DRD2960Y40
Rectifier Diode
DS5983-2 June 13 (LN30617)
FEATURES
Double Side Cooling
High Surge Capability
KEY PARAMETERS
V
RRM
I
F(AV)
I
FSM
4000V
2956A
62500A
APPLICATIONS
Rectification
Free-wheel Diode
DC Motor Control
Power Supplies
Welding
Battery Chargers
VOLTAGE RATINGS
Part and
Ordering
Number
Repetitive Peak
Voltages
V
RRM
V
4000
3900
3800
3700
3600
3500
Conditions
DRD2960Y40
DRD2960Y39
DRD2960Y38
DRD2960Y37
DRD2960Y36
DRD2960Y35
V
RSM
= V
RRM
+100V
Lower voltage grades available.
ORDERING INFORMATION
(See Package Details for further information)
When ordering, select the required part number
shown in the Voltage Ratings selection table.
For example:
DRD2960Y37
for a 3700V device in a Y outline
Fig. 1 Package outlines
Note: Please use the complete part number when ordering
and quote this number in any future correspondence
relating to your order.
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DRD2960Y40
SEMICONDUCTOR
CURRENT RATINGS
T
case
= 75°C unless stated otherwise
Symbol
Double Side Cooled
I
F(AV)
I
F(RMS)
I
F
Parameter
Test Conditions
Max.
Units
Mean forward current
RMS value
Continuous (direct) on-state current
Half wave resistive load
-
-
3830
6016
5597
A
A
A
Single Side Cooled (Anode side)
I
F(AV)
I
F(RMS)
I
F
Mean forward current
RMS value
Continuous (direct) on-state current
Half wave resistive load
-
-
2525
3966
3421
A
A
A
T
case
= 100°C unless stated otherwise
Symbol
Double Side Cooled
I
F(AV)
I
F(RMS)
I
F
Parameter
Test Conditions
Max.
Units
Mean forward current
RMS value
Continuous (direct) on-state current
Half wave resistive load
-
-
2956
4643
4218
A
A
A
Single Side Cooled (Anode side)
I
F(AV)
I
F(RMS)
I
F
Mean forward current
RMS value
Continuous (direct) on-state current
Half wave resistive load
-
-
1913
3005
2514
A
A
A
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DRD2960Y40
-3-
SEMICONDUCTOR
SURGE RATINGS
Symbol
I
FSM
It
I
FSM
It
2
2
Parameter
Surge (non-repetitive) on-state current
I t for fusing
Surge (non-repetitive) on-state current
I t for fusing
2
2
Test Conditions
10ms half sine, T
case
= 150°C
V
R
= 50% V
RRM
- ¼ sine
10ms half sine, T
case
= 150°C
V
R
= 0
Max.
50.0
12.5
62.5
19.6
Units
kA
MA s
kA
MA s
2
2
THERMAL AND MECHANICAL RATINGS
Symbol
R
th(j-c)
Parameter
Thermal resistance – junction to case
Test Conditions
Double side cooled
Single side cooled
DC
Anode DC
Cathode DC
R
th(c-h)
Thermal resistance – case to heatsink
Clamping force 43kN
(with mounting compound)
T
vj
Virtual junction temperature
On-state (conducting)
Reverse (blocking)
T
stg
F
m
Storage temperature range
Clamping force
Double side
Single side
Min.
-
-
-
-
-
-
-
-55
38.0
Max.
0.0095
0.019
0.019
0.002
0.004
160
150
150
47.0
Units
°C/W
°C/W
°C/W
°C/W
°C/W
°C
°C
°C
kN
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DRD2960Y40
SEMICONDUCTOR
CHARACTERISTICS
Symbol
V
FM
I
RM
Q
S
I
rr
V
TO
r
T
Parameter
Forward voltage
Peak reverse current
Total stored charge
Peak reverse recovery current
Threshold voltage
Slope resistance
Test Conditions
At 3000A peak, T
case
= 25°C
At V
DRM,
T
case
= 150°C
I
F
= 2000A, dI
RR
/dt =3A/µs
T
case
= 150°C, V
R
=100V
At T
vj
= 150°C
At T
vj
= 150°C
Min.
-
-
-
-
-
-
Max.
1.15
250
5000
150
0.75
0.118
Units
V
mA
µC
A
V
m
CURVES
10000
8000
Mean Power Dissipation - (W)
6000
4000
dc
1/2 wave
2000
3 phase sq.
6 phase sq.
0
0
2000
4000
6000
8000
Mean forward current I
F(AV)
- (A)
Fig.2 Maximum (limit) on-state characteristics
Fig.3 Dissipation curves
V
TM
EQUATION
V
TM
= A + Bln (I
T
) + C.I
T
+D.I
T
A = - 0.15357
B = 0.177571
C = 0.000179
D = - 0.01294
these values are valid for T
j
= 150°C for I
F
500A to 5000A
Where
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DRD2960Y40
-5-
SEMICONDUCTOR
Fig.4 Total stored charge
Fig.5 Maximum reverse recovery current
Fig.6 Surge (non-repetitive) forward current vs time
(with 50% V
RRM
at T
case
150°C)
Fig.7 Maximum (limit) transient thermal impedance-
junction to case
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