DRD2000L45
Rectifier Diode
DS5979 – 2 January 2014 (LN31197)
KEY PARAMETERS
FEATURES
Double Side Cooling
High Surge Capability
V
RRM
I
F(AV)
I
FSM
4500V
2000A
31000A
VOLTAGE RATINGS
Part and
Ordering
Number
Repetitive Peak
Voltages
V
RRM
V
4500
4400
4200
4000
Conditions
DRD2000L45
DRD2000L44
DRD2000L42
DRD2000L40
V
RSM
= V
RRM
+100V
Outline type code: L
(See Package Details for further information)
Fig. 1 Package outline
ORDERING INFORMATION
When ordering, select the required part number
shown in the Voltage Ratings selection table.
For example:
DRD2000L42
for a 4200V device
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DRD2000L45
CURRENT RATINGS
T
case
= 75°C unless stated otherwise
Symbol
Double Side Cooled
I
F(AV)
I
F(RMS)
I
F
Parameter
Test Conditions
Max.
Units
Mean forward current
RMS value
Continuous (direct) on-state current
Half wave resistive load
-
-
2590
4068
3727
A
A
A
Single Side Cooled (Anode side)
I
F(AV)
I
F(RMS)
I
F
Mean forward current
RMS value
Continuous (direct) on-state current
Half wave resistive load
-
-
1940
3047
2656
A
A
A
T
case
= 100°C unless stated otherwise
Symbol
Double Side Cooled
I
F(AV)
I
F(RMS)
I
F
Parameter
Test Conditions
Max.
Units
Mean forward current
RMS value
Continuous (direct) on-state current
Half wave resistive load
-
-
2000
3140
2800
A
A
A
Single Side Cooled (Anode side)
I
F(AV)
I
F(RMS)
I
F
Mean forward current
RMS value
Continuous (direct) on-state current
Half wave resistive load
-
-
1284
2017
1715
A
A
A
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DRD200L45
-3-
SURGE RATINGS
Symbol
I
FSM
It
I
FSM
It
2
2
Parameter
Surge (non-repetitive) on-state current
I t for fusing
Surge (non-repetitive) on-state current
I t for fusing
2
2
Test Conditions
10ms half sine, T
case
= 150°C
V
R
= 50% V
RRM
- ¼ sine
10ms half sine, T
case
= 150°C
V
R
= 0
Max.
24.8
3.075
31.0
4.8
Units
kA
MA s
kA
MA s
2
2
THERMAL AND MECHANICAL RATINGS
Symbol
R
th(j-c)
Parameter
Thermal resistance – junction to case
Test Conditions
Double side cooled
Single side cooled
DC
Anode DC
Cathode DC
R
th(c-h)
Thermal resistance – case to heatsink
Clamping force 45kN
(with mounting compound)
T
vj
Virtual junction temperature
On-state (conducting)
Reverse (blocking)
T
stg
F
m
Storage temperature range
Clamping force
Double side
Single side
Min.
-
-
-
-
-
-
-
-55
40
Max.
0.013
0.025
0.027
0.003
0.006
160
150
175
48
Units
°C/W
°C/W
°C/W
°C/W
°C/W
°C
°C
°C
kN
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DRD2000L45
CHARACTERISTICS
Symbol
V
FM
I
RM
Q
S
I
rr
V
TO
r
T
Parameter
Forward voltage
Peak reverse current
Total stored charge
Peak reverse recovery current
Threshold voltage
Slope resistance
Test Conditions
At 3000A peak, T
case
= 25°C
At V
RRM,
T
case
= 150°C
I
F
= 1500A, dI
RR
/dt =25A/µs
T
case
= 25°C, V
R
=100V
At T
vj
= 150°C
At T
vj
= 150°C
Min.
-
-
-
-
-
-
Max.
1.45
150
6000
500
0.84
0.19
Units
V
mA
µC
A
V
m
CURVES
Fig.2 Maximum (limit) on-state characteristics
Fig.3 Dissipation curves
V
TM
EQUATION
V
TM
= A + Bln (I
T
) + C.I
T
+D.I
T
A = -0.36984
B = 0.292197
C = 0.000354
D = -0.03111
these values are valid for T
j
= 150°C for I
F
500A to 10000A
Where
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DRD200L45
-5-
Fig.4 Surge (non-repetitive) forward current vs time
(T
case
150°C)
Fig.5 Maximum (limit) transient thermal impedance-
junction to case
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