DG406BP25
DG406BP25
Gate Turn-off Thyristor
Replaces version, DS4090-3.0
DS4090-4.0 November 2005 (LN24306)
APPLICATIONS
I
Variable speed A.C. motor drive inverters (VSD-AC).
I
Uninterruptable Power Supplies
I
High Voltage Converters.
I
Choppers.
I
Welding.
I
Induction Heating.
I
DC/DC Converters.
KEY PARAMETERS
I
TCM
1200A
V
DRM
2500V
I
T(AV)
500A
dV
D
/dt
1000V/
µ
s
300A/
µ
s
di
T
/dt
FEATURES
I
Double Side Cooling.
I
High Reliability In Service.
I
High Voltage Capability.
I
Fault Protection Without Fuses.
I
High Surge Current Capability.
I
Turn-off Capability Allows Reduction In Equipment
Size And Weight. Low Noise Emission Reduces Acoustic
Cladding Necessary For Environmental Requirements.
Outline type code: P.
See Package Details for further information.
VOLTAGE RATINGS
Type Number
Repetitive Peak Off-state Voltage Repetitive Peak Reverse Voltage
V
DRM
V
RRM
V
V
2500
16
Conditions
DG406BP25
T
vj
= 125
o
C, I
DM
= 50mA,
I
RRM
= 50mA
CURRENT RATINGS
Symbol
I
TCM
I
T(AV)
I
T(RMS)
Parameter
Conditions
Max.
1200
500
630
Units
A
A
A
Repetitive peak controllable on-state current V
D
= V
DRM
, T
j
= 125
o
C, di
GQ
/dt = 30A/µs, Cs = 1.5µF
Mean on-state current
RMS on-state current
T
HS
= 80
o
C. Double side cooled. Half sine 50Hz.
T
HS
= 80
o
C. Double side cooled. Half sine 50Hz.
1/19
DG406BP25
SURGE RATINGS
Symbol
I
TSM
I
2
t
di
T
/dt
Parameter
Surge (non-repetitive) on-state current
I
2
t for fusing
Critical rate of rise of on-state current
Conditions
10ms half sine. T
j
= 125
o
C
10ms half sine. T
j
=125
o
C
V
D
= 2000V, I
T
= 1000A, T
j
= 125
o
C, I
FG
≥
30A,
Rise time > 1.0µs
To 66% V
DRM
; R
GK
≤
1.5Ω, T
j
= 125
o
C
dV
D
/dt
Rate of rise of off-state voltage
To 66% V
DRM
; V
RG
= -2V, T
j
= 125
o
C
Peak stray inductance in snubber circuit
I
T
= 1000A, V
D
= V
DRM
, T
j
= 125
o
C,
-
di
GQ
/dt = 30A/µs, Cs = 1.0µF
1000
200
V/µs
nH
Max.
8.0
0.32 x 10
6
300
500
Units
kA
A
2
s
A/µs
V/µs
L
S
GATE RATINGS
Symbol
V
RGM
I
FGM
P
FG(AV)
P
RGM
di
GQ
/dt
t
ON(min)
t
OFF(min)
Parameter
Peak reverse gate voltage
Peak forward gate current
Average forward gate power
Peak reverse gate power
Rate of rise of reverse gate current
Minimum permissable on time
Minimum permissable off time
Conditions
This value maybe exceeded during turn-off
Min.
-
20
-
-
15
20
100
Max.
16
70
10
15
60
-
-
Units
V
A
W
kW
A/µs
µs
µs
THERMAL RATINGS AND MECHANICAL DATA
Symbol
Parameter
Conditions
Double side cooled
R
th(j-hs)
DC thermal resistance - junction to heatsink
surface
Anode side cooled
Cathode side cooled
R
th(c-hs)
T
vj
T
OP
/T
stg
-
Contact thermal resistance
Virtual junction temperature
Operating junction/storage temperature range
Clamping force
Clamping force 12.0kN
With mounting compound
per contact
Min.
-
-
-
-
-
-40
11.0
Max.
0.041
0.07
0.1
0.009
125
125
15.0
Units
o
C/W
C/W
C/W
C/W
o
o
o
o
C
C
o
kN
2/19
DG406BP25
CHARACTERISTICS
T
j
= 125
o
C unless stated otherwise
Symbol
V
TM
I
DM
I
RRM
V
GT
I
GT
I
RGM
E
ON
t
d
t
r
E
OFF
t
gs
t
gf
t
gq
Q
GQ
Q
GQT
I
GQM
On-state voltage
Peak off-state current
Peak reverse current
Gate trigger voltage
Gate trigger current
Reverse gate cathode current
Turn-on energy
Delay time
Rise time
Turn-off energy
Storage time
Fall time
Gate controlled turn-off time
Turn-off gate charge
Total turn-off gate charge
Peak reverse gate current
I
T
= 1000A, V
DM
= 2500V
Snubber Cap Cs = 1.0µF,
di
GQ
/dt = 30A/µs
Parameter
Conditions
At 1000A peak, I
G(ON)
= 4A d.c.
V
DRM
= 2500V, V
RG
= 0V
At V
RRM
V
D
= 24V, I
T
= 100A, T
j
= 25
o
C
V
D
= 24V, I
T
= 100A, T
j
= 25
o
C
V
RGM
= 16V, No gate/cathode resistor
V
D
= 2000V
I
T
= 1000A, dI
T
/dt = 300A/µs
I
FG
= 30A, rise time
≤
1.0µs
Min.
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
Max.
2.5
50
50
1.0
1.5
50
1040
1.5
3.0
2300
14.0
1.5
15.5
3000
6000
420
Units
V
mA
mA
V
A
mA
mJ
µs
µs
mJ
µs
µs
µs
µC
µC
A
3/19
DG406BP25
CURVES
2.0
4.0
Gate trigger voltage V
GT
- (V)
1.5
3.0
Gate trigger current I
GT
- (A)
1.0
2.0
V
GT
0.5
I
GT
0
-50
-25
0
25
50
75 100
Junction temperature T
j
- (˚C)
125
0
150
1.0
Fig.1 Maximum gate trigger voltage/current vs junction temperature
4.0
Instantaneous on-state current I
TM
- (kA)
3.0
T
j
= 25˚C
T
j
= 125˚C
2.0
1.0
Maximum permissible turn-off current I
TCM
- (kA)
Measured under pulse conditions.
I
G(ON)
= 4.0A
Half sine wave 10ms
1.5
1.0
0.5
Conditions:
T
j
= 125˚C, V
DM
= V
DRM
,
dI
GQ
/dt = 30A/µs
2.0
0
1.0
2.0
3.0
4.0
Instantaneous on-state voltage V
TM
- (V)
Fig.2 On-state characteristics
5.0
0
0.25 0.50 0.75 1.00 1.25
1.5 1.75
Snubber capacitance C
S
- (µF)
Fig.3 Maximum dependence of I
TCM
on C
S
4/19
DG406BP25
0.05
0.04
Thermal impedance - ˚C/W
dc
0.03
0.02
0.01
0
0.001
0.01
0.1
Time - (s)
1.0
10
100
Fig.4 Maximum (limit) transient thermal impedance - double side cooled
Peak half sine wave on-state current - (kA)
20
15
10
5
0
0.0001
0.001
0.01
Pulse duration - (s)
0.1
1.0
Fig.5 Surge (non-repetitive) on-state current vs time
5/19
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