ZXTCM322
MPPS™ Miniature Package Power Solutions
50V NPN LOW SATURATION TRANSISTOR
SUMMARY
V
CEO
= 50V; R
SAT
= 68m ; I
C
= 4A
DESCRIPTION
Packaged in the innovative 2mm x 2mm MLP (Micro Leaded Package) outline,
this new 4
th
generation low saturation transistor offers extremely low on state
losses making it ideal for use in DC-DC circuits and various driving and power
management functions.
Additionally users will also gain several other
key benefits:
Performance capability equivalent to much larger packages
Improved circuit efficiency & power levels
Lower package height (nom 0.9mm)
PCB area and device placement savings
Reduced component count
2mm x 2mm MLP
(single die)
FEATURES
•
Low Equivalent On Resistance
•
Extremely Low Saturation Voltage
(100mV max @1A)
•
h
FE
specified up to 6A
•
I
C
= 4A Continuous Collector Current
•
2mm x 2mm MLP
APPLICATIONS
•
DC - DC Converters
•
Charging Circuits
•
Power switches
•
Motor control
PINOUT
ORDERING INFORMATION
DEVICE
ZXTCM322TA
ZXTCM322TC
REEL
7
13
TAPE
WIDTH
8mm
8mm
QUANTITY
PER REEL
3000
10000
2mm x 2mm Single MLP
underside view
DEVICE MARKING
SC
ISSUE 2 - JUNE 2002
1
ZXTCM322
ABSOLUTE MAXIMUM RATINGS.
PARAMETER
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Peak Pulse Current (c)
Continuous Collector Current (a)
Base Current
Power Dissipation at TA=25°C (a)
Linear Derating Factor
Power Dissipation at TA=25°C (b)
Linear Derating Factor
Power Dissipation at TA=25°C (d)
Linear Derating Factor
Power Dissipation at TA=25°C (e)
Linear Derating Factor
Operating and Storage Temperature Range
SYMBOL
V
CBO
V
CEO
V
EBO
I
CM
I
C
I
B
P
D
P
D
P
D
P
D
T
j
:T
stg
LIMIT
100
50
7.5
6
4
1000
1.5
12
2.45
19.6
1
8
3
24
-55 to +150
UNIT
V
V
V
A
A
mA
W
mW/°C
W
mW/°C
W
mW/°C
W
mW/°C
°C
THERMAL RESISTANCE
PARAMETER
Junction to Ambient (a)
Junction to Ambient (b)
Junction to Ambient (d)
Junction to Ambient (e)
SYMBOL
R
θJA
R
θJA
R
θJA
R
θJA
VALUE
83
51
125
42
UNIT
°C/W
°C/W
°C/W
°C/W
NOTES
(a) For a single device surface mounted on 10sq cm1oz copper on FR4 PCB in still air conditions
with all exposed pads attached.
(b) For a single device surface mounted on 10sq cm1oz copper on FR4 PCB in still air conditions measured at t 5 secs
with all exposed pads
attached.
(c) Repetitive rating - pulse width limited by max junction temperature. refer to Transient Thermal Impedance graph.
(d) For a single device surface mounted on 10sq cm1oz copper on FR4 PCB in still air conditions
with minimal lead connections only.
(e) For a single device surface mounted on 65sq cm2oz copper on FR4 PCB in still air conditions
with all exposed pads attached.
(f) The minimum copper dimensions requires for mounting are no smaller than the exposed metal pads on the base of the device, as shown in
the package dimensions data. The thermal resistance for a device mounted on 1.5mm thick FR4 board using minimum copper of 1oz weight and
1mm wide wide tracks is Rth=300 C giving a power rating of Ptot=420mW.
ISSUE 2 - JUNE 2002
2
ZXTCM322
TYPICAL CHARACTERISTICS
3.5
Max Power Dissipation (W)
I
C
Collector Current (A)
10
V
CE(SAT)
Limited
3.0
2.5
2oz Cu
2.0
Note: e
1.5
1.0
1oz Cu
0.5
0.0
0
25
50
75
Note: a
T
amb
=25°C
1
DC
1s
100ms
10ms
1ms
100us
0.1
0.01
0.1
Single Pulse, T
amb
=25°C
1
10
100
100
125
150
V
CE
Collector-Emitter Voltage (V)
Temperature (°C)
Safe Operating Area
Thermal Resistance (°C/W)
Thermal Resistance (°C/W)
80
60
D=0.5
Derating Curve
225
200
175
150
125
100
75
50
25
0
0.1
40
20
D=0.2
Single Pulse
D=0.05
D=0.1
1oz copper
2oz copper
0
100µ 1m
10m 100m
1
10
100
1k
1
10
100
Pulse Width (s)
Board Cu Area (sqcm)
Transient Thermal Impedance
3.5
3.0
T
amb
=25°C
T
j max
=150°C
Continuous
2oz copper
Thermal Resistance v Board Area
P
D
Dissipation (W)
2.5
2.0
1.5
1.0
0.5
0.0
0.1
1oz copper
1
10
100
Board Cu Area (sqcm)
Power Dissipation v Board Area
ISSUE 2 - JUNE 2002
3
ZXTCM322
ELECTRICAL CHARACTERISTICS
(at T
amb
= 25°C unless otherwise stated).
PARAMETER
Collector-Base Breakdown
Voltage
Collector-Emitter Breakdown
Voltage
Emitter-Base Breakdown Voltage
Collector Cut-Off Current
Emitter Cut-Off Current
Collector Emitter Cut-Off Current
Collector-Emitter Saturation
Voltage
SYMBOL
V
(BR)CBO
V
(BR)CEO
V
(BR)EBO
I
CBO
I
EBO
I
CES
V
CE(sat)
10
70
145
115
225
270
1.00
0.94
200
300
200
100
100
400
450
400
225
40
165
12
170
750
20
MHz
pF
ns
ns
MIN.
100
50
7.5
TYP.
190
65
8.2
25
25
25
20
100
200
220
300
320
1.05
1.00
MAX.
UNIT
V
V
V
nA
nA
nA
mV
mV
mV
mV
mV
mV
V
V
CONDITIONS.
I
C
=100 A
I
C
=10mA*
I
E
=100 A
V
CB
=80V
V
EB
=6V
V
CES
=40V
I
C
=0.1A, I
B
=10mA*
I
C
=1A, I
B
=50mA*
I
C
=1A, I
B
=10mA*
I
C
=2A, I
B
=50mA*
I
C
=3A, I
B
=100mA*
I
C
=4A, I
B
=200mA*
I
C
=4A, I
B
=200mA*
I
C
=4A, V
CE
=2V*
I
C
=10mA, V
CE
=2V*
I
C
=0.2A, V
CE
=2V*
I
C
=1A, V
CE
=2V*
I
C
=2A, V
CE
=2V*
I
C
=6A, V
CE
=2V*
I
C
=50mA, V
CE
=10V
f=100MHz
V
CB
=10V, f=1MHz
V
CC
=10V, I
C
=1A
I
B1
=I
B2
=10mA
Base-Emitter Saturation Voltage
Base-Emitter Turn-On Voltage
Static Forward Current Transfer
Ratio
V
BE(sat)
V
BE(on)
h
FE
Transition Frequency
Output Capacitance
Turn-On Time
Turn-Off Time
f
T
C
obo
t
(on)
t
(off)
*Measured under pulsed conditions. Pulse width=300µs. Duty cycle
≤
2%
ISSUE 2 - JUNE 2002
4
ZXTCM322
TYPICAL CHARACTERISTICS
0.25
Tamb=25°C
I
C
/I
B
=50
0.20
100m
V
CE(SAT)
(V)
V
CE(SAT)
(V)
I
C
/I
B
=100
0.15
0.10
0.05
100°C
25°C
-55°C
10m
I
C
/I
B
=50
I
C
/I
B
=10
1m
1m
I
C
Collector Current (A)
10m
100m
1
10
0.00
1m
V
CE(SAT)
v I
C
I
C
Collector Current (A)
10m
100m
1
10
V
CE(SAT)
v I
C
630
1.2
V
CE
=2V
100°C
25°C
1.0
I
C
/I
B
=50
540
450
360
270
Normalised Gain
1.0
0.8
0.6
0.4
0.2
0.0
1m
10m
100m
1
-55°C
Typical Gain (h
FE
)
0.8
V
BE(SAT)
(V)
-55°C
0.6
25°C
100°C
180
90
0
10
0.4
1m
I
C
Collector Current (A)
h
FE
v I
C
I
C
Collector Current (A)
10m
100m
1
10
V
BE(SAT)
v I
C
1.0
V
CE
=2V
0.8
V
BE(ON)
(V)
-55°C
0.6
25°C
0.4
1m
10m
100°C
I
C
Collector Current (A)
100m
1
10
V
BE(ON)
v I
C
ISSUE 2 - JUNE 2002
5
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