DIM200PHM33-F000
Half Bridge IGBT Module
Replaces DS5606-4
DS5606-5 October 2011 (LN28814)
FEATURES
10µs Short Circuit Withstand
High Thermal Cycling Capability
Soft Punch Through Silicon
Isolated AlSiC Base with AlN Substrates
Lead Free Construction
KEY PARAMETERS
V
CES
V
CE(sat)
* (typ)
I
C
(max)
I
C(PK)
(max)
3300V
2.8V
200A
400A
* Measured at the auxiliary terminals
APPLICATIONS
1(E1/C2)
High Reliability Inverters
Motor Controllers
Traction Auxiliaries
5(E )
1
2(C1)
3(E2)
7(E )
6(G )
2
2
The Powerline range of high power modules includes
half bridge, chopper, dual, single and bi-directional
switch configurations covering voltages from 1200V to
6500V and currents up to 2400A.
The DIM200PHM33-F000 is a half bridge 3300V, soft
punch through n-channel enhancement mode,
insulated gate bipolar transistor (IGBT) chopper
module configured with the lower arm of the bridge
controlled.. The IGBT has a wide reverse bias safe
operating area (RBSOA). This device is optimised for
traction drives and other applications requiring high
thermal cycling capability.
The module incorporates an electrically isolated base
plate and low inductance construction enabling circuit
designers to optimise circuit layouts and utilise
grounded heat sinks for safety
.
4(G )
8(C )
1
1
Fig. 1 Circuit configuration
ORDERING INFORMATION
Order As:
DIM200PHM33-F000
Note: When ordering, please use the complete part
number
Outline type code: P
(See Fig. 11 for further information)
Fig. 2 Package
Caution:
This device is sensitive to electrostatic discharge. Users should follow ESD handling procedures
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DIM200PHM33-F000
ABSOLUTE MAXIMUM RATINGS
Stresses above those listed under ‘Absolute Maximum Ratings’ may cause permanent damage to the device. In
extreme conditions, as with all semiconductors, this may include potentially hazardous rupture of the package.
Appropriate safety precautions should always be followed. Exposure to Absolute Maximum Ratings may affect
device reliability.
T
case
= 25°C unless stated otherwise
Symbol
V
CES
V
GES
I
C
I
C(PK)
P
max
It
V
isol
Q
PD
2
Parameter
Collector-emitter voltage
Gate-emitter voltage
Continuous collector current
Peak collector current
Max. transistor power dissipation
Diode I t value
Isolation voltage – per module
Partial discharge – per module
2
Test Conditions
V
GE
= 0V
Max.
3300
±20
Units
V
V
A
A
kW
kA s
V
pC
2
T
case
= 90°C
1ms, T
case
= 115°C
T
case
= 25°C, T
j
= 150°C
V
R
= 0, t
p
= 10ms, T
j
= 125ºC
Commoned terminals to base plate.
AC RMS, 1 min, 50Hz
IEC1287, V
1
= 3500V, V
2
= 2600V, 50Hz RMS
200
400
2.6
20
6000
10
THERMAL AND MECHANICAL RATINGS
Internal insulation material:
Baseplate material:
Creepage distance:
Clearance:
CTI (Comparative Tracking Index):
AlN
AlSiC
33mm
20mm
350
Symbol
R
th(j-c)
R
th(j-c)
R
th(c-h)
T
j
T
stg
Parameter
Thermal resistance – transistor
Thermal resistance – Diode
Thermal resistance –
case to heatsink (per module)
Junction temperature
Diode
Storage temperature range
Screw torque
-
Test Conditions
Continuous dissipation -
junction to case
Continuous dissipation -
junction to case
Mounting torque 5Nm
(with mounting grease)
Transistor
Min
-
-
-
-
-
-40
-
-
Typ.
-
-
-
-
-
-
-
-
Max
48
96
16
150
125
125
5
4
Units
°C/kW
°C/kW
°C/kW
°C
°C
°C
Nm
Nm
Mounting – M6
Electrical connections – M5
2/8
Caution: This device is sensitive to electrostatic discharge. Users should follow ESD handling procedures.
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DIM200PHM33-F000
ELECTRICAL CHARACTERISTICS
T
case
= 25°C unless stated otherwise.
Symbol
I
CES
I
GES
V
GE(TH)
V
CE(sat)
I
F
I
FM
V
F
†
†
Parameter
Collector cut-off current
Test Conditions
V
GE
= 0V, V
CE
= V
CES
V
GE
= 0V, V
CE
= V
CES
, T
case
= 125°C
Min
Typ
Max
1
15
Units
mA
mA
nA
Gate leakage current
Gate threshold voltage
Collector-emitter
saturation voltage
Diode forward current
Diode maximum forward
current
Diode forward voltage
V
GE
= ± 20V, V
CE
= 0V
I
C
= 20mA, V
GE
= V
CE
V
GE
= 15V, I
C
= 200A
V
GE
= 15V, I
C
= 200A, T
j
= 125°C
DC
t
p
= 1ms
I
F
= 200A
I
F
= 200A, T
j
= 125°C
5.5
400
6.5
2.8
3.6
200
400
2.9
3.0
36
5
0.55
40
500
7.0
V
V
V
A
A
V
V
nF
μC
nF
nH
μ
C
ies
Q
g
C
res
L
M
R
INT
Input capacitance
Gate charge
Reverse transfer capacitance
Module inductance
Internal transistor resistance
V
CE
= 25V, V
GE
= 0V, f = 1MHz
±15V
V
CE
= 25V, V
GE
= 0V, f = 1MHz
T
j
= 125°C, V
CC
= 2500V
SC
Data
Short circuit current, I
SC
t
p
≤ 10μs, V
GE
≤ 15V
V
CE (max)
= V
CES
– L x dI/dt
IEC 60747-9
Note:
†
Measured at the auxiliary terminals
* L is the circuit inductance + L
M
*
930
A
Caution:
This device is sensitive to electrostatic discharge. Users should follow ESD handling procedures
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DIM200PHM33-F000
ELECTRICAL CHARACTERISTICS
T
case
= 25°C unless stated otherwise
Symbol
t
d(off)
t
f
E
OFF
t
d(on)
t
r
E
ON
Q
rr
I
rr
E
rec
Parameter
Turn-off delay time
Fall time
Turn-off energy loss
Turn-on delay time
Rise time
Turn-on energy loss
Diode reverse recovery charge
Diode reverse recovery current
Diode reverse recovery energy
I
C
= 200A
V
GE
= ±15V
V
CE
= 1800V
C
ge
= 56nF
L
S
~ 100nH
R
G(ON)
= 7.5,
R
G(OFF)
= 16.5
I
F
= 200A
V
CE
= 1800V
dI
F
/dt = 1600A/μs
R
G(ON)
= 16.5
R
G(OFF)
= 16.5
Test Conditions
Min
Typ.
1.95
170
220
1180
225
290
80
144
75
Max
Units
μs
ns
mJ
ns
ns
mJ
μC
A
mJ
T
case
= 125°C unless stated otherwise
Symbol
Parameter
Turn-off delay time
Fall time
Turn-off energy loss
Turn-on delay time
Rise time
Turn-on energy loss
Diode reverse recovery charge
Diode reverse recovery current
Diode reverse recovery energy
Test Conditions
Min
Typ.
2.2
Max
Units
μs
ns
mJ
ns
ns
mJ
μC
A
mJ
t
d(off)
t
f
E
OFF
t
d(on)
t
r
E
ON
Q
rr
I
rr
E
rec
I
C
= 200A
V
GE
= ±15V
V
CE
= 1800V
C
ge
= 56nF
L
S
~ 100nH
R
G(ON)
= 7.5,
R
G(OFF)
= 16.5
I
F
= 200A
V
CE
= 1800V
dI
F
/dt = 1600A/μs
R
G(ON)
= 16.5
R
G(OFF)
= 16.5
190
265
1150
280
390
125
155
130
4/8
Caution:
This device is sensitive to electrostatic discharge. Users should follow ESD handling procedures.
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DIM200PHM33-F000
Fig. 3 Typical output characteristics
Fig. 4 Typical output characteristics
Fig. 5 Typical switching energy vs collector current
Fig. 6 Typical switching energy vs gate resistance
Caution:
This device is sensitive to electrostatic discharge. Users should follow ESD handling procedures
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