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UG06DB0G

Description
Rectifier Diode, 1 Element, 0.6A, 200V V(RRM), Silicon,
CategoryDiscrete semiconductor    diode   
File Size353KB,4 Pages
ManufacturerTaiwan Semiconductor
Websitehttp://www.taiwansemi.com/
Environmental Compliance
Download Datasheet Parametric View All

UG06DB0G Overview

Rectifier Diode, 1 Element, 0.6A, 200V V(RRM), Silicon,

UG06DB0G Parametric

Parameter NameAttribute value
Is it Rohs certified?conform to
MakerTaiwan Semiconductor
Reach Compliance Codecompliant
ECCN codeEAR99
Other featuresFREE WHEELING DIODE
Shell connectionISOLATED
ConfigurationSINGLE
Diode component materialsSILICON
Diode typeRECTIFIER DIODE
Maximum forward voltage (VF)0.95 V
JESD-30 codeO-PALF-W2
Maximum non-repetitive peak forward current40 A
Number of components1
Number of terminals2
Maximum operating temperature150 °C
Minimum operating temperature-55 °C
Maximum output current0.6 A
Package body materialPLASTIC/EPOXY
Package shapeROUND
Package formLONG FORM
Maximum repetitive peak reverse voltage200 V
Maximum reverse recovery time0.015 µs
surface mountNO
Terminal formWIRE
Terminal locationAXIAL
UG06A thru UG06D
Taiwan Semiconductor
CREAT BY ART
Glass Passivated Ultra Fast Rectifiers
FEATURES
- Glass passivated chip junction
- Ulterafast recovery time for high efficiency
- Excellent high temperature switching
- ldeally suited for use in very high frequency
switching power supplies, inverters and as free
wheeling diodes
- Compliant to RoHS Directive 2011/65/EU and
in accordance to WEEE 2002/96/EC
- Halogen-free according to IEC 61249-2-21 definition
MECHANICAL DATA
Case:
TS-1
Molding compound, UL flammability classification rating 94V-0
Base P/N with suffix "G" on packing code - green compound (halogen-free)
Terminal:
Matte tin plated leads, solderable per JESD22-B102
Meet JESD 201 class 1A whisker test
Weight:
0.2g (approximately)
TS-1
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
(T
A
=25
o
C unless otherwise noted)
PARAMETER
Maximum repetitive peak reverse voltage
Maximum RMS voltage
Maximum DC blocking voltage
Maximum average forward rectified current
Peak forward surge current, 8.3 ms single half sine-wave
superimposed on rated load
Maximum instantaneous forward voltage (Note 1)
@ 0.6 A
Maximum reverse current @ rated VR
T
J
=25
o
C
T
J
=125
o
C
Maximum reverse recovery time (Note 2)
Typical junction capacitance (Note 3)
Typical thermal resistance
Operating junction temperature range
Storage temperature range
Note 1: Pulse test with PW=300μs, 1% duty cycle
Note 2: Reverse Recovery Test Conditions: I
F
=0.5A, I
R
=1.0A, I
RR
=0.25A
Note 3: Measured at 1 MHz and Applied Reverse Voltage of 4.0V D.C.
SYMBOL
V
RRM
V
RMS
V
DC
I
F(AV)
I
FSM
V
F
I
R
Trr
Cj
R
θJL
R
θJA
T
J
T
STG
UG06A
50
25
50
UG06B
100
70
100
0.6
40
0.95
5
150
15
9
28
97
- 55 to +150
- 55 to +150
O
UG06C
150
105
150
UG06D
200
140
200
UNIT
V
V
V
A
A
V
μA
ns
pF
C/W
O
O
C
C
Document Number: DS_D1407024
Version: E14
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