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BD139

Description
Power Bipolar Transistor, 1.5A I(C), 80V V(BR)CEO, 1-Element, NPN, Silicon, TO-126, Plastic/Epoxy, 3 Pin, PLASTIC PACKAGE-3
CategoryDiscrete semiconductor    The transistor   
File Size311KB,3 Pages
ManufacturerMicro Commercial Components (MCC)
Download Datasheet Parametric View All

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BD139 Overview

Power Bipolar Transistor, 1.5A I(C), 80V V(BR)CEO, 1-Element, NPN, Silicon, TO-126, Plastic/Epoxy, 3 Pin, PLASTIC PACKAGE-3

BD139 Parametric

Parameter NameAttribute value
Is it Rohs certified?incompatible
MakerMicro Commercial Components (MCC)
Parts packaging codeSIP
package instructionPLASTIC PACKAGE-3
Contacts3
Reach Compliance Codeunknown
ECCN codeEAR99
Maximum collector current (IC)1.5 A
Collector-emitter maximum voltage80 V
ConfigurationSINGLE
Minimum DC current gain (hFE)25
JEDEC-95 codeTO-126
JESD-30 codeR-PSFM-T3
JESD-609 codee0
Humidity sensitivity level1
Number of components1
Number of terminals3
Maximum operating temperature150 °C
Package body materialPLASTIC/EPOXY
Package shapeRECTANGULAR
Package formFLANGE MOUNT
Peak Reflow Temperature (Celsius)240
Polarity/channel typeNPN
Maximum power dissipation(Abs)1.25 W
Certification statusNot Qualified
surface mountNO
Terminal surfaceTin/Lead (Sn/Pb)
Terminal formTHROUGH-HOLE
Terminal locationSINGLE
Maximum time at peak reflow temperatureNOT SPECIFIED
Transistor component materialsSILICON
MCC
Micro Commercial Components
TM
  omponents
20736 Marilla
Street Chatsworth

  !"#
$ %    !"#
BD135
BD137
BD139

)HDWXUHV
0D[LPXP5DWLQJV
Rating
Collector-Emitter Voltage
Lead Free Finish/RoHS Compliant ("P" Suffix designates
RoHS Compliant. See ordering information)
Case Material:Molded Plastic. UL Flammability
Classification Rating 94V-0 and MSL Rating 1
DC Current Gain - h
FE
= 40 (Min) @I
C
= 150mAdc
Complementary with BD136, BD138, BD140
Symbol
BD135
BD137
BD139
V
CEO
Value
45
60
80
45
60
80
5.0
1.5
0.5
1.25
10
12.5
100
-55 to +150
10
100
Unit
Vdc
Power Transistors
NPN Silicon
45,60,80 Volts

A
K
N
Collector-Base Voltage
BD135
BD137
BD139
Emitter-Base Voltage
Collector Current
Base Current
Total Device Dissipation @T
A
=25
Derate above 25
Total Device Dissipation @T
C
=25
Derate above 25
Operating & Storage Temperature Range
Maximum Thermal Resistance Junction to
Case
Maximum Thermal Resistance Junction to
Ambient Air
V
CBO
V
EBO
I
C
I
B
P
D
P
D
T
J
, T
STG
R

-&
R

-$
Vdc
Vdc
Adc
Adc
Watt
mW/
Watt
mW/
E
D

B
M
:
:
:
:
:
:
/W
:
/W
:
:

1
2
3
L
G



(OHFWULFDO &KDUDFWHULVWLFV # 
°
& 8QOHVV 2WKHUZLVH 6SHFLILHG
Symbol
Parameter
Collector-Emitter Sustaining Voltage*
(I
C
=30mA,I
B
=0) BD135
BD137
BD139
Collector Cutoff Current
(V
CB
=30Vdc, I
E
=0)
(V
CB
=30Vdc, I
E
=0, T
C
=125 )
Emitter Cutoff Current
(V
BE
=5.0Vdc, I
C
=0)
DC Current Gain*
(I
C
=5mAdc, V
CE
=2Vdc)
(I
C
=0.5Adc, V
CE
=2Vdc)
(I
C
=150mAdc, V
CE
=2Vdc)
Collector-Emitter Saturation Voltage
(I
C
=500mAdc, I
B
=50mAdc)
Base-Emitter ON Voltage
(V
CE
=2V, I
C=
0.5A)
Min
Max
Units
Vdc
45
60
80
0.1
10
10
µAdc
µAdc
C
2)) &+$5$&7(5,67,&6
BV
CEO
I
CBO
F
PIN 1.
PIN 2.
PIN 3.
DIMENSIONS
Q
EMITTER
COLLECTOR
BASE
I
EBO
h
FE(1)
h
FE(2)
h
FE(3)
V
CE(sat)
V
BE(on)
:
J
25
25
40
250
0.5
1
Vdc
Vdc
CLASSIFICATION OF H
FE(3)
Rank
Range
6
40-
100
10
63- 160
16
100-
250










L
M
N
Q
 

0.291
0.417
0.602
4
0.118
0.026
0.046
0.090TYP
0.098
0.083
0.000
0.043
0.018




0.307
0.433
0.618
1
0.126
0.034
0.054
0.114
0.091
0.012
0.059
0.024






7.40
7.80
10.60
11.00
15.30
15.70
3.90
4.10
3.00
3.20
0.66
0.86
1.17
1.37
2.290TYP
2.50
2.90
2.10
2.30
0.00
0.30
1.10
1.50
0.45
0.60
 
*Pulse test: Pulse width 300
µsec,
Duty cycle 2%
www.mccsemi.com
Revision:
7
1 of 3
2008/01/01

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