Philips Semiconductors
Product Specification
Logic level TOPFET
PIP3102-R
DESCRIPTION
Monolithic logic level protected
power MOSFET using
TOPFET2
technology assembled in a 5 pin
surface mounting plastic package.
QUICK REFERENCE DATA
SYMBOL
V
DS
I
D
P
tot
T
j
R
DS(ON)
SYMBOL
V
PS
PARAMETER
Continuous drain source voltage
Continuous drain current
Total power dissipation
Continuous junction temperature
Drain-source on-state resistance
PARAMETER
Protection supply voltage
MAX.
50
30
90
150
28
NOM.
5
UNIT
V
A
W
˚C
mΩ
UNIT
V
APPLICATIONS
General purpose switch for driving
lamps
motors
solenoids
heaters
FEATURES
TrenchMOS output stage with
low on-state resistance
Separate input pin for higher
frequency drive
5 V logic compatible input
Separate supply pin for logic
and protection circuits with low
operating current
Overtemperature protection
Drain current limiting
Short circuit load protection
Latched overload trip state reset
by the protection pin
Diagnostic flag pin indicates
protection supply connected,
overtemperature condition,overload
tripped state, or open circuit load
(detected in the off-state)
ESD protection on all pins
Overvoltage clamping
FUNCTIONAL BLOCK DIAGRAM
PROTECTION SUPPLY
DRAIN
FLAG
OC LOAD
DETECT
O/V
CLAMP
INPUT
POWER
RIG
MOSFET
LOGIC AND
PROTECTION
SOURCE
Fig.1. Elements of the TOPFET.
PINNING - SOT426
PIN
1
2
3
4
5
mb
input
flag
(connected to mb)
protection supply
source
drain
DESCRIPTION
PIN CONFIGURATION
mb
SYMBOL
D
TOPFET
P
F
I
P
3
1 2
4 5
S
Fig. 2.
Fig. 3.
October 2002
1
Rev 1.000
Philips Semiconductors
Product Specification
Logic level TOPFET
PIP3102-R
LIMITING VALUES
Limiting values in accordance with the Absolute Maximum Rating System (IEC 134)
SYMBOL
V
DS
I
D
I
I
I
F
I
P
P
tot
T
stg
T
j
T
sold
PARAMETER
Continuous voltage
Drain source voltage
1
Continuous currents
Drain current
Input current
Flag current
Protection supply current
Thermal
Total power dissipation
Storage temperature
Junction temperature
2
Mounting base temperature
T
mb
= 25˚C
continuous
during soldering
-
-55
-
-
90
175
150
260
W
˚C
˚C
˚C
V
PS
= 5 V; T
mb
= 25˚C
V
PS
= 0 V; T
mb
= 85˚C
-
-
-5
-5
-5
self -
limited
30
5
5
5
A
A
mA
mA
mA
V
IS
= 0 V
-
50
V
CONDITIONS
MIN.
MAX.
UNIT
ESD LIMITING VALUE
SYMBOL
V
C
PARAMETER
Electrostatic discharge capacitor
voltage
CONDITIONS
Human body model;
C = 250 pF; R = 1.5 kΩ
MIN.
-
MAX.
2
UNIT
kV
OVERLOAD PROTECTION LIMITING VALUE
With an adequate protection supply
connected, TOPFET can protect
itself from two types of overload -
overtemperature and short circuit
load.
SYMBOL
PARAMETER
Overload protection
3
V
DS
Drain source voltage
For overload conditions an n-MOS
transistor turns on between the
input and source to quickly
discharge the power MOSFET
gate capacitance.
REQUIRED CONDITION
protection supply
V
PS
≥
4 V
0
35
V
The drain current is limited to
reduce dissipation in case of short
circuit load. Refer to OVERLOAD
CHARACTERISTICS.
MIN.
MAX.
UNIT
OVERVOLTAGE CLAMPING LIMITING VALUES
At a drain source voltage above 50 V the power MOSFET is actively turned on to clamp overvoltage transients.
SYMBOL
E
DSM
E
DRM
PARAMETER
Inductive load turn off
Non-repetitive clamping energy
Repetitive clamping energy
CONDITIONS
I
DM
= 20 A; V
DD
≤
20 V
T
mb
= 25˚C
T
mb
≤
95˚C; f = 250 Hz
-
-
350
45
mJ
mJ
MIN.
MAX.
UNIT
1
Prior to the onset of overvoltage clamping. For voltages above this value, safe operation is limited by the overvoltage clamping energy.
2
A higher T
j
is allowed as an overload condition but at the threshold T
j(TO)
the over temperature trip operates to protect the switch.
3
All control logic and protection functions are disabled during conduction of the source drain diode. If the protection circuit was previously
latched, it would be reset by this condition.
October 2002
2
Rev 1.000
Philips Semiconductors
Product Specification
Logic level TOPFET
PIP3102-R
THERMAL CHARACTERISTIC
SYMBOL
R
th j-mb
PARAMETER
Thermal resistance
Junction to mounting base
-
-
1.2
1.39
K/W
CONDITIONS
MIN.
TYP.
MAX.
UNIT
OUTPUT CHARACTERISTICS
Limits are for -40˚C
≤
T
mb
≤
150˚C; typicals are for T
mb
= 25˚C unless otherwise specified.
SYMBOL
V
(CL)DSS
I
DSS
PARAMETER
Off-state
Drain-source clamping voltage
Drain source leakage current
1
On-state
R
DS(ON)
Drain-source resistance
CONDITIONS
V
IS
= 0 V
I
D
= 10 mA
I
DM
= 4 A; tp
≤
300
µs; δ ≤
0.01
V
PS
= 0 V; V
DS
= 40 V
T
mb
= 25˚C
50
50
-
-
-
-
-
60
-
0.1
-
21
70
70
100
10
50
28
V
V
µA
µA
mΩ
mΩ
MIN.
TYP.
MAX.
UNIT
t
p
≤
300
µs; δ ≤
0.01; V
PS
≥
4 V
I
DM
= 10 A; V
IS
≥
4.4 V
T
mb
= 25˚C
INPUT CHARACTERISTICS
Limits are for -40˚C
≤
T
mb
≤
150˚C; typicals are for T
mb
= 25˚C unless otherwise specified.
SYMBOL
V
IS(TO)
I
IS
V
(CL)IS
R
IG
I
ISL
PARAMETER
Normal operation
Input threshold voltage
2
Input current
Input clamping voltage
Internal series resistance
3
Overload protection latched
Input current
I
D
= 1 mA
V
IS
= 5 V
I
I
= 1 mA
to gate of power MOSFET
V
PS
≥
4 V
V
IS
= 5 V
1
2.7
4
mA
T
mb
= 25˚C
0.6
1.1
-
5.5
-
-
1.6
16
6.4
1.7
2.6
2.1
100
8.5
-
V
V
µA
V
kΩ
CONDITIONS
MIN.
TYP.
MAX.
UNIT
1
The drain current required for open circuit load detection is switched off when there is no protection supply, in order to ensure a low off-state
quiescent current. Refer to OPEN CIRCUIT LOAD DETECTION CHARACTERISTICS.
2
The measurement method is simplified if V
PS
= 0 V, in order to distinguish I
D
from I
DSP
. Refer to OPEN CIRCUIT LOAD DETECTION
CHARACTERISTICS.
3
This is not a directly measurable parameter.
October 2002
3
Rev 1.000
Philips Semiconductors
Product Specification
Logic level TOPFET
PIP3102-R
PROTECTION SUPPLY CHARACTERISTICS
Limits are for -40˚C
≤
T
mb
≤
150˚C; typicals are for T
mb
= 25˚C.
SYMBOL
V
PSF
PARAMETER
Protection & detection
Threshold voltage
1
Normal operation or
protection latched
Supply current
Clamping voltage
Overload protection latched
V
PSR
t
pr
Reset voltage
Reset time
V
PS
≤
1 V
1
10
1.8
45
3
120
V
µs
I
F
= 100
µA;
V
DS
= 5 V
2.5
3.45
4
V
µA
V
CONDITIONS
MIN.
TYP.
MAX.
UNIT
I
PS
, I
PSL
V
(CL)PS
V
PS
= 4.5 V
I
P
= 1.5 mA
-
5.5
210
6.5
450
8.5
OPEN CIRCUIT LOAD DETECTION CHARACTERISTICS
An open circuit load condition can be detected while the TOPFET is in the off-state. Refer to
TRUTH TABLE
.
V
PS
= 5 V. Limits are for -40˚C
≤
T
mb
≤
150˚C and typicals are for T
mb
= 25˚C.
SYMBOL
I
DSP
V
DSF
V
ISF
PARAMETER
Off-state drain current
2
Drain threshold voltage
3
Input threshold voltage
4
CONDITIONS
V
IS
= 0 V; 2 V
≤
V
DS
≤
40 V
V
IS
= 0 V
I
D
= 100
µA
MIN.
0.9
0.2
0.3
TYP.
1.8
1
0.8
MAX.
2.7
2
1.1
UNIT
mA
V
V
OVERLOAD CHARACTERISTICS
T
mb
= 25˚C unless otherwise specified.
SYMBOL
I
D
PARAMETER
Short circuit load
Drain current limiting
Overload protection
P
D(TO)
T
DSC
Overload power threshold
Characteristic time
Overtemperature protection
Threshold temperature
CONDITIONS
V
PS
> 4 V
V
IS
= 5 V;
V
PS
> 4 V
device trips if P
D
> P
D(TO)
which determines trip time
5
V
PS
= 5 V
from I
D
≥
4 A or V
DS
> 0.2 V
75
250
185
380
250
600
W
µs
-40˚C
≤
T
mb
≤
150˚C
28.5
44
60
A
MIN.
TYP.
MAX.
UNIT
T
j(TO)
150
170
-
˚C
1
When V
PS
is less than V
PSF
the flag pin indicates low protection supply voltage. Refer to TRUTH TABLE.
2
The drain source current which flows in a normal load when the protection supply is high and the input is low.
3
If V
DS
< V
DSF
then the flag indicates open circuit load.
4
For open circuit load detection, V
IS
must be less than V
ISF
.
5
Trip time t
d sc
varies with overload dissipation P
D
according to the formula t
d sc
≈
T
DSC
/ ln[ P
D
/ P
D(TO)
].
October 2002
4
Rev 1.000
Philips Semiconductors
Product Specification
Logic level TOPFET
PIP3102-R
TRUTH TABLE
For normal, open-circuit load and overload conditions or inadequate protection supply voltage.
Assumes proper external pull-up for flag pin. Refer to
FLAG CHARACTERISTICS
.
CONDITION
Normal on-state
Normal off-state
Open circuit load
Open circuit load
Short circuit load
1
Over temperature
Low protection supply voltage
Low protection supply voltage
PROTECTION
1
1
1
1
1
1
0
0
KEY
‘0’ equals low
‘1’ equals high
‘X’ equals don’t care.
INPUT
1
0
1
0
1
X
1
0
FLAG
0
0
0
1
1
1
1
1
OUTPUT
ON
OFF
ON
OFF
OFF
OFF
ON
OFF
FLAG CHARACTERISTICS
The flag is an open drain transistor which requires an external pull-up circuit.
Limits are for -40˚C
≤
T
mb
≤
150˚C; typicals are for T
mb
= 25˚C.
SYMBOL
V
FSF
I
FSF
I
FSO
V
(CL)FS
R
F
PARAMETER
Flag ‘low’
Flag voltage
Flag saturation current
Flag ‘high’
Flag leakage current
Flag clamping voltage
Application information
Suitable external pull-up
resistance
V
FF
= 5 V
-
47
-
kΩ
CONDITIONS
normal operation; V
PS
= 5 V
I
F
= 100
µA
V
FS
= 5 V
overload or fault
V
FS
= 5 V
I
F
= 100
µA
-
5.5
0.1
6.2
10
8.5
µA
V
-
-
0.8
10
1
-
V
mA
MIN.
TYP.
MAX.
UNIT
SWITCHING CHARACTERISTICS
T
mb
= 25˚C; R
I
= 50
Ω;
R
IS
= 50
Ω;
V
DD
= 15 V; resistive load R
L
= 10
Ω.
SYMBOL
t
d on
t
r
t
d off
t
f
PARAMETER
Turn-on delay time
Rise time
Turn-off delay time
Fall time
V
IS
: 5 V
⇒
0 V
CONDITIONS
V
IS
: 0 V
⇒
5 V
MIN.
-
-
-
-
TYP.
1.8
3.5
11
5
MAX.
5
8
30
12
UNIT
µs
µs
µs
µs
1
In this condition the protection circuit is latched. To reset the latch the protection pin must be taken low. Refer to PROTECTION SUPPLY
CHARACTERISTICS.
October 2002
5
Rev 1.000
stm32/stm8
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