UM7508D datasheet, PDF - EEWORLD Datasheet

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UM7508D: DescriptionPin Diode, 800V V(BR), Silicon, HERMETIC SEALED PACKAGE-2; CategoryDiscrete semiconductor diode; File Size286KB，9 Pages; ManufacturerMicrosemi; Websitehttps://www.microsemi.com

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UM7508D Overview

Pin Diode, 800V V(BR), Silicon, HERMETIC SEALED PACKAGE-2

UM7508D Parametric

Parameter Name	Attribute value
Is it lead-free?	Contains lead
Is it Rohs certified?	incompatible
Maker	Microsemi
package instruction	HERMETIC SEALED PACKAGE-2
Contacts	2
Reach Compliance Code	unknown
ECCN code	EAR99
Other features	LOW DISTORTION, METALLURGICALLY BONDED
application	ATTENUATOR; SWITCHING
Minimum breakdown voltage	800 V
Configuration	SINGLE
Maximum diode capacitance	1 pF
Nominal diode capacitance	0.8 pF
Diode component materials	SILICON
Maximum diode forward resistance	1 Ω
Diode resistance test current	50 mA
Diode resistance test frequency	100 MHz
Diode type	PIN DIODE
JESD-30 code	O-XRPM-F2
JESD-609 code	e0
Minority carrier nominal lifetime	3.5 µs
Number of components	1
Number of terminals	2
Maximum operating temperature	175 °C
Minimum operating temperature	-65 °C
Package body material	UNSPECIFIED
Package shape	ROUND
Package form	POST/STUD MOUNT
Peak Reflow Temperature (Celsius)	NOT SPECIFIED
Maximum power dissipation	7.5 W
Certification status	Not Qualified
Reverse test voltage	100 V
surface mount	NO
technology	POSITIVE-INTRINSIC-NEGATIVE
Terminal surface	TIN LEAD
Terminal form	FLAT
Terminal location	RADIAL
Maximum time at peak reflow temperature	NOT SPECIFIED

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UM7500

POWER PIN DIODES

DESCRIPTION

The UM7500 series features Microsemi’s

innovative passivated chip design which

takes advantage of the latest silicon wafer

bonding and junction passivation

techniques. This new series of PIN diodes

incorporates all of the desirable RF

properties of previous Microsemi diodes

plus extremely low leakages and very stable

reverse characteristics. Power dissipation

capability is assured by Microsemi’s

metallurgically bonded, fused in glass

construction. This technique continues to be

the optimum approach for applications

requiring reliable, high power diodes.

Low leakage distortion is achieved by

maintaining high carrier lifetime and accurately

controlling I-region thickness throughout the

process. The UM7500 series is designed for use

in a broad range of RF and microwave switch and

attenuator circuits. The packages make this series

suitable for many high-end medical applications

such as MRI and CAT scan equipment. For

military applications, the new series is capable of

meeting all the requirements of MIL-STD-750

including HTRB screening at 80% of rated

voltage at 150

KEY FEATURES

WWW .

Microsemi

Voltage Ratings to 1400 Volt

Fully Passivated PIN Chip

Low Leakage, IR < 0.5

µA

Void Less, Particle Free Construction

Hermetic Fused in Glass

Low Loss, Low Distortion

Surface Mount Package Available

Metallurgically Bonded, Thermally

Matched Construction

Compatible with automatic insertion

equipment

IMPORTANT:

For the most current data, consult

MICROSEMI’s

website:

http://www.microsemi.com

ABSOLUTE MAXIMUM RATINGS AT 25º C

(UNLESS OTHERWISE SPECIFIED)

Package

Condition

25 C Pin Temperature

APPLICATIONS/BENEFITS

Isolated stud package available

Surface mount package available

RoHS compliant packaging

available: use UMX7501B, etc.

10 W 15

C/W

5.5 W 27.5

C/W

1.5 W

10 W 15

C/W

7.5 W 20

C/W

7.5 W

C/W

35 kW

-65 C to + 175 C

B & E

½ in. total length to 25

C Contact

Free Air

25 C Stud Temperature

All

25 C Stud Temperature

25 C End Cap Temperature

1 us pulse (Single)

OPERATING AND STORAGE

TEMPERATURE RANGE

VOLTAGE RATINGS

Reverse Voltage @ 0.5 uA

100V

200V

400V

600V

800V

1000V

1200V

1400V

UM7501

UM7502

UM7504

UM7506

UM7508

UM7510

UM7512

UM7514

UM7500



2005

Rev. 0, 2005-11-03

Microsemi

Page 1

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