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MBRF20045

Description
Rectifier Diode, Schottky, 1 Phase, 200A, 45V V(RRM), Silicon
CategoryDiscrete semiconductor    diode   
File Size897KB,2 Pages
ManufacturerDaco Semiconductor Co., Ltd.
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MBRF20045 Overview

Rectifier Diode, Schottky, 1 Phase, 200A, 45V V(RRM), Silicon

MBRF20045 Parametric

Parameter NameAttribute value
MakerDaco Semiconductor Co., Ltd.
package instructionR-XUFM-X2
Reach Compliance Codeunknown
applicationGENERAL PURPOSE
Diode component materialsSILICON
Diode typeRECTIFIER DIODE
Maximum forward voltage (VF)0.7 V
JESD-30 codeR-XUFM-X2
Maximum non-repetitive peak forward current1500 A
Phase1
Number of terminals2
Maximum operating temperature150 °C
Minimum operating temperature-55 °C
Maximum output current200 A
Package body materialUNSPECIFIED
Package shapeRECTANGULAR
Package formFLANGE MOUNT
Maximum repetitive peak reverse voltage45 V
Maximum reverse current1000 µA
surface mountNO
technologySCHOTTKY
Terminal formUNSPECIFIED
Terminal locationUPPER

MBRF20045 Preview

MBRF20020(R)
DACO SEMICONDUCTOR CO., LTD.
Features
High Surge Capability
TH RU
MBR F200
100(R)
SCHOTTKY DIODE MODULE TYPES 200A
Types Up to 100V V
RRM
200 Amp Recti er
20-100 Volts
FULL PACKAGE
A
B
Maximum Ratings
Part Number
MBRF20020(R)
MBRF20030(R)
MBRF20035(R)
MBRF20040(R)
MBRF20045(R)
K
Operating Temperature: -55 C to +150
Storage Temperature: -55 C to +150
Maximum
Recurrent
Maximum
Peak Reverse RMS Voltage
Voltage
20V
14V
30V
35V
40V
45V
60V
80V
100V
21V
25V
28V
32V
42V
57V
70V
Maximum DC
Blocking
Voltage
20V
30V
35V
40V
45V
60V
80V
100V
NAME
PLATE
C
M
J
F
L
MBR
F200
60(R)
MBR
F200
80(R)
MBR
F200
100(R)
H
G
E
Electrical Characteristics
@
25
Average Forward
Current
(Per pkg)
Peak Forward Surge
Current
(Per leg)
Unless Otherwise Specified
200A
1500A
0.70V
I
F(AV)
I
FSM
V
F
TC =125
DIM
Min
A
B
3.144
1.565
0.700
0.119
1.358
3.55
0.604
Inches
Max
NOM
1.585
0.800
0.14
REF.
3.65
0.65
Min
79.85
39.75
17.78
3.02
34.50
90.17
15.35
Millimeters
Max
NOM
40.26
20.32
3.50
REF.
92.71
16.51
8.3ms , half sine
I
FM
=100 A; T =25
J
Maximum
20V~45V
Instantaneous
50V~60V
Forward Voltage
(Per leg)
80V~100V
0.75V
0.84V
1mA
10mA
30mA
0.45
/W
C
E
Maximum
Instantaneous
Reverse Current At
Rated DC Blocking
Voltage
(Per leg)
Maximum Thermal
Resistance Junction
To Case
(Per leg)
I
R
TJ = 25
TJ = 100
TJ = 150
F
G
H
J
K
L
M
R jc
1/4-20 UNC FULL
0.380
0.185
0.275
0.410
0.195
0.295
9.65
4.70
6.99
10.41
4.95
7.49
NOTE :
(1)
s e T es t: Pul s e W idth 300 usec, Duty C ycle
<
2%
Pul
www.dacosemi.com.tw
-1-
DACO SEMICONDUCTOR CO.,LTD.
180
Fi gure .1-
Typical Forward Characteristics
MBRF20020(R) THRU MBRF200100(R)
Figure .2- Forward Derating Curve
120
100
80
60
40
20
I ns tantaneous Forward Current
- Ampere
Per leg
Amp
100
MBRF20020
MBRF20030
MBRF20035
MBRF20040
MBRF20045
MBRF20060
T
J
=25
Average Forward Rectifer Current - Ampere
Amp
Per leg
20
10
6.0
4.0
2.0
1.0
MBRF
20
080
MBRF
20
0100
Single Phase, Half Wave
60Hz Resistive or Inductive Load
0
30
60
90
120
150
180
Case Temperature -
0
0.2
Volts
Instantaneous Forward Voltage-Volts
0.4
0.6
0.8
1.0
1.2
100
60
40
20
10
6
4
2
Fi gure .4-
Typical Reverse Characteristics
Instantaneous R everse
Leakage
C urrent -
m
A
1800
1500
1200
900
600
300
0
1
Figure .3- Peak Forward Surge Current
T j =150 C
Peak Forward Surge Current -Ampere
Amp
Per leg
m
A
1
0.6
0.4
0.2
0.1
T j =100 C
T
J
=25
.06
.04
.02
.01
20
30
40
50
60
70
80
90
100
2
4
6
8 10
Cyc les
20
40
60 80 100
Number Of Cycles At 60Hz - Cycles
Vo lts
Reverse V oltage - V olts(%)
www.dacosemi.com.tw
-2-
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