BC857xMB series
83B
45 V, 100 mA PNP general-purpose transistors
Rev. 1 — 21 February 2012
Product data sheet
1. Product profile
1.1 General description
PNP general-purpose transistors in a leadless ultra small SOT883B Surface-Mounted
Device (SMD) plastic package.
Table 1.
Product overview
Package
NXP
BC857AMB
BC857BMB
BC857CMB
SOT883B
SOT883B
SOT883B
JEITA
-
-
-
JEDEC
-
-
-
BC847AMB
BC847BMB
BC847CMB
NPN complement
SO
T8
Type number
1.2 Features and benefits
Leadless ultra small SMD plastic
package
Low package height of 0.37 mm
Power dissipation comparable to SOT23
AEC-Q101 qualified
1.3 Applications
General-purpose switching and amplification
Mobile applications
1.4 Quick reference data
Table 2.
Symbol
V
CEO
I
C
h
FE
Quick reference data
Parameter
collector-emitter voltage
collector current
DC current gain
BC857AMB
BC857BMB
BC857CMB
V
CE
=
5
V; I
C
=
2
mA
125
220
420
-
-
-
250
475
800
Conditions
open base
Min
-
-
Typ
-
-
Max
45
100
Unit
V
mA
NXP Semiconductors
BC857xMB series
45 V, 100 mA PNP general-purpose transistors
2. Pinning information
Table 3.
Pin
1
2
3
Pinning
Description
base
emitter
collector
1
3
2
Transparent
top view
1
2
sym013
Simplified outline
Graphic symbol
3
3. Ordering information
Table 4.
Ordering information
Package
Name
BC857xMB series -
Description
leadless ultra small plastic package; 3 solder lands;
body 1.0
0.6
0.37 mm
Version
SOT883B
Type number
4. Marking
Table 5.
Marking codes
Marking code
[1]
0100 0100
0100 0101
0100 0110
Type number
BC857AMB
BC857BMB
BC857CMB
[1]
For SOT883B binary marking code description, see
Figure 1.
4.1 Binary marking code description
PIN 1 INDICATION
READING DIRECTION
READING EXAMPLE:
0111
1011
MARKING CODE
(EXAMPLE)
READING DIRECTION
006aac673
Fig 1.
SOT883B binary marking code description
BC857XMB_SER
All information provided in this document is subject to legal disclaimers.
© NXP B.V. 2012. All rights reserved.
Product data sheet
Rev. 1 — 21 February 2012
2 of 14
NXP Semiconductors
BC857xMB series
45 V, 100 mA PNP general-purpose transistors
5. Limiting values
Table 6.
Limiting values
In accordance with the Absolute Maximum Rating System (IEC 60134).
Symbol
V
CBO
V
CEO
V
EBO
I
C
I
CM
I
BM
P
tot
T
j
T
amb
T
stg
[1]
[2]
Parameter
collector-base voltage
collector-emitter voltage
emitter-base voltage
collector current
peak collector current
peak base current
total power dissipation
junction temperature
ambient temperature
storage temperature
Conditions
open emitter
open base
open collector
single pulse;
t
p
1 ms
single pulse;
t
p
1 ms
T
amb
25
C
[1][2]
Min
-
-
-
-
-
-
-
-
55
65
Max
50
45
5
100
200
100
250
150
+150
+150
Unit
V
V
V
mA
mA
mA
mW
C
C
C
Device mounted on an FR4 Printed-Circuit Board (PCB), single-sided copper, tin-plated and standard
footprint.
Reflow soldering is the only recommended soldering method.
BC857XMB_SER
All information provided in this document is subject to legal disclaimers.
© NXP B.V. 2012. All rights reserved.
Product data sheet
Rev. 1 — 21 February 2012
3 of 14
NXP Semiconductors
BC857xMB series
45 V, 100 mA PNP general-purpose transistors
6. Thermal characteristics
Table 7.
Symbol
R
th(j-a)
[1]
[2]
Thermal characteristics
Parameter
thermal resistance from
junction to ambient
Conditions
in free air
[1][2]
Min
-
Typ
-
Max
500
Unit
K/W
Device mounted on an FR4 PCB, single-sided copper, tin-plated and standard footprint.
Reflow soldering is the only recommended soldering method.
10
3
duty cycle =
Z
th(j-a)
(K/W)
10
2
1
0.75
0.5
0.33
0.2
0.1
0.05
0.02
10
0.01
0
006aab603
1
10
−5
10
−4
10
−3
10
−2
10
−1
1
10
10
2
t
p
(s)
10
3
FR4 PCB, standard footprint
Fig 2.
Transient thermal impedance from junction to ambient as a function of pulse duration; typical values
BC857XMB_SER
All information provided in this document is subject to legal disclaimers.
© NXP B.V. 2012. All rights reserved.
Product data sheet
Rev. 1 — 21 February 2012
4 of 14
NXP Semiconductors
BC857xMB series
45 V, 100 mA PNP general-purpose transistors
7. Characteristics
Table 8.
Characteristics
T
amb
= 25
C unless otherwise specified.
Symbol Parameter
I
CBO
collector-base
cut-off current
emitter-base
cut-off current
DC current gain
BC857AMB
BC857BMB
BC857CMB
V
CEsat
V
BE
f
T
C
c
NF
collector-emitter
saturation voltage
base-emitter voltage
transition frequency
collector capacitance
noise figure
I
C
=
10
mA; I
B
=
0.5
mA
I
C
=
100
mA; I
B
=
5
mA
I
C
=
2
mA; V
CE
=
5
V
I
C
=
10
mA; V
CE
=
5
V
V
CE
=
5
V; I
C
=
10
mA;
f = 100 MHz
V
CB
=
10
V; I
E
= i
e
= 0 A;
f = 1 MHz
I
C
=
200 A;
V
CE
=
5
V;
R
S
= 2 k; f = 1 kHz;
B = 200 Hz
[1]
Conditions
V
CB
=
30
V; I
E
= 0 A
V
CB
=
30
V; I
E
= 0 A;
T
j
= 150
C
V
EB
=
5
V; I
C
= 0 A
V
CE
=
5
V; I
C
=
2
mA
Min
-
-
-
Typ
-
-
-
Max
15
5
100
Unit
nA
A
nA
I
EBO
h
FE
125
220
420
-
-
600
-
100
-
-
-
-
-
-
-
-
-
-
-
-
250
475
800
200
400
750
820
-
2.5
10
mV
mV
mV
mV
MHz
pF
dB
[1]
Pulse test: t
p
300
s;
0.02.
BC857XMB_SER
All information provided in this document is subject to legal disclaimers.
© NXP B.V. 2012. All rights reserved.
Product data sheet
Rev. 1 — 21 February 2012
5 of 14
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