.2 V
surface mountNO
technologyZENER
Terminal formWIRE
Terminal locationAXIAL
Voltage temperatureCoeff-Max0.062 mV/°C
Working test current7.5 mA
DISCRETE SEMICONDUCTORS
DATA SHEET
halfpage
M3D050
1N821 to 1N829
1N821A to 1N829A
Voltage reference diodes
Product specification
Supersedes data of March 1991
1996 Mar 20
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