3
DIM400DDS12-A000
Replaces DS5841-1.1
11.5
±0.2
Dual Switch IGBT Module
DS5841-2 November 2009 (LN26744)
FEATURES
±0.2
6
10µs
18
±0.2
Short Circuit Withstand
High Thermal Cycling Capability
44
±0.2
Non Punch Through Silicon
57
±0.2
Isolated Cu Base with Al
2
O
3
Substrates
Lead Free Construction
6 x
O7
KEY PARAMETERS
V
CES
V
CE(sat)
* (typ)
I
C
(max)
I
C(PK)
(max)
14
±0.2
28
±0.5
1200V
2.2 V
screwing depth
400A
8
max
800A
* Measured at the power busbars, not the auxiliary terminals
55.2
± 0.3
11.85
±0.2
APPLICATIONS
High Reliability Inverters
Motor Controllers
1(E)
5
(E)
6
(G)
2(C)
12
(C)
11
(G)
The Powerline range of high power modules includes
half bridge, chopper, dual, single and bi-directional
switch configurations covering voltages from 600V to
3300V and currents up to 2400A.
The DIM400DDS12-A000 is a dual switch 1200V, n-
channel enhancement mode, insulated gate bipolar
transistor (IGBT) module. The IGBT has a wide
reverse bias safe operating area (RBSOA) plus 10μs
short circuit withstand. This device is optimised for
traction drives and other applications requiring high
thermal cycling capability.
The module incorporates an electrically isolated base
plate and low inductance construction enabling circuit
designers to optimise circuit layouts and utilise
grounded heat sinks for safety
.
7
(C)
3(C)
4(E)
10
(E)
Fig. 1 Circuit configuration
ORDERING INFORMATION
Order As:
DIM400DDS12-A000
Note: When ordering, please use the complete part
number
Outline type code: D
(See Fig. 11 for further information)
Fig. 2 Package
Caution:
This device is sensitive to electrostatic discharge. Users should follow ESD handling procedures
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DIM400DDS12-A000
ABSOLUTE MAXIMUM RATINGS
Stresses above those listed under ‘Absolute Maximum Ratings’ may cause permanent damage to the device. In
extreme conditions, as with all semiconductors, this may include potentially hazardous rupture of the package.
Appropriate safety precautions should always be followed. Exposure to Absolute Maximum Ratings may affect
device reliability.
T
case
= 25°C unless stated otherwise
Symbol
V
CES
V
GES
I
C
I
C(PK)
P
max
It
V
isol
2
Parameter
Collector-emitter voltage
Gate-emitter voltage
Continuous collector current
Peak collector current
Max. transistor power dissipation
Diode I t value
Isolation voltage – per module
2
Test Conditions
V
GE
= 0V
Max.
1200
±20
Units
V
V
A
A
W
kA s
V
2
T
case
= 85°C
1ms, T
case
= 115°C
T
case
= 25°C, T
j
= 150°C
V
R
= 0, t
p
= 10ms, T
j
= 125ºC
Commoned terminals to base plate.
AC RMS, 1 min, 50Hz
400
800
3470
25
2500
THERMAL AND MECHANICAL RATINGS
Internal insulation material:
Baseplate material:
Creepage distance:
Clearance:
CTI (Comparative Tracking Index):
Al
2
O
3
Cu
20mm
10mm
350
Symbol
R
th(j-c)
R
th(j-c)
R
th(c-h)
T
j
T
stg
Parameter
Thermal resistance –
transistor (per switch)
Thermal resistance –
diode (per switch)
Thermal resistance –
case to heatsink (per module)
Junction temperature
Diode
Storage temperature range
-
Test Conditions
Continuous dissipation - junction
to case
Continuous dissipation - junction
to case
Mounting torque 5Nm
(with mounting grease)
Transistor
Min
-
-
-
-
-
-40
-
-
-
Typ.
-
-
-
-
-
-
-
-
-
Max
36
80
8
150
125
125
5
2
10
Units
°C/kW
°C/kW
°C/kW
°C
°C
°C
Nm
Nm
Nm
Mounting – M6
Screw torque
Electrical connections – M4
Electrical connections – M8
2/8
Caution: This device is sensitive to electrostatic discharge. Users should follow ESD handling procedures.
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DIM400DDS12-A000
ELECTRICAL CHARACTERISTICS
T
case
= 25°C unless stated otherwise.
Symbol
I
CES
I
GES
V
GE(TH)
V
CE(sat)
I
F
I
FM
V
F
†
†
Parameter
Collector cut-off current
Test Conditions
V
GE
= 0V, V
CE
= V
CES
V
GE
= 0V, V
CE
= V
CES
, T
case
= 125°C
Min
Typ
Max
0.5
12
2
Units
mA
mA
μA
V
V
V
A
A
V
V
nF
μC
nF
Gate leakage current
Gate threshold voltage
Collector-emitter
saturation voltage
Diode forward current
Diode maximum forward current
Diode forward voltage
V
GE
= ± 20V, V
CE
= 0V
I
C
= 20mA, V
GE
= V
CE
V
GE
= 15V, I
C
= 400A
V
GE
= 15V, I
C
= 400A, T
j
= 125°C
DC
t
p
= 1ms
I
F
= 400A
I
F
= 400A, T
j
= 125°C
2.1
2.1
45
4
4.5
5.5
2.2
2.6
6.5
2.8
3.2
400
800
2.4
2.4
C
ies
Q
g
C
res
L
M
R
INT
Input capacitance
Gate charge
Reverse transfer capacitance
Module inductance – per switch
Internal transistor resistance –
per switch
V
CE
= 25V, V
GE
= 0V, f = 1MHz
±15V
V
CE
= 25V, V
GE
= 0V, f = 1MHz
20
270
T
j
= 125°C, V
CC
= 900V
I
1
2750
nH
μ
A
SC
Data
Short circuit current, I
SC
t
p
≤ 10μs, V
GE
≤ 15V
V
CE (max)
= V
CES
– L x dI/dt
IEC 60747-9
*
I
2
2250
A
Note:
†
Measured at the power busbars, not the auxiliary terminals
*
L is the circuit inductance + L
M
Caution:
This device is sensitive to electrostatic discharge. Users should follow ESD handling procedures
3
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8
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DIM400DDS12-A000
ELECTRICAL CHARACTERISTICS
T
case
= 25°C unless stated otherwise
Symbol
t
d(off)
t
f
E
OFF
t
d(on)
t
r
E
ON
Q
rr
I
rr
E
rec
Parameter
Turn-off delay time
Fall time
Turn-off energy loss
Turn-on delay time
Rise time
Turn-on energy loss
Diode reverse recovery charge
Diode reverse recovery current
Diode reverse recovery energy
I
F
= 400A
V
CE
= 600V
dI
F
/dt = 4700A/μs
I
C
= 400A
V
GE
= ±15V
V
CE
= 600V
R
G(ON)
= 3.3
R
G(OFF)
= 3.3
L
S
~ 100nH
60
190
100
40
55
300
17
mJ
ns
ns
mJ
μC
A
mJ
Test Conditions
Min
Typ.
710
70
Max
Units
ns
ns
T
case
= 125°C unless stated otherwise
Symbol
Parameter
Turn-off delay time
Fall time
Turn-off energy loss
Turn-on delay time
Rise time
Turn-on energy loss
Diode reverse recovery charge
Diode reverse recovery current
Diode reverse recovery energy
Test Conditions
Min
Typ.
890
Max
Units
ns
ns
mJ
ns
ns
mJ
μC
A
mJ
t
d(off)
t
f
E
OFF
t
d(on)
t
r
E
ON
Q
rr
I
rr
E
rec
I
C
= 400A
V
GE
= ±15V
V
CE
= 600V
R
G(ON)
= 3.3
R
G(OFF)
= 3.3
L
S
~ 100nH
100
60
440
125
60
I
F
= 400A
V
CE
= 600V
dI
F
/dt = 4000A/μs
85
320
32
4/8
Caution:
This device is sensitive to electrostatic discharge. Users should follow ESD handling procedures.
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DIM400DDS12-A000
Fig. 3 Typical output characteristics
Fig. 4 Typical output characteristics
Fig. 5 Typical switching energy vs collector current
Fig. 6 Typical switching energy vs gate resistance
Caution:
This device is sensitive to electrostatic discharge. Users should follow ESD handling procedures
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