BAP51LX
006
D-2
Silicon PIN diode
Rev. 2 — 6 August 2013
Product data sheet
1. Product profile
1.1 General description
Planar PIN diode in a SOD882D leadless ultra small plastic SMD package.
DF
N1
1.2 Features and benefits
High speed switching for RF signals
Low diode capacitance
Low forward resistance
Very low series inductance
For applications up to 3 GHz
1.3 Applications
RF attenuators and switches
2. Pinning information
Table 1.
Pin
1
2
Discrete pinning
Description
cathode
anode
[1]
Simplified outline
Symbol
1
2
Transparent
top view
sym006
[1]
The marking bar indicates the cathode.
3. Ordering information
Table 2.
Ordering information
Name
BAP51LX
Description
Version
SOD882D
Type number Package
DFN1006D-2 leadless ultra small plastic package; 2 terminals;
body 1
0.6
0.4 mm
NXP Semiconductors
BAP51LX
Silicon PIN diode
4. Marking
Table 3.
BAP51LX
[1]
Marking codes
Marking code
[1]
1001
0100
Type number
For SOD882D binary marking code description, see
Figure 1.
4.1 Binary marking code description
CATHODE BAR
READING DIRECTION
VENDOR CODE
READING EXAMPLE:
0111
1011
MARKING CODE
(EXAMPLE)
READING DIRECTION
006aac477
Fig 1.
SOD882D binary marking code description example
5. Limiting values
Table 4.
Limiting values
In accordance with the Absolute Maximum Rating System (IEC 60134).
Symbol
V
R
I
F
P
tot
T
stg
T
j
Parameter
reverse voltage
forward current
total power dissipation
storage temperature
junction temperature
T
sp
= 90
C
Conditions
Min
-
-
-
65
65
Max
60
100
140
+150
+150
Unit
V
mA
mW
C
C
6. Thermal characteristics
Table 5.
Symbol
R
th(j-sp)
Thermal characteristics
Parameter
thermal resistance from junction
to solder point
Conditions
Typ
66
Unit
K/W
BAP51LX
All information provided in this document is subject to legal disclaimers.
© NXP B.V. 2013. All rights reserved.
Product data sheet
Rev. 2 — 6 August 2013
2 of 9
NXP Semiconductors
BAP51LX
Silicon PIN diode
7. Characteristics
Table 6.
Characteristics
T
amb
= 25
C unless otherwise specified.
Symbol
V
F
I
R
C
d
Parameter
forward voltage
reverse current
diode capacitance
Conditions
I
F
= 50 mA
V
R
= 50 V
see
Figure 2;
f = 1 MHz;
V
R
= 0 V
V
R
= 1 V
V
R
= 5 V
r
D
diode forward resistance
see
Figure 3;
f = 100 MHz;
I
F
= 0.5 mA
I
F
= 1 mA
I
F
= 10 mA
I
F
= 100 mA
ISL
isolation
see
Figure 4;
V
R
= 0 V;
f = 900 MHz
f = 1800 MHz
f = 2450 MHz
L
ins
insertion loss
see
Figure 5;
I
F
= 0.5 mA;
f = 900 MHz
f = 1800 MHz
f = 2450 MHz
L
ins
insertion loss
see
Figure 5;
I
F
= 1 mA;
f = 900 MHz
f = 1800 MHz
f = 2450 MHz
L
ins
insertion loss
see
Figure 5;
I
F
= 10 mA;
f = 900 MHz
f = 1800 MHz
f = 2450 MHz
L
ins
insertion loss
see
Figure 5;
I
F
= 100 mA;
f = 900 MHz
f = 1800 MHz
f = 2450 MHz
L
charge carrier life time
when switched from I
F
= 10 mA to
I
R
= 6 mA; R
L
= 100
;
measured at
I
R
= 3 mA
I
F
= 100 mA; f = 100 MHz
-
-
-
-
0.09
0.10
0.12
0.55
-
-
-
-
dB
dB
dB
s
-
-
-
0.12
0.14
0.15
-
-
-
dB
dB
dB
-
-
-
0.25
0.26
0.27
-
-
-
dB
dB
dB
-
-
-
0.36
0.36
0.38
-
-
-
dB
dB
dB
-
-
-
19
15
13
-
-
-
dB
dB
dB
-
-
-
-
4.9
3.2
1.4
0.9
9
6.5
2.5
1.5
-
-
-
0.30
0.22
0.17
-
0.40
0.30
pF
pF
pF
Min
-
-
Typ
0.95
-
Max
1.1
100
Unit
V
nA
L
S
series inductance
-
0.4
-
nH
BAP51LX
All information provided in this document is subject to legal disclaimers.
© NXP B.V. 2013. All rights reserved.
Product data sheet
Rev. 2 — 6 August 2013
3 of 9
NXP Semiconductors
BAP51LX
Silicon PIN diode
400
C
d
(fF)
300
001aag633
10
2
r
D
(Ω)
10
001aag634
200
1
100
0
0
4
8
12
16
V
R
(V)
20
10
−1
10
−1
1
10
I
F
(mA)
10
2
f = 1 MHz; T
j
= 25
C.
f = 100 MHz; T
j
= 25
C.
Fig 2. Diode capacitance as a function of reverse
voltage; typical values
0
ISL
(dB)
−10
001aag635
Fig 3. Forward resistance as a function of forward
current; typical values
0
L
ins
(dB)
−0.2
(1)
(2)
(3)
001aag636
−0.4
−20
−0.6
−30
(4)
−0.8
−40
0
1000
2000
f (MHz)
3000
−1.0
0
1000
2000
f (MHz)
3000
T
amb
= 25
C
Diode zero biased and inserted in series with a 50
stripline circuit
T
amb
= 25
C
(1) I
F
= 100 mA
(2) I
F
= 10 mA
(3) I
F
= 1 mA
(4) I
F
= 0.5 mA
Diode inserted in series with a 50
stripline circuit and
biased via the analyzer Tee network
Fig 4. Isolation of the diode as a function of
frequency; typical values
Fig 5. Insertion loss of the diode as a function of
frequency; typical values
BAP51LX
All information provided in this document is subject to legal disclaimers.
© NXP B.V. 2013. All rights reserved.
Product data sheet
Rev. 2 — 6 August 2013
4 of 9
NXP Semiconductors
BAP51LX
Silicon PIN diode
8. Package outline
DFN1006D-2: Leadless ultra small plastic package; 2 terminals; body 1 x 0.6 x 0.4 mm
SOD882D
(2x)
L
1
(2x)
w
A
1
2
b
(2x)
(2x)
w
e
B
A
A
1
y
E
A
D
(2)
B
Dimensions
Unit
mm
max
nom
min
A
(1)
0.4
A
1
b
D
E
e
L
1
w
0.1
y
0.03
0
0.5
scale
1 mm
0.04 0.55 0.65 1.05
0.30
0.50 0.60 1.00 0.65 0.25
0.45 0.55 0.95
0.22
Note
1. Dimension including plating thickness.
2. The marking bar indicates the cathode (if applicable).
Outline
version
SOD882D
References
IEC
JEDEC
JEITA
European
projection
sod882d_po
Issue date
10-09-27
12-05-01
Fig 6. Package outline SOD882D (DFN1006D-2)
BAP51LX
All information provided in this document is subject to legal disclaimers.
© NXP B.V. 2013. All rights reserved.
Product data sheet
Rev. 2 — 6 August 2013
5 of 9
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