Page Mode DRAM, 256KX1, 150ns, MOS, CQCC18
| Parameter Name | Attribute value |
| Is it Rohs certified? | incompatible |
| Maker | FUJITSU |
| package instruction | QCCN, LCC18,.3X.5 |
| Reach Compliance Code | unknown |
| Maximum access time | 150 ns |
| I/O type | SEPARATE |
| JESD-30 code | R-XQCC-N18 |
| JESD-609 code | e0 |
| memory density | 262144 bit |
| Memory IC Type | PAGE MODE DRAM |
| memory width | 1 |
| Number of terminals | 18 |
| word count | 262144 words |
| character code | 256000 |
| Maximum operating temperature | 110 °C |
| Minimum operating temperature | -55 °C |
| organize | 256KX1 |
| Output characteristics | 3-STATE |
| Package body material | CERAMIC |
| encapsulated code | QCCN |
| Encapsulate equivalent code | LCC18,.3X.5 |
| Package shape | RECTANGULAR |
| Package form | CHIP CARRIER |
| power supply | 5 V |
| Certification status | Not Qualified |
| refresh cycle | 256 |
| Nominal supply voltage (Vsup) | 5 V |
| surface mount | YES |
| technology | MOS |
| Temperature level | OTHER |
| Terminal surface | Tin/Lead (Sn/Pb) |
| Terminal form | NO LEAD |
| Terminal pitch | 1.27 mm |
| Terminal location | QUAD |





| MB81256-15-WCV | MB81256-10M | |
|---|---|---|
| Description | Page Mode DRAM, 256KX1, 150ns, MOS, CQCC18 | Page Mode DRAM, 256KX1, 100ns, MOS, PDIP16 |
| Is it Rohs certified? | incompatible | incompatible |
| Maker | FUJITSU | FUJITSU |
| package instruction | QCCN, LCC18,.3X.5 | DIP, DIP16,.3 |
| Reach Compliance Code | unknown | unknown |
| Maximum access time | 150 ns | 100 ns |
| I/O type | SEPARATE | SEPARATE |
| JESD-30 code | R-XQCC-N18 | R-PDIP-T16 |
| JESD-609 code | e0 | e0 |
| memory density | 262144 bit | 262144 bit |
| Memory IC Type | PAGE MODE DRAM | PAGE MODE DRAM |
| memory width | 1 | 1 |
| Number of terminals | 18 | 16 |
| word count | 262144 words | 262144 words |
| character code | 256000 | 256000 |
| Maximum operating temperature | 110 °C | 70 °C |
| organize | 256KX1 | 256KX1 |
| Output characteristics | 3-STATE | 3-STATE |
| Package body material | CERAMIC | PLASTIC/EPOXY |
| encapsulated code | QCCN | DIP |
| Encapsulate equivalent code | LCC18,.3X.5 | DIP16,.3 |
| Package shape | RECTANGULAR | RECTANGULAR |
| Package form | CHIP CARRIER | IN-LINE |
| power supply | 5 V | 5 V |
| Certification status | Not Qualified | Not Qualified |
| refresh cycle | 256 | 256 |
| Nominal supply voltage (Vsup) | 5 V | 5 V |
| surface mount | YES | NO |
| technology | MOS | MOS |
| Temperature level | OTHER | COMMERCIAL |
| Terminal surface | Tin/Lead (Sn/Pb) | Tin/Lead (Sn/Pb) |
| Terminal form | NO LEAD | THROUGH-HOLE |
| Terminal pitch | 1.27 mm | 2.54 mm |
| Terminal location | QUAD | DUAL |