EEWORLDEEWORLDEEWORLD

Part Number

Search

IRHM8360PBF

Description
Power Field-Effect Transistor, 22A I(D), 400V, 0.22ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-254AA
CategoryDiscrete semiconductor    The transistor   
File Size323KB,12 Pages
ManufacturerInternational Rectifier ( Infineon )
Websitehttp://www.irf.com/
Environmental Compliance  
Download Datasheet Parametric View All

IRHM8360PBF Overview

Power Field-Effect Transistor, 22A I(D), 400V, 0.22ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-254AA

IRHM8360PBF Parametric

Parameter NameAttribute value
Is it lead-free?Lead free
Is it Rohs certified?conform to
MakerInternational Rectifier ( Infineon )
package instructionFLANGE MOUNT, S-MSFM-P3
Reach Compliance Codecompliant
Other featuresRADIATION HARDENED
Avalanche Energy Efficiency Rating (Eas)500 mJ
Shell connectionISOLATED
ConfigurationSINGLE
Minimum drain-source breakdown voltage400 V
Maximum drain current (ID)22 A
Maximum drain-source on-resistance0.22 Ω
FET technologyMETAL-OXIDE SEMICONDUCTOR
JEDEC-95 codeTO-254AA
JESD-30 codeS-MSFM-P3
Number of components1
Number of terminals3
Operating modeENHANCEMENT MODE
Maximum operating temperature150 °C
Package body materialMETAL
Package shapeSQUARE
Package formFLANGE MOUNT
Peak Reflow Temperature (Celsius)260
Polarity/channel typeN-CHANNEL
Maximum power consumption environment250 W
Maximum pulsed drain current (IDM)88 A
Certification statusNot Qualified
surface mountNO
Terminal formPIN/PEG
Terminal locationSINGLE
Maximum time at peak reflow temperature40
transistor applicationsSWITCHING
Transistor component materialsSILICON
Maximum off time (toff)215 ns
Maximum opening time (tons)92 ns
PD - 90823A
REPETITIVE AVALANCHE AND dv/dt RATED
HEXFET
®
TRANSISTOR
400Volt, 0.22Ω, MEGA RAD HARD HEXFET
International Rectifier’s RAD HARD technology
HEXFETs demonstrate excellent threshold voltage
stability and breakdown voltage stability at total
radiaition doses as high as 1x10
6
Rads(Si). Under
identical
pre- and post-irradiation test conditions, In-
ternational Rectifier’s RAD HARD HEXFETs retain
identical
electrical specifications up to 1 x 10
5
Rads
(Si) total dose. No compensation in gate drive circuitry
is required. These devices are also capable of surviv-
ing transient ionization pulses as high as 1 x 10
12
Rads
(Si)/Sec, and return to normal operation within a few
microseconds. Since the RAD HARD process utilizes
International Rectifier’s patented HEXFET technology,
the user can expect the highest quality and reliability
in the industry.
RAD HARD HEXFET transistors also feature all of
the well-established advantages of MOSFETs, such
as voltage control, very fast switching, ease of paral-
leling and temperature stability of the electrical pa-
rameters. They are well-suited for applications such
as switching power supplies, motor controls, invert-
ers, choppers, audio amplifiers and high-energy
pulse circuits in space and weapons environments.
IRHM7360
IRHM8360
N CHANNEL
MEGA RAD HARD
Product Summary
Part Number
IRHM7360
IRHM8360
BV
DSS
400V
400V
R
DS(on)
0.22Ω
0.22Ω
I
D
22A
22A
Features:
n
n
n
n
n
n
n
n
n
n
n
n
n
Radiation Hardened up to 1 x 10
6
Rads (Si)
Single Event Burnout (SEB) Hardened
Single Event Gate Rupture (SEGR) Hardened
Gamma Dot (Flash X-Ray) Hardened
Neutron Tolerant
Identical Pre- and Post-Electrical Test Conditions
Repetitive Avalanche Rating
Dynamic dv/dt Rating
Simple Drive Requirements
Ease of Paralleling
Hermetically Sealed
Electrically Isolated
Ceramic Eyelets
Absolute Maximum Ratings

Parameter
ID @ VGS = 12V, TC = 25°C
ID @ VGS = 12V, TC = 100°C
IDM
PD @ TC = 25°C
VGS
EAS
IAR
EAR
dv/dt
TJ
T STG
Continuous Drain Current
Continuous Drain Current
Pulsed Drain Current
‚
Max. Power Dissipation
Linear Derating Factor
Gate-to-Source Voltage
Single Pulse Avalanche Energy
ƒ
Avalanche Current
‚
Repetitive Avalanche Energy‚
Peak Diode Recovery dv/dt
„
Operating Junction
Storage Temperature Range
Lead Temperature
Weight
22
14
88
250
2.0
±20
500
22
25
4.0
-55 to 150
Pre-Irradiation
IRHM7230, IRHM8230
Units
A
W
W/°C
V
mJ
A
mJ
V/ns
o
C
g
300 (0.063 in. (1.6mm) from case for 10s)
9.3 (typical)
www.irf.com
1
10/28/98
Understanding Metastability
...
至芯科技FPGA大牛 FPGA/CPLD
Find component model
In the picture, the glass-encapsulated plug-in diode placed on the resistor has a 5 2D (ZD?) written on it. 5 and 2D are not in the same row. What type of diode is it? I can't find it. What kind of ca...
呜呼哀哉 Analog electronics
DSP Hardware
DSP Hardware...
lorant DSP and ARM Processors
USB driver, the application can open the device, but it is stuck in SubmitUrb when sending data
What is the reason that blocks sending data? PURB pUrb = m_Endpoint2OUT.BuildBulkTransfer( Mem,//(PVOID)buffer, // Where is data coming from? BufferLength, // How much data to write? FALSE, // directi...
suery Embedded System
A DSP selection problem with extremely small computational workload and extremely high speed requirements
Hello everyone, I have a problem. Recently, I have a task. Simply put, it is to perform autocorrelation calculation on the sampling results of several external signals, and send some control signals a...
lixiaohua5414 DSP and ARM Processors
Remember! Don't put 0.1uF capacitors on everything you see.
[p=19, null, left][size=13px] We can see all kinds of capacitors in the power filter circuit, 100uF, 10uF, 100nF, 10nF different capacitance values, so how are these parameters determined? Don't tell ...
qwqwqw2088 Energy Infrastructure?

EEWorld
subscription
account

EEWorld
service
account

Automotive
development
circle

Robot
development
community

Index Files: 1122  1298  1042  2371  2155  23  27  21  48  44 
Datasheet   0 1 2 3 4 5 6 7 8 9 A B C D E F G H I J K L M N O P Q R S T U V W X Y Z
Room 1530, 15th Floor, Building B, No. 18 Zhongguancun Street, Haidian District, Beijing Telephone: (010) 82350740 Postal Code: 100190
Copyright © 2005-2026 EEWORLD.com.cn, Inc. All rights reserved 京ICP证060456号 京ICP备10001474号-1 电信业务审批[2006]字第258号函 京公网安备 11010802033920号