DRD560G90
Rectifier Diode
Preliminary Information
DS6066 – 12 December 2011 (LN28906)
KEY PARAMETERS
FEATURES
Double Side Cooling
High Surge Capability
V
RRM
I
F(AV)
I
FSM
9000V
557A
10000A
VOLTAGE RATINGS
Part and
Ordering
Number
Repetitive Peak
Voltages
V
RRM
V
9000
8500
8000
Conditions
DRD590G90
DRD590G85
DRD590G80
V
RSM
= V
RRM
+100V
(See Package Details for further information)
ORDERING INFORMATION
Fig. 1 Package outline
When ordering, select the required part number
shown in the Voltage Ratings selection table.
For example:
DRD590G85
for a 8500V device
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DRD560G90
CURRENT RATINGS
T
case
= 75°C unless stated otherwise
Symbol
Double Side Cooled
I
F(AV)
I
F(RMS)
I
F
Parameter
Test Conditions
Max.
Units
Mean forward current
RMS value
Continuous (direct) on-state current
Half wave resistive load
-
-
684
1074
1019
A
A
A
Single Side Cooled (Anode side)
I
F(AV)
I
F(RMS)
I
F
Mean forward current
RMS value
Continuous (direct) on-state current
Half wave resistive load
-
-
461
724
654
A
A
A
T
case
= 100°C unless stated otherwise
Symbol
Double Side Cooled
I
F(AV)
I
F(RMS)
I
F
Parameter
Test Conditions
Max.
Units
Mean forward current
RMS value
Continuous (direct) on-state current
Half wave resistive load
-
-
557
876
819
A
A
A
Single Side Cooled (Anode side)
I
F(AV)
I
F(RMS)
I
F
Mean forward current
RMS value
Continuous (direct) on-state current
Half wave resistive load
-
-
372
584
517
A
A
A
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DRD560G90
-3-
SURGE RATINGS
Symbol
I
FSM
It
I
FSM
It
2
2
Parameter
Surge (non-repetitive) on-state current
I t for fusing
Surge (non-repetitive) on-state current
I t for fusing
2
2
Test Conditions
10ms half sine, T
case
= 150°C
V
R
= 50% V
RRM
- ¼ sine
10ms half sine, T
case
= 150°C
V
R
= 0
Max.
8
0.32
10
0.5
Units
kA
MA s
kA
MA s
2
2
THERMAL AND MECHANICAL RATINGS
Symbol
R
th(j-c)
Parameter
Thermal resistance – junction to case
Test Conditions
Double side cooled
Single side cooled
DC
Anode DC
Cathode DC
R
th(c-h)
Thermal resistance – case to heatsink
Clamping force 43kN
(with mounting compound)
T
vj
T
stg
F
m
Virtual junction temperature
Storage temperature range
Clamping force
Double side
Single side
Min.
-
-
-
-
-
-
-55
11
Max.
0.032
0.064
0.064
.008
.016
160
175
13
Units
°C/W
°C/W
°C/W
°C/W
°C/W
°C
°C
kN
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DRD560G90
CHARACTERISTICS
Symbol
V
FM
I
RM
Q
S
I
rr
V
TO
r
T
Parameter
Forward voltage
Peak reverse current
Total stored charge
Peak reverse recovery current
Threshold voltage
Slope resistance
Test Conditions
At 1200A peak, T
case
= 160°C
At V
DRM,
T
case
= 160°C
I
F
= 2000A, dI
RR
/dt =5A/µs
T
case
= 160°C, V
R
=100V
At T
vj
= 160°C
At T
vj
= 160°C
Min.
-
-
3300
140
-
-
Max.
2.95
100
5000
170
1.0
1.575
Units
V
mA
µC
A
V
m
CURVES
2500
2000
Instantaneous forward current, IF - (A)
1500
1000
Vfm max 125ºC
Vfm min 125ºC
Vfm max 25ºC
500
Vfm min 25ºC
Vfm max 160ºC
Vfm min 160ºC
0
0
1
2
3
4
Instantaneous forward voltage, VF - (V)
5
Fig.2 Maximum & minimum on-state characteristics
Fig.3 Dissipation curves
V
TM
EQUATION
V
TM
= A + Bln (I
T
) + C.I
T
+D.I
T
A = -0.675901
B = 0.3995
C = 0.001796
D = -0.040301
these values are valid for T
j
= 160°C for I
F
200A to 2000A
Where
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DRD560G90
-5-
7000
300
6000
Q
S max
= 3042.075*(di/dt)
0.2158
250
I
RRmax
= 43.406*(di/dt)
0.5929
5000
Reverse recovery current, I RR - (A)
200
Q
S min
= 2007.773*(di/dt)
0.2158
Stored Charge QS - (uC)
4000
150
3000
I
RRmin
= 35.76*(di/dt)
0.5929
100
2000
Conditions:
T
j
= 160ºC
I
F
= 1000A, t
p
= 1000us , V
R
= -100V
1000
50
Conditions:
T
j
= 160ºC
I
F
= 1000A, t
p
= 1000us , V
R
= -100V
0
0
5
10
15
20
Rate of decay of forward current dIF/dt - (A/us)
25
0
0
5
10
15
20
Rate of decay of forward current dIF/dt - (A/us)
25
Fig.4 Total stored charge
Fig.5 Maximum reverse recovery current
Fig.6 Maximum (limit) transient thermal impedance-
junction to case
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