PRELIMINARY PRODUCT INFORMATION
MOS FIELD EFFECT TRANSISTOR
µ
PA2715GR
SWITCHING
P-CHANNEL POWER MOS FET
DESCRIPTION
The
µ
PA2715GR is P-Channel MOS Field Effect Transistor
designed for power management applications of notebook
computers and Li-ion battery protection circuit.
PACKAGE DRAWING (Unit: mm)
8
5
1, 2, 3
: Source
4
: Gate
5, 6, 7, 8 : Drain
FEATURES
•
Low on-state resistance
R
DS(on)1
= 4.5 mΩ MAX. (V
GS
= –10 V, I
D
= –9.0 A)
R
DS(on)2
= 8.0 mΩ MAX. (V
GS
= –4.5 V, I
D
= –9.0 A)
•
Low C
iss
: C
iss
= 5700 pF TYP.
★
•
Built-in gate protection diode
•
Small and surface mount package (Power SOP8)
1
4
5.37 MAX.
+0.10
–0.05
6.0 ±0.3
4.4
0.8
1.8 MAX.
1.44
0.15
ORDERING INFORMATION
PART NUMBER
PACKAGE
Power SOP8
0.05 MIN.
0.5 ±0.2
0.10
1.27 0.78 MAX.
0.40
+0.10
–0.05
0.12 M
µ
PA2715GR
ABSOLUTE MAXIMUM RATINGS (T
A
= 25°C, All terminals are connected.)
Drain to Source Voltage (V
GS
= 0 V)
Gate to Source Voltage (V
DS
= 0 V)
Drain Current (DC)
Drain Current (pulse)
Note1
Note2
Note3
V
DSS
V
GSS
I
D(DC)
I
D(pulse)
P
T1
P
T2
T
ch
T
stg
–30
m20
m18
m150
2
2
150
–55 to + 150
T.B.D.
T.B.D.
Note5
Note5
V
V
A
A
W
W
°C
°C
A
mJ
Gate
Protection
Diode
Source
Gate
Drain
★
EQUIVALENT CIRCUIT
Total Power Dissipation
Total Power Dissipation
Channel Temperature
Storage Temperature
Body
Diode
Single Avalanche Current
Single Avalanche Energy
Notes 1.
2.
3.
4.
5.
Note4
Note4
I
AS
E
AS
PW
≤
10
µ
s, Duty Cycle
≤
1%
Mounted on ceramic substrate of 1200 mm
2
x 2.2 mm
Mounted on a glass epoxy board of 1 inch x 1 inch x 0.8 mm, PW = 10 sec
Starting T
ch
= 25°C, V
DD
= –15 V, R
G
= 25
Ω,
L = 100
µ
H, V
GS
= –20
→
0 V
T.B.D.: To be determined.
★
Remark
The diode connected between the gate and source of the transistor serves as a protector against ESD. When
this device actually used, an additional protection circuit is externally required if a voltage exceeding the rated
voltage may be applied to this device.
The information contained in this document is being issued in advance of the production cycle for the
product. The parameters for the product may change before final production or NEC Electronics
Corporation, at its own discretion, may withdraw the product prior to its production.
Not all products and/or types are availabe in every country. Please check with an NEC Electronics
sales representative for availability and additional information.
Document No. G16826EJ2V0PM00 (2nd edition)
Date Published November 2003 NS CP(K)
Printed in Japan
The mark
★
shows major revised points.
2003
µ
PA2715GR
ELECTRICAL CHARACTERISTICS (T
A
= 25°C, All terminals are connected.)
CHARACTERISTICS
Zero Gate Voltage Drain Current
SYMBOL
I
DSS
I
GSS
V
GS(off)
Note
Note
TEST CONDITIONS
V
DS
=
–
30 V, V
GS
= 0 V
V
GS
=
m
20 V, V
DS
= 0 V
V
DS
=
–
10 V, I
D
=
–
1 mA
V
DS
=
–
10 V, I
D
=
–
9.0 A
V
GS
=
–
10 V, I
D
=
–
9.0 A
V
GS
=
–
4.5 V, I
D
=
–
9.0 A
V
GS
=
–
4.0 V, I
D
=
–
9.0 A
V
DS
=
–
10 V
V
GS
= 0 V
f = 1 MHz
V
DD
=
–
15 V, I
D
=
–
9.0 A
V
GS
=
–
10 V
R
G
= 10
Ω
MIN.
TYP.
MAX.
UNIT
–
1
m
10
–
1.0
T.B.D.
3.7
5.2
4.5
8.0
µ
A
µ
A
V
S
mΩ
mΩ
mΩ
pF
pF
pF
ns
ns
ns
ns
nC
nC
nC
V
ns
nC
★
Gate Leakage Current
Gate Cut-off Voltage
Forward Transfer Admittance
–
2.5
| y
fs
|
R
DS(on)1
R
DS(on)2
R
DS(on)3
Drain to Source On-state Resistance
T.B.D. T.B.D.
5700
1300
850
14
30
670
340
★
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Turn-on Delay Time
Rise Time
Turn-off Delay Time
Fall Time
Total Gate Charge
Gate to Source Charge
Gate to Drain Charge
Body Diode Forward Voltage
Reverse Recovery Time
Reverse Recovery Charge
Note
C
iss
C
oss
C
rss
t
d(on)
t
r
t
d(off)
t
f
Q
G
Q
GS
Q
GD
V
F(S-D)
t
rr
Q
rr
V
DD
=
–
24 V
V
GS
=
–
10 V
I
D
=
–
18 A
I
F
= 18 A, V
GS
= 0 V
I
F
= 18 A, V
GS
= 0 V
di/dt = 50 A/
µ
s
125
16
35
0.9
193
230
Note
Pulsed
TEST CIRCUIT 1 AVALANCHE CAPABILITY
D.U.T.
R
G
= 25
Ω
PG.
V
GS
=
−20 →
0 V
−
I
D
V
DD
50
Ω
L
V
DD
PG.
BV
DSS
V
DS
V
GS
(−)
0
τ
τ
= 1
µ
s
Duty Cycle
≤
1%
V
DS
Wave Form
TEST CIRCUIT 2 SWITCHING TIME
D.U.T.
R
L
R
G
V
DD
V
DS
(−)
90%
10% 10%
90%
V
GS
(−)
V
GS
Wave Form
0
10%
V
GS
90%
I
AS
V
DS
0
t
d(on)
t
on
t
r
t
d(off)
t
off
t
f
Starting T
ch
TEST CIRCUIT 3 GATE CHARGE
D.U.T.
I
G
=
−2
mA
50
Ω
R
L
V
DD
PG.
2
Preliminary Product Information G16826EJ2V0PM
µ
PA2715GR
•
The information contained in this document is being issued in advance of the production cycle for the
product. The parameters for the product may change before final production or NEC Electronics
Corporation, at its own discretion, may withdraw the product prior to its production.
•
No part of this document may be copied or reproduced in any form or by any means without the prior written consent
of NEC Electronics. NEC Electronics assumes no responsibility for any errors that may appear in this document.
•
NEC Electronics does not assume any liability for infringement of patents, copyrights or other intellectual property
rights of third parties by or arising from the use of NEC Electronics products listed in this document or any other
liability arising from the use of such products. No license, express, implied or otherwise, is granted under any
patents, copyrights or other intellectual property rights of NEC Electronics or others.
•
Descriptions of circuits, software and other related information in this document are provided for illustrative purposes
in semiconductor product operation and application examples. The incorporation of these circuits, software and
information in the design of a customer's equipment shall be done under the full responsibility of the customer. NEC
Electronics assumes no responsibility for any losses incurred by customers or third parties arising from the use of
these circuits, software and information.
•
While NEC Electronics endeavors to enhance the quality, reliability and safety of NEC Electronics products,
customers agree and acknowledge that the possibility of defects thereof cannot be eliminated entirely. To minimize
risks of damage to property or injury (including death) to persons arising from defects in NEC Electronics products,
customers must incorporate sufficient safety measures in their design, such as redundancy, fire-containment and
anti-failure features.
•
NEC Electronics products are classified into the following three quality grades: "Standard", "Special", and "Specific".
The "Specific" quality grade applies only to NEC Electronics products developed based on a customer-designated
"quality assurance program" for a specific application. The recommended applications of an NEC Electronics
product depend on its quality grade, as indicated below. Customers must check the quality grade of each NEC
Electronics products before using it in a particular application.
"Standard": Computers, office equipment, communications equipment, test and measurement equipment, audio and
visual equipment, home electronic appliances, machine tools, personal electronic equipment and
industrial robots.
"Special": Transportation equipment (automobiles, trains, ships, etc.), traffic control systems, anti-disaster
systems, anti-crime systems, safety equipment and medical equipment (not specifically designed for life
support).
"Specific": Aircraft, aerospace equipment, submersible repeaters, nuclear reactor control systems, life support
systems and medical equipment for life support, etc.
The quality grade of NEC Electronics products is "Standard" unless otherwise expressly specified in NEC
Electronics data sheets or data books, etc. If customers wish to use NEC Electronics products in applications
not intended by NEC Electronics, they must contact an NEC Electronics sales representative in advance to
determine NEC Electronics' willingness to support a given application.
(Note)
(1) "NEC Electronics" as used in this statement means NEC Electronics Corporation and also includes its
majority-owned subsidiaries.
(2) "NEC Electronics products" means any product developed or manufactured by or for NEC Electronics (as
defined above).
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