DIM400PBM17-A000
IGBT Bi-Directional Switch Module
Replaces DS5524-2.3
DS5524-3 November 2010 (LN27710)
FEATURES
10µs Short Circuit Withstand
High Thermal Cycling Capability
Non Punch Through Silicon
Isolated AlSiC Base with AlN Substrates
Lead Free construction
KEY PARAMETERS
V
DRM
V
T
*
I
C
I
C(PK)
(typ)
(max)
(max)
±1700V
4.9V
400A
800A
* Measured at the power busbars, not the auxiliary terminals
APPLICATIONS
Matrix Converters
Brushless Motor Controllers
Frequency Converters
1(E1/E2)
2(C1)
5(E1)
4(G1)
3(C2)
6(G2)
7(E2)
The Powerline range of high power modules includes
half bridge, chopper, dual, single and bi-directional
switch configurations covering voltages from 1200V to
6500V and currents up to 2400A.
The DIM400PBM17-A000 is a bi-directional switch
1700V, n-channel enhancement mode, insulated gate
bipolar transistor (IGBT) module. The IGBT has a
wide reverse bias safe operating area (RBSOA) plus
10μs short circuit withstand. This device is optimised
for applications requiring high thermal cycling
capability.
The module incorporates an electrically isolated base
plate and low inductance construction enabling circuit
designers to optimise circuit layouts and utilise
grounded heat sinks for safety
.
Fig. 1 Circuit configuration
ORDERING INFORMATION
Order As:
DIM400PBM17-A000
Note: When ordering, please use the complete part
number
Outline type code: P
(See Fig. 11 for further information)
Fig. 2 Package
Caution:
This device is sensitive to electrostatic discharge. Users should follow ESD handling procedures
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DIM400PBM17-A000
ABSOLUTE MAXIMUM RATINGS
Stresses above those listed under ‘Absolute Maximum Ratings’ may cause permanent damage to the device. In
extreme conditions, as with all semiconductors, this may include potentially hazardous rupture of the package.
Appropriate safety precautions should always be followed. Exposure to Absolute Maximum Ratings may affect
device reliability.
T
case
= 25°C unless stated otherwise
Symbol
V
CES
V
GES
I
C
I
C(PK)
P
max
It
V
isol
Q
PD
2
Parameter
Collector-emitter voltage
Gate-emitter voltage
Continuous collector current
Peak collector current
Max. transistor power dissipation
Diode I t value
Isolation voltage – per module
Partial discharge – per module
2
Test Conditions
V
GE
= 0V
Max.
±1700
±20
Units
V
V
A
A
W
kA s
V
pC
2
T
case
= 50°C
1ms, T
case
= 110°C
T
case
= 25°C, T
j
= 150°C
V
R
= 0, t
p
= 10ms, T
j
= 125ºC
Commoned terminals to base plate.
AC RMS, 1 min, 50Hz
IEC1287, V
1
= 1800V, V
2
= 1300V, 50Hz RMS
400
800
3470
30
4000
10
THERMAL AND MECHANICAL RATINGS
Internal insulation material:
Baseplate material:
Creepage distance:
Clearance:
CTI (Comparative Tracking Index):
AlN
AlSiC
33mm
20mm
350
Symbol
R
th(j-c)
R
th(j-c)
R
th(c-h)
T
j
T
stg
Parameter
Thermal resistance – transistor
Thermal resistance – diode
Thermal resistance –
case to heatsink (per module)
Junction temperature
Diode
Storage temperature range
Screw torque
-
Test Conditions
Continuous dissipation -
junction to case
Continuous dissipation -
junction to case
Mounting torque 5Nm
(with mounting grease)
Transistor
Min
-
-
-
-
-
-40
-
-
Typ.
-
-
-
-
-
-
-
-
Max
36
80
16
150
125
125
5
4
Units
°C/kW
°C/kW
°C/kW
°C
°C
°C
Nm
Nm
Mounting – M6
Electrical connections – M5
2/8
Caution: This device is sensitive to electrostatic discharge. Users should follow ESD handling procedures.
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DIM400PBM17-A000
ELECTRICAL CHARACTERISTICS
T
case
= 25°C unless stated otherwise.
Symbol
I
CES
I
GES
V
GE(TH)
V
CE(sat)
†
Parameter
Collector cut-off current
Test Conditions
V
GE
= 0V, V
CE
= V
CES
V
GE
= 0V, V
CE
= V
CES
, T
case
= 125°C
Min
Typ
Max
1
12
2
Units
mA
mA
μA
V
V
V
V
V
Gate leakage current
Gate threshold voltage
Collector-emitter
saturation voltage
On-state voltage - (measured
across terminals 2 and 3)
Diode forward current
Diode maximum forward current
Diode forward voltage
V
GE
= ± 20V, V
CE
= 0V
I
C
= 20mA, V
GE
= V
CE
V
GE
= 15V, I
C
= 400A
V
GE
= 15V, I
C
= 400A, T
j
= 125°C
V
GE
= 15V, I
C
= 400A
V
GE
= 15V, I
C
= 400A, T
j
= 125°C
DC
t
p
= 1ms
I
F
= 400A
I
F
= 400A, T
j
= 125°C
2.2
2.3
30
4.5
4.5
5.5
2.7
3.4
4.9
5.7
6.5
3.2
4.0
V
T
I
F
I
FM
V
F
†
400
800
2.5
2.6
A
A
V
V
nF
μC
nF
C
ies
Q
g
C
res
L
M
R
INT
Input capacitance
Gate charge
Reverse transfer capacitance
Module inductance
Internal resistance
V
CE
= 25V, V
GE
= 0V, f = 1MHz
±15V
V
CE
= 25V, V
GE
= 0V, f = 1MHz
20
270
T
j
= 125°C, V
CC
= 1000V
t
p
≤ 10μs, V
GE
≤ 15V
V
CE (max)
= V
CES
– L x dI/dt
IEC 60747-9
*
nH
μ
SC
Data
Short circuit current, I
SC
1600
A
Note:
†
Measured at the power busbars, not the auxiliary terminals
*
L is the circuit inductance + L
M
Caution:
This device is sensitive to electrostatic discharge. Users should follow ESD handling procedures
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DIM400PBM17-A000
ELECTRICAL CHARACTERISTICS
T
case
= 25°C unless stated otherwise
Symbol
t
d(off)
t
f
E
OFF
t
d(on)
t
r
E
ON
Q
rr
I
rr
E
rec
Parameter
Turn-off delay time
Fall time
Turn-off energy loss
Turn-on delay time
Rise time
Turn-on energy loss
Diode reverse recovery charge
Diode reverse recovery current
Diode reverse recovery energy
I
F
= 400A
V
CE
= 900V
dI
F
/dt = 3000A/μs
I
C
= 400A
V
GE
= ±15V
V
CE
= 900V
R
G(ON)
= 4.7
R
G(OFF)
= 4.7
L
S
~ 100nH
120
250
250
150
100
230
70
mJ
ns
ns
mJ
μC
A
mJ
Test Conditions
Min
Typ.
1150
100
Max
Units
ns
ns
T
case
= 125°C unless stated otherwise
Symbol
Parameter
Turn-off delay time
Fall time
Turn-off energy loss
Turn-on delay time
Rise time
Turn-on energy loss
Diode reverse recovery charge
Diode reverse recovery current
Diode reverse recovery energy
Test Conditions
Min
Typ.
1400
Max
Units
ns
ns
mJ
ns
ns
mJ
μC
A
mJ
t
d(off)
t
f
E
OFF
t
d(on)
t
r
E
ON
Q
rr
I
rr
E
rec
I
C
= 400A
V
GE
= ±15V
V
CE
= 900V
R
G(ON)
= 4.7
R
G(OFF)
= 4.7
L
S
~ 100nH
130
180
400
250
170
I
F
= 400A
V
CE
= 900V
dI
F
/dt = 2500A/μs
170
270
100
4/8
Caution:
This device is sensitive to electrostatic discharge. Users should follow ESD handling procedures.
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DIM400PBM17-A000
Fig. 3 Typical output characteristics
Fig. 4 Typical output characteristics
Fig. 5 Typical switching energy vs collector current
Fig. 6 Typical switching energy vs gate resistance
Caution:
This device is sensitive to electrostatic discharge. Users should follow ESD handling procedures
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