SPECIALTY MEMORY CIRCUIT, CDIP40, CERAMIC, DIP-40
| Parameter Name | Attribute value |
| Is it Rohs certified? | incompatible |
| Maker | STMicroelectronics |
| Parts packaging code | DIP |
| package instruction | CERAMIC, DIP-40 |
| Contacts | 40 |
| Reach Compliance Code | not_compliant |
| Maximum clock frequency (fCLK) | 4 MHz |
| JESD-30 code | R-CDIP-T40 |
| JESD-609 code | e0 |
| memory density | 1024 bit |
| Memory IC Type | MEMORY CIRCUIT |
| memory width | 8 |
| Number of functions | 1 |
| Number of terminals | 40 |
| word count | 128 words |
| character code | 128 |
| Operating mode | ASYNCHRONOUS |
| Maximum operating temperature | 125 °C |
| Minimum operating temperature | -55 °C |
| organize | 128X8 |
| Package body material | CERAMIC, METAL-SEALED COFIRED |
| encapsulated code | DIP |
| Encapsulate equivalent code | DIP40,.6 |
| Package shape | RECTANGULAR |
| Package form | IN-LINE |
| Peak Reflow Temperature (Celsius) | NOT SPECIFIED |
| power supply | 5 V |
| Certification status | Not Qualified |
| Maximum slew rate | 0.25 mA |
| Maximum supply voltage (Vsup) | 5.25 V |
| Minimum supply voltage (Vsup) | 4.75 V |
| Nominal supply voltage (Vsup) | 5 V |
| surface mount | NO |
| technology | CMOS |
| Temperature level | MILITARY |
| Terminal surface | Tin/Lead (Sn/Pb) |
| Terminal form | THROUGH-HOLE |
| Terminal pitch | 2.54 mm |
| Terminal location | DUAL |
| Maximum time at peak reflow temperature | NOT SPECIFIED |
| width | 15.24 mm |
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