DRD1100F48
Rectifier Diode
DS5981 – 1 January 2011 (LN28002)
FEATURES
Double Side Cooling
High Surge Capability
KEY PARAMETERS
V
RRM
I
F(AV)
I
FSM
4800V
1105A
20500A
VOLTAGE RATINGS
Part and
Ordering
Number
Repetitive Peak
Voltages
V
RRM
V
4800
4600
4400
4000
Conditions
DRD1100F48
DRD1100F46
DRD1100F44
DRD1100F40
V
RSM
= V
RRM
+100V
(See Package Details for further information)
Fig. 1 Package outline
ORDERING INFORMATION
When ordering, select the required part number
shown in the Voltage Ratings selection table.
For example:
DRD1100F46
for a 4600V device
1/7
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DRD1100F48
CURRENT RATINGS
T
case
= 75°C unless stated otherwise
Symbol
Double Side Cooled
I
F(AV)
I
F(RMS)
I
F
Parameter
Test Conditions
Max.
Units
Mean forward current
RMS value
Continuous (direct) on-state current
Half wave resistive load
-
-
1428
2242
2082
A
A
A
Single Side Cooled (Anode side)
I
F(AV)
I
F(RMS)
I
F
Mean forward current
RMS value
Continuous (direct) on-state current
Half wave resistive load
-
-
1033
1622
1424
A
A
A
T
case
= 100°C unless stated otherwise
Symbol
Double Side Cooled
I
F(AV)
I
F(RMS)
I
F
Parameter
Test Conditions
Max.
Units
Mean forward current
RMS value
Continuous (direct) on-state current
Half wave resistive load
-
-
1105
1735
1580
A
A
A
Single Side Cooled (Anode side)
I
F(AV)
I
F(RMS)
I
F
Mean forward current
RMS value
Continuous (direct) on-state current
Half wave resistive load
-
-
730
1145
960
A
A
A
2/7
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DRD1100F48
-3-
SURGE RATINGS
Symbol
I
FSM
It
I
FSM
It
2
2
Parameter
Surge (non-repetitive) on-state current
I t for fusing
Surge (non-repetitive) on-state current
I t for fusing
2
2
Test Conditions
10ms half sine, T
case
= 150°C
V
R
= 50% V
RRM
- ¼ sine
10ms half sine, T
case
= 150°C
V
R
= 0
Max.
16.5
1.35
20.5
2.125
Units
kA
MA s
kA
MA s
2
2
THERMAL AND MECHANICAL RATINGS
Symbol
R
th(j-c)
Parameter
Thermal resistance – junction to case
Test Conditions
Double side cooled
Single side cooled
DC
Anode DC
Cathode DC
R
th(c-h)
Thermal resistance – case to heatsink
Clamping force 19.5kN
(with mounting compound)
T
vj
Virtual junction temperature
On-state (conducting)
Reverse (blocking)
T
stg
F
m
Storage temperature range
Clamping force
Double side
Single side
Min.
-
-
-
-
-
-
-
-55
18
Max.
0.022
0.038
0.052
0.004
0.008
160
150
175
22
Units
°C/W
°C/W
°C/W
°C/W
°C/W
°C
°C
°C
kN
3/7
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DRD1100F48
CHARACTERISTICS
Symbol
V
FM
I
RM
Q
S
I
rr
V
TO
r
T
Parameter
Forward voltage
Peak reverse current
Total stored charge
Peak reverse recovery current
Threshold voltage
Slope resistance
Test Conditions
At 3400A peak, T
case
= 25°C
At V
RRM,
T
case
= 150°C
I
F
= 2000A, dI
RR
/dt =3A/µs
T
case
= 150°C, V
R
=100V
At T
vj
= 150°C
At T
vj
= 150°C
Min.
-
-
-
-
-
-
Max.
1.8
75
4000
115
0.84
0.383
Units
V
mA
µC
A
V
m
CURVES
Fig.2 Maximum & minimum on-state characteristics
Fig.3 Dissipation curves
V
TM
EQUATION
V
TM
= A + Bln (I
T
) + C.I
T
+D.I
T
Where
A = 0.290476
B = 0.06449
C = 0.000335
D = 0.00408
these values are valid for T
j
= 150°C for I
F
500A to 5000A
4/7
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DRD1100F48
-5-
Fig.4 Total stored charge
Fig.5 Surge (non-repetitive) forward current vs time (with
50% V
RRM
at T
case
150°C)
Fig.6 Maximum (limit) transient thermal impedance-
junction to case
5/7
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