DIM800DCM12-A000
DIM800DCM12-A000
IGBT Chopper Module
Replaces July 2002 version DS5548-2.0
DS5548-
FEATURES
I
I
I
I
10µs Short Circuit Withstand
High Thermal Cycling Capability
Non Punch Through Silicon
Isolated MMC Base with AlN Substrates
KEY PARAMETERS
V
CES
(typ)
V
CE(sat)
*
(max)
I
C
(max)
I
C(PK)
1200V
2.2V
800A
1600A
*(measured at the power busbars and not the auxiliary terminals)
APPLICATIONS
I
I
I
Inverters
Motor Controllers
Traction Drives
5(E
1
)
1(E1)
2(C2)
6(G
1
)
The Powerline range of modules includes half bridge, dual,
chopper, bi-directional and single switch configurations covering
voltages from 600V to 3300V and currents up to 2400A.
The DIM800DCM12-A000 is a 1200V, n channel
enhancement mode insulated gate bipolar transistor (IGBT)
chopper module. The IGBT has a wide reverse bias safe
operating area (RBSOA) plus full 10µs short circuit withstand.
This module is optimised for applications requiring high thermal
cycling capability.
The module incorporates an electrically isolated base plate
and low inductance construction enabling circuit designers to
optimise circuit layouts and utilise grounded heat sinks for safety.
7(C
1
)
3(C1)
4(E2)
Fig. 1 Chopper circuit diagram
ORDERING INFORMATION
Order As:
DIM800DCM12-A000
Note: When ordering, please use the whole part number.
Outline type code:
D
(See package details for further information)
Fig. 2 Electrical connections - (not to scale)
Caution: This device is sensitive to electrostatic discharge. Users should follow ESD handling procedures.
1/10
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DIM800DCM12-A000
ABSOLUTE MAXIMUM RATINGS - PER ARM
Stresses above those listed under 'Absolute Maximum Ratings' may cause permanent damage to the device. In extreme
conditions, as with all semiconductors, this may include potentially hazardous rupture of the package. Appropriate safety precautions
should always be followed. Exposure to Absolute Maximum Ratings may affect device reliability.
T
case
= 25˚C unless stated otherwise
Symbol
V
CES
V
GES
I
C
I
C(PK)
P
max
I
2
t
Parameter
Collector-emitter voltage
Gate-emitter voltage
Continuous collector current
Peak collector current
Max. transistor power dissipation
Diode I
2
t value (IGBT arm)
Diode I
2
t value (Diode arm)
V
isol
Q
PD
Isolation voltage - per module
Partial discharge - per module
Commoned terminals to base plate. AC RMS, 1 min, 50Hz
IEC1287. V
1
= 1800V, V
2
= 1300V, 50Hz RMS
T
case
= 85˚C
1ms, T
case
= 115˚C
T
case
= 25˚C, T
j
= 150˚C
V
R
= 0, t
p
= 10ms, T
vj
= 125˚C
V
GE
= 0V
-
Test Conditions
Max.
1200
±20
800
1600
6940
100
225
2500
10
Units
V
V
A
A
W
kA
2
s
kA
2
s
V
PC
2/10
Caution: This device is sensitive to electrostatic discharge. Users should follow ESD handling procedures.
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DIM800DCM12-A000
THERMAL AND MECHANICAL RATINGS
Internal insulation material:
Baseplate material:
Creepage distance:
Clearance:
CTI (Critical Tracking Index):
Symbol
R
th(j-c)
AlN
AlSiC
20mm
10mm
175
Parameter
Thermal resistance - transistor (per arm)
Test Conditions
Continuous dissipation -
junction to case
R
th(j-c)
Thermal resistance - diode (IGBT arm)
Thermal resistance - diode (Diode arm)
R
th(c-h)
Thermal resistance - case to heatsink
(per module)
T
j
Junction temperature
Continuous dissipation -
junction to case
Mounting torque 5Nm
(with mounting grease)
Transistor
Diode
T
stg
-
Storage temperature range
Screw torque
Mounting - M6
Electrical connections - M4
Electrical connections - M8
-
-
-
–40
-
-
-
-
-
-
-
-
-
150
125
125
5
2
10
˚C
˚C
˚C
Nm
Nm
Nm
-
-
-
-
-
-
40
26.7
8
˚C/kW
˚C/kW
˚C/kW
Min.
-
Typ.
-
Max.
18
Units
˚C/kW
Caution: This device is sensitive to electrostatic discharge. Users should follow ESD handling procedures.
3/10
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DIM800DCM12-A000
ELECTRICAL CHARACTERISTICS
T
case
= 25˚C unless stated otherwise.
Symbol
I
CES
Parameter
Collector cut-off current
Test Conditions
V
GE
= 0V, V
CE
= V
CES
V
GE
= 0V, V
CE
= V
CES
, T
case
= 125˚C
I
GES
V
GE(TH)
V
CE(sat)†
Gate leakage current
Gate threshold voltage
Collector-emitter saturation voltage
V
GE
=
±20V,
V
CE
= 0V
I
C
= 40mA, V
GE
= V
CE
V
GE
= 15V, I
C
= 800A
V
GE
= 15V, I
C
= 800A, , T
case
= 125˚C
I
F
I
FM
V
F†
Diode forward current
Diode maximum forward current
Diode forward voltage (IGBT arm)
Diode forward voltage (Diode arm)
Diode forward voltage (IGBT arm)
Diode forward voltage (Diode arm)
C
ies
L
M
R
INT
SC
Data
Input capacitance
Module inductance - per arm
Internal transistor resistance - per arm
Short circuit. I
SC
V
CE
= 25V, V
GE
= 0V, f = 1MHz
-
-
T
j
= 125˚C, V
CC
= 900V,
t
p
≤
10µs, V
CE(max)
= V
CES
– L*. di/dt
IEC 60747-9
Note:
†
Measured at the power busbars and not the auxiliary terminals)
* L is the circuit inductance + L
M
I
1
I
2
I
F
= 800A, T
case
= 125˚C
DC
t
p
= 1ms
I
F
= 800A
Min.
-
-
-
4.5
-
-
-
-
-
-
-
-
-
-
-
Typ.
-
-
-
5.5
2.2
2.6
-
-
2.1
1.8
2.1
1.7
90
20
0.27
5500
4500
Max.
1
25
4
6.5
2.8
3.2
800
1600
2.4
2.1
2.4
2.0
-
-
-
-
-
Units
mA
mA
µA
V
V
V
A
A
V
V
V
V
nF
nH
mΩ
A
A
4/10
Caution: This device is sensitive to electrostatic discharge. Users should follow ESD handling procedures.
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DIM800DCM12-A000
ELECTRICAL CHARACTERISTICS
T
case
= 25˚C unless stated otherwise
Symbol
t
d(off)
t
f
E
OFF
t
d(on)
t
r
E
ON
Q
g
Q
rr
I
rr
E
REC
Parameter
Turn-off delay time
Fall time
Turn-off energy loss
Turn-on delay time
Rise time
Turn-on energy loss
Gate charge
Diode reverse recovery charge
Diode reverse current
Diode reverse recovery energy
I
F
= 800A, V
R
= 600V,
dI
F
/dt = 4200A/µs
Test Conditions
I
C
= 800A
V
GE
=
±15V
V
CE
= 600V
R
G(ON)
= R
G(OFF)
= 2.7Ω
L ~ 100nH
Min.
-
-
-
-
-
-
-
-
-
-
Typ.
1250
170
130
250
250
80
9
80
380
30
Max.
-
-
-
-
-
-
-
-
-
-
Units
ns
ns
mJ
ns
ns
mJ
µC
µC
A
mJ
T
case
= 125˚C unless stated otherwise
Symbol
t
d(off)
t
f
E
OFF
t
d(on)
t
r
E
ON
Q
rr
I
rr
E
REC
Parameter
Turn-off delay time
Fall time
Turn-off energy loss
Turn-on delay time
Rise time
Turn-on energy loss
Diode reverse recovery charge
Diode reverse current
Diode reverse recovery energy
I
F
= 800A, V
R
= 600V,
dI
F
/dt = 4000A/µs
Test Conditions
I
C
= 800A
V
GE
=
±15V
V
CE
= 600V
R
G(ON)
= R
G(OFF)
= 2.7Ω
L ~ 100nH
Min.
-
-
-
-
-
-
-
-
-
Typ.
1500
200
160
400
220
120
160
450
60
Max.
-
-
-
-
-
-
-
-
-
Units
ns
ns
mJ
ns
ns
mJ
µC
A
mJ
Caution: This device is sensitive to electrostatic discharge. Users should follow ESD handling procedures.
5/10
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