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S23DH12A0

Description
Silicon Controlled Rectifier, 370A I(T)RMS, 200000mA I(T), 1200V V(DRM), 1200V V(RRM), 1 Element, TO-209AB
CategoryAnalog mixed-signal IC    Trigger device   
File Size203KB,5 Pages
ManufacturerInternational Rectifier ( Infineon )
Websitehttp://www.irf.com/
Download Datasheet Parametric View All

S23DH12A0 Overview

Silicon Controlled Rectifier, 370A I(T)RMS, 200000mA I(T), 1200V V(DRM), 1200V V(RRM), 1 Element, TO-209AB

S23DH12A0 Parametric

Parameter NameAttribute value
Is it lead-free?Contains lead
Is it Rohs certified?incompatible
MakerInternational Rectifier ( Infineon )
package instructionPOST/STUD MOUNT, O-MUPM-H3
Reach Compliance Codecompliant
Nominal circuit commutation break time110 µs
ConfigurationSINGLE
Critical rise rate of minimum off-state voltage500 V/us
Maximum DC gate trigger current150 mA
Maximum DC gate trigger voltage2.5 V
Maximum holding current500 mA
JEDEC-95 codeTO-209AB
JESD-30 codeO-MUPM-H3
JESD-609 codee0
Maximum leakage current75 mA
On-state non-repetitive peak current6600 A
Number of components1
Number of terminals3
Maximum on-state current200000 A
Maximum operating temperature125 °C
Minimum operating temperature-40 °C
Package body materialMETAL
Package shapeROUND
Package formPOST/STUD MOUNT
Peak Reflow Temperature (Celsius)NOT SPECIFIED
Certification statusNot Qualified
Maximum rms on-state current370 A
Off-state repetitive peak voltage1200 V
Repeated peak reverse voltage1200 V
surface mountNO
Terminal surfaceTIN LEAD
Terminal formHIGH CURRENT CABLE
Terminal locationUPPER
Maximum time at peak reflow temperatureNOT SPECIFIED
Trigger device typeSCR
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