IRHM58160 datasheet, PDF - EEWORLD Datasheet

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IRHM58160: DescriptionPower Field-Effect Transistor, 35A I(D), 100V, 0.018ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-254AA, HERMETIC SEALED, CERAMIC PACKAGE-3; CategoryDiscrete semiconductor The transistor; File Size158KB，8 Pages; ManufacturerInfineon; Websitehttp://www.infineon.com/

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IRHM58160 Overview

Power Field-Effect Transistor, 35A I(D), 100V, 0.018ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-254AA, HERMETIC SEALED, CERAMIC PACKAGE-3

IRHM58160 Parametric

Parameter Name	Attribute value
Is it Rohs certified?	incompatible
Maker	Infineon
package instruction	HERMETIC SEALED, CERAMIC PACKAGE-3
Reach Compliance Code	not_compliant
ECCN code	EAR99
Other features	AVALANCHE RATED
Avalanche Energy Efficiency Rating (Eas)	500 mJ
Shell connection	ISOLATED
Configuration	SINGLE WITH BUILT-IN DIODE
Minimum drain-source breakdown voltage	100 V
Maximum drain current (Abs) (ID)	35 A
Maximum drain current (ID)	35 A
Maximum drain-source on-resistance	0.018 Ω
FET technology	METAL-OXIDE SEMICONDUCTOR
JEDEC-95 code	TO-254AA
JESD-30 code	S-CSFM-T3
JESD-609 code	e0
Number of components	1
Number of terminals	3
Operating mode	ENHANCEMENT MODE
Maximum operating temperature	150 °C
Package body material	CERAMIC, METAL-SEALED COFIRED
Package shape	SQUARE
Package form	FLANGE MOUNT
Peak Reflow Temperature (Celsius)	NOT SPECIFIED
Polarity/channel type	N-CHANNEL
Maximum power dissipation(Abs)	250 W
Maximum pulsed drain current (IDM)	140 A
Certification status	Not Qualified
surface mount	NO
Terminal surface	Tin/Lead (Sn/Pb)
Terminal form	THROUGH-HOLE
Terminal location	SINGLE
Maximum time at peak reflow temperature	NOT SPECIFIED
transistor applications	SWITCHING
Transistor component materials	SILICON

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PD-93784G

RADIATION HARDENED

POWER MOSFET

THRU-HOLE (TO-254AA)

Product Summary

Part Number Radiation Level

IRHM57160

100K Rads (Si)

IRHM53160

IRHM54160

IRHM58160

300K Rads (Si)

600K Rads (Si)

1000K Rads (Si)

DS(on)

0.018Ω

0.019Ω

35A*

IRHM57160

100V, N-CHANNEL

TECHNOLOGY

TO-254AA

International Rectifier’s R5

technology provides

high performance power MOSFETs for space appli-

cations. These devices have been characterized for

Single Event Effects (SEE) with useful performance

up to an LET of 80 (MeV/(mg/cm

)). The combination

of low

RDS(on)

and low gate charge reduces the power

losses in switching applications such as DC to DC

converters and motor control. These devices retain

all of the well established advantages of MOSFETs

such as voltage control, fast switching, ease of paral-

leling and temperature stability of electrical param-

eters.

Features:

Single Event Effect (SEE) Hardened

Neutron Tolerant

Identical Pre- and Post-Electrical Test Conditions

Repetitive Avalanche Ratings

Dynamic dv/dt Ratings

Simple Drive Requirements

Ease of Paralleling

Hermatically Sealed

Electically Isolated

Ceramic Eyelets

Light Weight

Absolute Maximum Ratings

Parameter

ID @ VGS = 12V, TC = 25°C

ID @ VGS = 12V, TC = 100°C

IDM

PD @ TC = 25°C

VGS

EAS

IAR

EAR

dv/dt

T STG

Continuous Drain Current

Pulsed Drain Current

Max. Power Dissipation

Linear Derating Factor

Gate-to-Source Voltage

Single Pulse Avalanche Energy

Avalanche Current

Repetitive Avalanche Energy

Peak Diode Recovery dv/dt

Operating Junction

Storage Temperature Range

Lead Temperature

Weight

* Current is limited by package

For footnotes refer to the last page

35*

140

250

2.0

±20

500

3.4

-55 to 150

Pre-Irradiation

Units

W/°C

V/ns

°C

300 (0.063 in. /1.6 mm from case for 10s)

9.3 (Typical)

www.irf.com

01/07/11

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