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BZT55B33-GS18

Description
Zener Diode, 33V V(Z), 2%, 0.5W,
CategoryDiscrete semiconductor    diode   
File Size86KB,6 Pages
ManufacturerVishay Telefunken (Vishay)
Websitehttp://www.vishay.com
Download Datasheet Parametric View All

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BZT55B33-GS18 Overview

Zener Diode, 33V V(Z), 2%, 0.5W,

BZT55B33-GS18 Parametric

Parameter NameAttribute value
Is it Rohs certified?incompatible
MakerVishay Telefunken (Vishay)
Reach Compliance Codeunknown
ConfigurationSINGLE
Diode typeZENER DIODE
Maximum dynamic impedance80 Ω
JESD-609 codee0
Number of components1
Maximum operating temperature175 °C
Maximum power dissipation0.5 W
Nominal reference voltage33 V
surface mountYES
Terminal surfaceTin/Lead (Sn/Pb)
Maximum voltage tolerance2%
Working test current5 mA
BZT55C...
Vishay Telefunken
Silicon Epitaxial Planar Z–Diodes
Features
D
D
D
D
D
Very sharp reverse characteristic
Low reverse current level
Very high stability
Low noise
Available with tighter tolerances
96 12009
Applications
Voltage stabilization
Order Instruction
Type
BZT55C2V4
Ordering Code
BZT55C2V4–GS08
BZT55C2V4–GS18
Remarks
Tape and Reel (2.500 pcs)
Tape and Reel (10.000 pcs)
Absolute Maximum Ratings
T
j
= 25
_
C
Parameter
Power dissipation
Z–current
Junction temperature
Storage temperature range
Test Conditions
R
thJA
300K/W
x
Type
Symbol
P
V
I
Z
T
j
T
stg
Value
500
P
V
/V
Z
175
–65...+175
Unit
mW
mA
°
C
°
C
Maximum Thermal Resistance
T
j
= 25
_
C
Parameter
Junction ambient
Test Conditions
on PC board 50 mmx50 mmx1.6 mm
Symbol
R
thJA
Value
500
Unit
K/W
Electrical Characteristics
T
j
= 25
_
C
Parameter
Forward voltage
Test Conditions
I
F
=200mA
Type
Symbol
V
F
Min
Typ
Max
1.5
Unit
V
Document Number 85601
Rev. 4, 12-Mar-01
www.vishay.com
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