DMA30P1600HR
Standard Rectifier
V
RRM
I
FAV
V
F
=
2x 1600 V
=
=
30 A
1.23 V
Phase leg
Part number
DMA30P1600HR
Backside: isolated
1
2
3
Features / Advantages:
●
Planar passivated chips
●
Very low leakage current
●
Very low forward voltage drop
●
Improved thermal behaviour
Applications:
●
Diode for main rectification
●
For single and three phase
bridge configurations
Package:
ISO247
●
Isolation Voltage: 3600 V~
●
Industry standard outline
●
RoHS compliant
●
Epoxy meets UL 94V-0
●
Soldering pins for PCB mounting
●
Backside: DCB ceramic
●
Reduced weight
●
Advanced power cycling
Disclaimer Notice
Information furnished is believed to be accurate and reliable. However, users should independently
evaluate the suitability of and test each product selected for their own applications. Littelfuse products are not designed for,
and may not be used in, all applications. Read complete Disclaimer Notice at
www.littelfuse.com/disclaimer-electronics.
IXYS reserves the right to change limits, conditions and dimensions.
Data according to IEC 60747and per semiconductor unless otherwise specified
20191129b
© 2019 IXYS all rights reserved
DMA30P1600HR
Rectifier
Symbol
V
RSM
V
RRM
I
R
V
F
Definition
max. repetitive reverse blocking voltage
reverse current
Ratings
Conditions
T
VJ
= 25°C
T
VJ
= 25°C
T
VJ
= 25°C
T
VJ
= 150°C
T
VJ
= 25°C
T
VJ
= 150 °C
T
VJ
= 175 °C
T
VJ
= 175 °C
min.
typ.
max. non-repetitive reverse blocking voltage
max. Unit
1700
V
1600
40
1.5
1.28
1.57
1.23
1.63
30
0.82
13.5
V
µA
mA
V
V
V
V
A
V
mΩ
K/W
115
300
325
255
275
450
440
325
315
W
A
A
A
A
A²s
A²s
A²s
A²s
pF
V
R
= 1600 V
V
R
= 1600 V
I
F
=
I
F
=
I
F
=
I
F
=
30 A
60 A
30 A
60 A
forward voltage drop
I
FAV
V
F0
r
F
R
thJC
R
thCH
P
tot
I
FSM
average forward current
T
C
= 105 °C
180° sine
threshold voltage
slope resistance
for power loss calculation only
thermal resistance junction to case
thermal resistance case to heatsink
total power dissipation
max. forward surge current
1.3 K/W
0.3
T
C
= 25°C
t = 10 ms; (50 Hz), sine
t = 8,3 ms; (60 Hz), sine
t = 10 ms; (50 Hz), sine
t = 8,3 ms; (60 Hz), sine
T
VJ
= 45°C
V
R
= 0 V
T
VJ
= 150 °C
V
R
= 0 V
T
VJ
= 45°C
V
R
= 0 V
T
VJ
= 150 °C
V
R
= 0 V
T
VJ
= 25°C
10
I²t
value for fusing
t = 10 ms; (50 Hz), sine
t = 8,3 ms; (60 Hz), sine
t = 10 ms; (50 Hz), sine
t = 8,3 ms; (60 Hz), sine
C
J
junction capacitance
V
R
= 400 V; f = 1 MHz
IXYS reserves the right to change limits, conditions and dimensions.
Data according to IEC 60747and per semiconductor unless otherwise specified
20191129b
© 2019 IXYS all rights reserved
DMA30P1600HR
Package
Symbol
I
RMS
T
VJ
T
op
T
stg
Weight
M
D
F
C
d
Spp/App
d
Spb/Apb
V
ISOL
isolation voltage
t = 1 second
t = 1 minute
50/60 Hz, RMS; I
ISOL
≤
1 mA
mounting torque
mounting force with clip
creepage distance on surface | striking distance through air
terminal to terminal
terminal to backside
ISO247
Definition
RMS current
virtual junction temperature
operation temperature
storage temperature
Ratings
Conditions
per terminal
min.
-55
-55
-55
typ.
max.
50
175
150
150
Unit
A
°C
°C
°C
g
Nm
N
mm
mm
V
V
6
0.8
20
2.7
4.1
3600
3000
1.2
120
Product Marking
Part description
D
M
A
30
P
1600
HR
=
=
=
=
=
=
=
Diode
Standard Rectifier
(up to 1800V)
Current Rating [A]
Phase leg
Reverse Voltage [V]
ISO247 (3)
Logo
Part Number
Date Code
Lot#
Location
IXYS
XXXXXXXXX
yywwZ
123456
Ordering
Standard
Ordering Number
DMA30P1600HR
Marking on Product
DMA30P1600HR
Delivery Mode
Tube
Quantity
30
Code No.
512442
Equivalent Circuits for Simulation
I
V
0
R
0
threshold voltage
slope resistance *
Rectifier
* on die level
T
VJ
= 175°C
V
0 max
R
0 max
0.82
10.9
V
mΩ
IXYS reserves the right to change limits, conditions and dimensions.
Data according to IEC 60747and per semiconductor unless otherwise specified
20191129b
© 2019 IXYS all rights reserved
DMA30P1600HR
Outlines ISO247
E
Q
A
A2
A3
S
Ø
P
2x
E3
2x D3
Dim.
D
2x
E2
D1
4
1
L1
E1
L
2
3
D2
2x
b2
3x
b
C
A1
b4
2x
e
Millimeter
min
max
A
4.70
5.30
A1 2.21
2.59
A2 1.50
2.49
A3
typ. 0.05
b
0.99
1.40
b2 1.65
2.39
b4 2.59
3.43
c
0.38
0.89
D 20.79 21.45
D1
typ. 8.90
D2
typ. 2.90
D3
typ. 1.00
E 15.49 16.24
E1
typ. 13.45
E2 4.31
5.48
E3
typ. 4.00
e
5.46 BSC
L
19.80 20.30
L1
-
4.49
Ø P 3.55
3.65
Q
5.38
6.19
S
6.14 BSC
Inches
min
max
0.185 0.209
0.087 0.102
0.059 0.098
typ. 0.002
0.039 0.055
0.065 0.094
0.102 0.135
0.015 0.035
0.819 0.844
typ. 0.350
typ. 0.114
typ. 0.039
0.610 0.639
typ. 0.530
0.170 0.216
typ. 0.157
0.215 BSC
0.780 0.799
-
0.177
0.140 0.144
0.212 0.244
0.242 BSC
1
2
3
IXYS reserves the right to change limits, conditions and dimensions.
Data according to IEC 60747and per semiconductor unless otherwise specified
20191129b
© 2019 IXYS all rights reserved
DMA30P1600HR
Rectifier
60
250
50 Hz, 80% V
RRM
V
R
= 0 V
40
200
I
F
[A]
20
T
VJ
= 150°C
T
VJ
= 125°C
T
VJ
= 25°C
0
0.5
1.0
1.5
2.0
I
FSM
[A]
T
VJ
= 45°C
It
[A s]
2
2
T
VJ
= 45°C
T
VJ
= 150°C
150
T
VJ
= 150°C
10
2
100
0.001
0.01
0.1
1
1
2
2
3
4 5 6 7 8 910
V
F
[V]
Fig. 1 Forward current versus
voltage drop per diode
60
dc =
1
0.5
0.4
0.33
0.17
0.08
t [s]
Fig. 2 Surge overload current
vs. time per diode
60
R
thHA
=
0.6 K/W
0.8 K/W
1.0 K/W
2.0 K/W
4.0 K/W
8.0 K/W
t [ms]
Fig. 3 I t versus time per diode
50
40
40
P
tot
30
I
F(AV)M
[A]
20
dc =
1
0.5
0.4
0.33
0.17
0.08
[W]
20
10
0
0
10
20
30
0
25
50
75 100 125 150 175 200
0
0
50
100
150
200
I
F(AV)M
[A]
Fig. 4 Power dissipation vs. direct output current
and ambient temperature per diode
1.4
1.2
1.0
T
amb
[°C]
T
C
[°C]
Fig. 5 Max. forward current vs.
case temperature per diode
Constants for Z
thJC
calculation:
i
R
thi
(K/W)
t
i
(s)
0.0004
0.0020
0.0040
0.0240
0.1500
Z
thJC
0.8
1 0.060
2 0.170
3 0.310
4 0.470
5 0.290
[K/W]
0.6
0.4
0.2
0.0
1
10
100
1000
10000
t [ms]
Fig. 6 Transient thermal impedance junction to case vs. time per diode
IXYS reserves the right to change limits, conditions and dimensions.
Data according to IEC 60747and per semiconductor unless otherwise specified
20191129b
© 2019 IXYS all rights reserved
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