PESD5V0U2BMB
83B
Ultra low capacitance bidirectional double ESD protection
array
Rev. 1 — 13 March 2012
Product data sheet
1. Product profile
1.1 General description
Ultra low capacitance bidirectional double ElectroStatic Discharge (ESD) protection array
designed to protect up to two signal lines from the damage caused by ESD and other
transients. The device is housed in a leadless ultra small SOT883B (DFN1006B-3)
Surface-Mounted Device (SMD) plastic package.
SO
T8
1.2 Features and benefits
ESD protection of up to two lines
AEC-Q101 qualified
Ultra low diode capacitance C
d
= 2.9 pF
ESD protection up to 10 kV
IEC 61000-4-2; level 4 (ESD)
Ultra low leakage current I
RM
= 5 nA
1.3 Applications
Computers and peripherals
Audio and video equipment
Cellular handsets and accessories
Communication systems
Portable electronics
SIM card protection
FireWire
High-speed data lines
1.4 Quick reference data
Table 1.
Symbol
Per diode
V
RWM
C
d
reverse standoff voltage
diode capacitance
f = 1 MHz; V
R
= 0 V
-
-
-
2.9
5
3.5
V
pF
Quick reference data
Parameter
Conditions
Min
Typ
Max
Unit
NXP Semiconductors
PESD5V0U2BMB
Ultra low capacitance bidirectional double ESD protection array
2. Pinning information
Table 2.
Pin
1
2
3
Pinning
Description
cathode
cathode
common cathode
1
3
2
Transparent
top view
2
006aab331
Simplified outline
Graphic symbol
1
3
3. Ordering information
Table 3.
Ordering information
Package
Name
PESD5V0U2BMB
Description
Version
SOT883B
DFN1006B-3 leadless ultra small plastic package;
3 solder lands; body 1.0
0.6
0.37 mm
Type number
4. Marking
Table 4.
Marking codes
Marking code
[1]
0001 1010
Type number
PESD5V0U2BMB
[1]
For SOT883B binary marking code description, see
Figure 1.
4.1 Binary marking code description
PIN 1 INDICATION
READING DIRECTION
READING EXAMPLE:
0111
1011
MARKING CODE
(EXAMPLE)
READING DIRECTION
006aac673
Fig 1.
SOT883B binary marking code description
PESD5V0U2BMB
All information provided in this document is subject to legal disclaimers.
© NXP B.V. 2012. All rights reserved.
Product data sheet
Rev. 1 — 13 March 2012
2 of 13
NXP Semiconductors
PESD5V0U2BMB
Ultra low capacitance bidirectional double ESD protection array
5. Limiting values
Table 5.
Limiting values
In accordance with the Absolute Maximum Rating System (IEC 60134).
Symbol
Per diode
I
PPM
Per device
T
j
T
amb
T
stg
[1]
[2]
Parameter
rated peak pulse current
junction temperature
ambient temperature
storage temperature
Conditions
t
p
= 8/20
s
[1][2]
Min
-
-
55
65
Max
1.5
150
+150
+150
Unit
A
C
C
C
Device stressed with ten non-repetitive current pulses (8/20
s
exponential decay waveform according to
IEC 61000-4-5 and IEC 61643-321).
Measured from pin 1 or 2 to 3.
Table 6.
ESD maximum ratings
T
amb
= 25
C unless otherwise specified.
Symbol
Per diode
V
ESD
electrostatic
discharge voltage
IEC 61000-4-2
(contact discharge)
machine model
MIL-STD-883
(human body model)
[1]
[2]
Device stressed with ten non-repetitive ESD pulses.
Measured from pin 1 or 2 to 3.
[1][2]
Parameter
Conditions
Min
-
-
-
Max
10
400
8
Unit
kV
V
kV
[2]
Table 7.
Standard
Per diode
ESD standards compliance
Conditions
> 8 kV (contact)
> 8 kV
IEC 61000-4-2; level 4 (ESD)
MIL-STD-883; class 3B (human body model)
PESD5V0U2BMB
All information provided in this document is subject to legal disclaimers.
© NXP B.V. 2012. All rights reserved.
Product data sheet
Rev. 1 — 13 March 2012
3 of 13
NXP Semiconductors
PESD5V0U2BMB
Ultra low capacitance bidirectional double ESD protection array
001aaa631
120
I
PP
(%)
80
100 % I
PP
; 8
μs
001aaa630
I
PP
100 %
90 %
e
−t
50 % I
PP
; 20
μs
40
10 %
t
r
=
0.7 ns to 1 ns
0
10
20
30
t (μs)
40
30 ns
60 ns
t
0
Fig 2.
8/20
s
pulse waveform according to
IEC 61000-4-5 and IEC 61643-321
Fig 3.
ESD pulse waveform according to
IEC 61000-4-2
6. Characteristics
Table 8.
Characteristics
T
amb
= 25
C unless otherwise specified.
Symbol Parameter
Per diode
V
RWM
I
RM
V
BR
C
d
V
CL
reverse standoff
voltage
reverse leakage current V
RWM
= 5 V
breakdown voltage
diode capacitance
clamping voltage
I
PP
= 1 A
I
PPM
= 1.5 A
r
dyn
[1]
[2]
[3]
Conditions
Min
-
-
5.5
-
-
[1][2]
Typ
-
5
6.5
2.9
1.9
-
-
0.6
Max
5
100
9.5
3.5
-
10
12
-
Unit
V
nA
V
pF
pF
V
V
I
R
= 5 mA
f = 1 MHz; V
R
= 0 V
f = 1 MHz; V
R
= 5 V
-
-
[3]
dynamic resistance
I
R
= 10 A
-
Device stressed with 8/20
s
exponential decay waveform according to IEC 61000-4-5 and IEC 61643-321.
Measured from pin 1 or 2 to 3.
Non-repetitive current pulse, Transmission Line Pulse (TLP) t
p
= 100 ns; square pulse;
ANS/IESD STM5-1-2008.
PESD5V0U2BMB
All information provided in this document is subject to legal disclaimers.
© NXP B.V. 2012. All rights reserved.
Product data sheet
Rev. 1 — 13 March 2012
4 of 13
NXP Semiconductors
PESD5V0U2BMB
Ultra low capacitance bidirectional double ESD protection array
3.0
C
d
(pF)
2.6
006aab036
I
PPM
I
PP
−V
CL
−V
BR
−V
RWM
I
R
I
RM
−I
RM
−I
R
V
RWM
V
BR
V
CL
2.2
−
+
1.8
0
1
2
3
4
V
R
(V)
5
−I
PP
−I
PPM
006aab325
f = 1 MHz; T
amb
= 25
C
Fig 4.
Diode capacitance as a function of reverse
voltage; typical values
Fig 5.
V-I characteristics for a bidirectional
ESD protection diode
PESD5V0U2BMB
All information provided in this document is subject to legal disclaimers.
© NXP B.V. 2012. All rights reserved.
Product data sheet
Rev. 1 — 13 March 2012
5 of 13
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