DSF21545SV
DSF21545SV
Fast Recovery Diode
Replaces January 2000 version, DS4153-4.0
DS4153-5.0 June 2004
APPLICATIONS
I
The DSF21545SV is a purpose designed freewheel
diode to complement the DG858BW GTO in inverter
circuits, using energy recovery snubbers.
FEATURES
I
The DSF21545SV is designed for fast turn-on thus
minimising reverse current through the GTO.
I
Low recovered charge for low losses.
I
DSF21545SV is housed in a similar outline to that of the
DG858BW therefore offering complete mechanical
compatibility for parallel and series clamping.
KEY PARAMETERS
V
RRM
4500V
I
F(AV)
3230A
I
FSM
20000A
Q
r
1800
µ
C
t
rr
7.0
µ
s
VOLTAGE RATINGS
Type Number
Repetitive Peak
Reverse Voltage
V
RRM
V
4500
Conditions
DSF21545SV45
V
RSM
= V
RRM
+ 100V
Outline type code: V.
See Package Details for further information.
Lower voltage grades available.
Fig. 1 Package outline
ORDERING INFORMATION
When ordering, select the required part number shown in the
Voltage Ratings selection table, e.g.:
DSF21545SV45
Note: Please use the complete part number when ordering and
quote this number in any future correspondance relating to your
order.
1/7
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DSF21545SV
CURRENT RATINGS
Symbol
Double Side Cooled
I
F(AV)
I
F(RMS)
I
F
Mean forward current
RMS value
Continuous (direct) forward current
Half wave resistive load, T
case
= 65
o
C
T
case
= 65
o
C
T
case
= 65
o
C
3230
5080
4680
A
A
A
Parameter
Conditions
Max.
Units
Single Side Cooled (Anode side)
I
F(AV)
I
F(RMS)
I
F
Mean forward current
RMS value
Continuous (direct) forward current
Half wave resistive load, T
case
= 65
o
C
T
case
= 65
o
C
T
case
= 65
o
C
2070
3255
2875
A
A
A
SURGE RATINGS
Symbol
I
FSM
It
I
FSM
It
I
FSM
I
2
t
2
2
Parameter
Surge (non-repetitive) forward current
Conditions
Max.
20
Units
kA
A
2
s
kA
A
2
s
kA
A
2
s
10ms half sine; with 0% V
RRM,
T
j
= 150 C
I t for fusing
Surge (non-repetitive) forward current
10ms half sine; with 50% V
RRM,
T
j
= 150 C
I t for fusing
Surge (non-repetitive) forward current
10ms half sine; with 100% V
RRM,
T
j
= 150
o
C
I
2
t for fusing
-
2
o
2
o
2.0 x 10
6
16
1.28 x 10
6
-
DEFINITION OF K FACTOR AND Q
RA1
Q
RA1
= 0.5x I
RR
(t
1
+ t
2
)
dI
R
/dt
0.5x I
RR
I
RR
t
1
t
2
k = t
1
/t
2
τ
2/7
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DSF21545SV
THERMAL AND MECHANICAL DATA
Symbol
Parameter
Conditions
Double side cooled
R
th(j-c)
Thermal resistance - junction to case
Single side cooled
Cathode dc
Clamping force 35.0kN
with mounting compound
On-state (conducting)
Double side
Single side
-
-
-
-
-55
34
0.015
0.002
0.004
150
150
48
o
Min.
dc
Anode dc
-
-
Max.
0.0075
0.015
Units
o
C/W
o
C/W
C/W
C/W
C/W
o
o
R
th(c-h)
Thermal resistance - case to heatsink
o
T
vj
T
stg
-
Virtual junction temperature
Storage temperature range
Clamping force
C
C
o
kN
CHARACTERISTICS
Symbol
V
FM
I
RRM
t
rr
Q
RA1
I
RM
K
V
TO
r
T
V
FRM
Forward voltage
Peak reverse current
Reverse recovery time
Recovered charge (50% chord)
Reverse recovery current
Soft factor
Threshold voltage
Slope resistance
Forward recovery voltage
At T
vj
= 150
o
C
At T
vj
= 150
o
C
di/dt = 1000A/µs, T
j
= 125
o
C
I
F
= 1000A, di
RR
/dt = 100A/µs
T
case
= 150
o
C, V
R
= 100V
Parameter
Conditions
At 3000A peak, T
case
= 25
o
C
At V
RRM
, T
case
= 150
o
C
Typ.
-
-
7.0
-
-
2
-
-
-
Max.
2.0
150
-
1800
500
-
1.25
0.25
75
Units
V
mA
µs
µC
A
-
V
mΩ
V
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DSF21545SV
CURVES
5000
Measured under
pulse conditions
500
Measured under
pulse conditions
4000
Instantaneous forward current I
F
- (A)
400
Instantaneous forward current I
F
- (A)
3000
300
T
j
= 150˚C
200
T
j
= 25˚C
2000
T
j
= 25˚C
T
j
= 150˚C
1000
100
0
0
1.0
2.0
3.0
Instantaneous forward voltage V
F
- (V)
4.0
0
0
0.5
1.0
1.5
Instantaneous forward voltage V
F
- (V)
2.0
Fig.2 Maximum (limit) forward characteristics
200
Current
waveform
V
FR
Voltage
waveform
δy
δx
di =
δy
dt
δx
Fig.3 Maximum (limit) forward characteristics
10000
Conditions:
T
j
= 150˚C,
V
R
= 100V
I
F
= 4000A
I
F
= 2000A
I
F
= 1000A
I
F
= 500A
I
F
= 200A
1000
I
F
= 100A
Transient forward votage V
FP
- (V)
T
j
= 125˚C limit
100
Reverse recovered charge Q
rr
- (µC)
150
T
j
= 25˚C limit
50
I
F
50µs
Q
S
=
0
QS
t
p
= 1ms
dI
R
/dt
0
500
1000
1500
2000
2500
Rate of rise of forward current dI
F
/dt - (A/µs)
3000
100
1
I
RR
10
100
Rate of rise of reverse current dI
R
/dt - (A/µs)
1000
Fig.4 Transient forward voltage vs rate of rise of
forward current
4/7
Fig.5 Recovered charge
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DSF21545SV
10000
Reverse recovery current I
rr
- (A)
1000
I
F
= 4000A
I
F
= 2000A
I
F
= 1000A
I
F
= 500A
I
F
= 200A
I
F
= 100A
Thermal impedance - junction to case, Z
th(j-c)
- ˚C/W
Conditions:
T
j
= 150 ˚C,
V
R
= 100V
0.01
d.c.Double side cooled
0.001
100
10
1
10
100
Rate of rise of reverse current dI
R
/dt - (A/µs)
1000
0.0001
0.001
0.01
0.1
1.0
Time - (s)
10
100
Fig.6 Typical reverse recovery current vs rate of rise of
forward current
Fig.7 Maximum (limit) transient thermal impedance -
junction to case - (˚C/W)
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