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SMDJ13

Description
TVS Diode, 3000W, 14.40V, 17.60V, 13.0V, 2uA, 126.05A, 23.8V
CategoryDiscrete semiconductor    Transient suppression diode   
File Size2MB,4 Pages
ManufacturerLGE
Websitehttp://www.luguang.cn/web_en/index.html
Download Datasheet Parametric View All

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TVS Diode, 3000W, 14.40V, 17.60V, 13.0V, 2uA, 126.05A, 23.8V

SMDJ13 Parametric

Parameter NameAttribute value
Case StyleSMC
Ppk(W)3000
MIN_(V)14.40
MAX_(V)17.60
Vwm_(V)13.0
Ir_(uA)2
Ippm_(A)126.05
Vc_(V)23.8
classDiodes
Surface Mount
Transient Voltage Suppressors
SMDJ Series
Working Voltage: 5.0 to 440 V
Peak Pulse Power: 3000 W
Features
SMC/ DO-214AB
Glass passivated chip
3000 W peak pulse power capability with a
10/1000 μs waveform, repetitive rate (duty
cycle):0.01 %
Low leakage
Uni and Bidirectional unit
Excellent clamping capability
Very fast response time
RoHS compliant
Case: Molded plastic
Epoxy: UL 94V-0 rate flame retardant
Lead: Solderable per MIL-STD-750, method
2026
Polarity: Color band denotes cathode end
except Bipolar
Mounting position: Any
Mechanical Data
Maximum Ratings(T
A
=25℃ unless otherwise noted)
Parameter
Peak power dissipation with a 10/1000μs waveform
(1)
(1)
Peak pulse current wih a 10/1000μs waveform
Power dissipation on infinite heatsink at T
L
= 75 °C
Peak forward surge current, 8.3 ms single half sine-
(2)
wave unidirectional only
Maximum instantaneous forward voltage at 100A for
unidirectional only
(3)
Operating junction and storage temperature range
Note:
(1)Non-repetitive current pulse per Fig.5 and derated above T
A
= 25 °C per Fig.1
(2)Measured on 8.3 ms single half sine-wave or equivalent square wave, duty cycle = 4 pulses per minute maximum
(3)V
F
<3.5V for devices of V
BR
<200V and V
F
<5.0V for devices of V
BR
>201V
Value
Symbol
P
PP
3000
I
PP
See Next Table
P
D
6.5
I
FSM
V
F
T
J
, T
STG
300
3.5/5.0
55 to +150
UNIT
W
A
W
A
V
°C
ht
t
p
:
//
Revision:20170301-P1
www.lgesemi
.c
o
m
mail:lge@lgesemi.com

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