DSF8025SE / DSF8025SG
DSF8025SE / DSF8025SG
Fast Recovery Diode
Advance Information
Replaces March 2000 version, DS4146-5.1
FDS4146-6.0 January 2004
APPLICATIONS
I
I
I
I
I
I
Induction Heating
A.C. Motor Drives
Inverters And Choppers
Welding
High Frequency Rectification
UPS
KEY PARAMETERS
V
RRM
2500V
I
F(AV)
650A
I
FSM
7500A
Q
r
540
µ
C
t
rr
5.0
µ
s
FEATURES
I
I
I
Double side cooling
High surge capability
Low recovery charge
VOLTAGE RATINGS
Type Number
Repetitive Peak
Reverse Voltage
V
RRM
V
2500
2400
(See package details for further information)
2300
Fig. 1 Package outlines
2200
2100
2000
Conditions
DSF8025SE25
DSF8025SG25
DSF8025SE24
DSF8025SG24
DSF8025SE23
DSF8025SG23
DSF8025SE22
DSF8025SG22
DSF8025SE21
DSF8025SG21
DSF8025SE20
DSF8025SG20
V
RSM
= V
RRM
+ 100V
Package outline type code: E
Package outline type code: G
Lower voltage grades available.
ORDERING INFORMATION
When ordering, select the required part number shown in the
Voltage Ratings selection table, e.g.:
DSF8025SE23
for 2300V product in an 'E' outline,
DSF8025SG23
for 2300V product in an 'G' outline,
Note: Please use the complete part number when ordering and
quote this number in any future correspondance relating to your
order.
1/8
www.dynexsemi.com
DSF8025SE / DSF8025SG
CURRENT RATINGS
Symbol
Double Side Cooled
I
F(AV)
I
F(RMS)
I
F
Mean forward current
RMS value
Continuous (direct) forward current
Half wave resistive load, T
case
= 65
o
C
T
case
= 65
o
C
T
case
= 65
o
C
650
1020
785
A
A
A
Parameter
Conditions
Max.
Units
Single Side Cooled (Anode side)
I
F(AV)
I
F(RMS)
I
F
Mean forward current
RMS value
Continuous (direct) forward current
Half wave resistive load, T
case
= 65
o
C
T
case
= 65
o
C
T
case
= 65
o
C
385
604
465
A
A
A
SURGE RATINGS
Symbol
I
FSM
It
I
FSM
It
2
2
Parameter
Surge (non-repetitive) forward current
Conditions
Max.
7.5
Units
kA
A
2
s
kA
A
2
s
10ms half sine; with 0% V
RRM,
T
j
= 150 C
I t for fusing
Surge (non-repetitive) forward current
10ms half sine; with 50% V
RRM,
T
j
= 150 C
I t for fusing
2
o
2
o
281 x 10
3
6.0
180 x 10
3
THERMAL AND MECHANICAL DATA
Symbol
Parameter
Conditions
Double side cooled
R
th(j-c)
Thermal resistance - junction to case
Single side cooled
Cathode dc
Clamping force 8.0kN
with mounting compound
Forward (conducting)
Double side
Single side
-
-
-
-
-55
7.0
0.094
0.018
0.036
150
175
9.0
o
Min.
dc
Anode dc
-
-
Max.
0.047
0.094
Units
o
C/W
o
C/W
C/W
C/W
C/W
o
o
R
th(c-h)
Thermal resistance - case to heatsink
o
T
vj
T
stg
-
Virtual junction temperature
Storage temperature range
Clamping force
C
C
o
kN
2/8
www.dynexsemi.com
DSF8025SE / DSF8025SG
CHARACTERISTICS
Symbol
V
FM
I
RM
t
rr
Q
RA1
I
RR
K
V
TO
r
T
V
FRP
Forward voltage
Peak reverse current
Reverse recovery time
Recovered charge (50% chord)
Reverse recovery current
Soft factor
Threshold voltage
Slope resistance
Peak forward recovery voltage
At T
vj
= 150
o
C
At T
vj
= 150
o
C
di/dt = 1000A/µs, T
j
= 125
o
C
I
F
= 1000A, di
RR
/dt = 100A/µs
T
case
= 150
o
C, V
R
= 100V
Parameter
Conditions
At 1000A peak, T
case
= 25
o
C
At V
RRM
, T
case
= 150
o
C
Typ.
-
-
-
-
-
1.8
-
-
70
Max.
2.3
50
5.0
540
235
-
1.48
0.8
-
Units
V
mA
µs
µC
A
-
V
mΩ
V
DEFINITION OF K FACTOR AND Q
RA1
Q
RA1
= 0.5x I
RR
(t
1
+ t
2
)
dI
R
/dt
0.5x I
RR
I
RR
t
1
t
2
k = t
1
/t
2
τ
3/8
www.dynexsemi.com
DSF8025SE / DSF8025SG
CURVES
3500
Measured under pulse conditions
Tj = 25˚C
T
j
= 150˚C
500
Measured under pulse conditions
Tj = 25˚C
T
j
= 150˚C
3000
400
Instantaneous forward current I
F
- (A)
2500
2000
1500
1000
500
0
Instantaneous forward current I
F
- (A)
1.0
2.0
3.0
Instantaneous forward voltage V
F
- (V)
4.0
300
200
100
0
1.00
1.25
1.50
1.75
Instantaneous forward voltage V
F
- (V)
2.00
Fig.2 Maximum (limit) forward characteristics
Fig.3 Maximum (limit) forward characteristics
250
Current
waveform
10000
I
FM
Q
RA1
Conditions:
T
j
= 150˚C,
V
R
= 100V
V
FRP
200
Voltage
waveform
Reverse recovered charge, Q
r
- (µC)
Transient forward votage, V
FR
- (V)
δy
δx
di =
δy
dt
δx
t
p
= 1ms
dI
R
/dt
I
RR
0.5x I
RR
150
T
j
= 125˚C limit
1000
100
I
F
= 2000A
I
F
= 1000A
I
F
= 200A
T
j
= 25˚C limit
50
0
0
500
1000
1500
Rate of rise of forward current, dI
F
/dt - (A/µs)
2000
100
10
100
Rate of rise of reverse current dI
R
/dt - (A/µs)
1000
Fig.5 Transient forward voltage vs rate of rise of
forward current
4/8
Fig.6 Recovered charge
www.dynexsemi.com
DSF8025SE / DSF8025SG
1000
Conditions:
T
j
= 150˚C,
V
R
= 100V
0.1
A
B
Transient thermal impedance, Z
th(j-c)
- (˚C/W)
Anode side
cooled
C
Reverse recovery current, I
RR
- (A)
Double side
cooled
100
0.01
A: I
F
= 2000A
B: I
F
= 1000A
C: I
F
= 200A
10
1
10
Rate of rise of reverse current dI
R
/dt - (A/µs)
100
0.001
0.001
0.01
0.1
Time - (s)
1.0
10
Fig.7 Typical reverse recovery current vs rate of fall of
forward current
Fig.8 Maximum (limit) transient thermal impedance -
junction to case - (˚C/W)
5/8
www.dynexsemi.com
京公网安备 11010802033920号
EEWORLD
