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L-51ROPT1D2

Description
Photo Transistor
CategoryLED optoelectronic/LED    photoelectric   
File Size65KB,1 Pages
ManufacturerParalight
Websitehttp://www.paralighttaiwan.com/web/zh/home-tw/
Download Datasheet Parametric View All

L-51ROPT1D2 Overview

Photo Transistor

L-51ROPT1D2 Parametric

Parameter NameAttribute value
MakerParalight
Reach Compliance Codeunknown
L-51ROPT1XX
5.0mm PHOTOTRANSISTOR
◆PACKAGE
DIMENSIONS
ABSOLUTE MAXIMUN RATING: (Ta=25℃)
Part No.
L-51ROPT1XX
P
D
(mw)
10
V
BR
CEO
(V)
Topr
Tstg
-35℃ to 85℃
Storage Temperature Range
-35℃ to 85℃
30
Reverse break down
Operating Temperature
PARAMETER
Power Dissipation
Voltage
Range
Lead Soldering Temperature { 1.6mm ( 0.063 inch ) From Body } 250℃±5℃For 3 Seconds
ELECTRO-OPTICAL CHARACTERISTICS: (Ta=25℃)
Part No.
BV
CEO
(V)
BV
ECO
(V)
I
CEO
(nA)
V
CE(S)
(V)
t
R
/t
F
(uS)
Min Typ Max Min Typ Max Min Typ Max Min Typ Max Min
Typ
I
C
(mA)
1.8 2.4
1.7 2.2
1.7 2.2
C
CB
(pF)
6.4
6.4
6.4
△λ(nm)
Min Peak Max
Max Min Typ Max Min Typ Max
L-51ROPT1C 30
L-51ROPT1D1 30
L-51ROPT1D2 30
5
5
5
100
100
100
0.4
0.4
0.4
15/15
15/15
15/15
400
900 940
800 870
1050
TEST
CONDITION
I
C
=100uA
Ee=0mW/cm
2
I
E
=100uA
Ee=0mW/cm
2
V
CE
= 20V
Ee=0mW/cm
2
I
C
= 2mA
Ee=0.5mW/cm
2
V
CE
= 5V
I
C
= 1mA
RL= 1000Ω
V
CE
= 5V
Ee=0.1mW/cm
2
f =1MHZ
V
CB
=3V
Ee=0mW/cm
2
PARAMETER
COLLECTOR-
EMITTER
BREAKDOWN
VOLTAGE
EMITTER-
COLLECTOR
BREAKDOWN
VOLTAGE
COLLECTOR
DARK
CURRENT
COLLECTOR-
EMITTER
SATURATION
VOLTAGE
RISE/FALL
TIME
ON STATE
COLLECTOR
CURRENT
COLLECTOR
BASE
CAPACITANCE
SPECTRAL
SENSITIVITY
WAVELENGTH
D1,D2=BLACK
1. All dimension are in millimeter (inches).
2. Tolerance is ±0.25mm( 0.01”)unless otherwise specified.
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