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BDY29

Description
Transistor
CategoryDiscrete semiconductor    The transistor   
File Size165KB,1 Pages
ManufacturerAdvanced Semiconductor, Inc.
Download Datasheet Parametric View All

BDY29 Overview

Transistor

BDY29 Parametric

Parameter NameAttribute value
MakerAdvanced Semiconductor, Inc.
package instruction,
Reach Compliance Codeunknown
Maximum collector current (IC)30 A
ConfigurationSingle
Minimum DC current gain (hFE)15
Maximum operating temperature175 °C
Polarity/channel typeNPN
Maximum power dissipation(Abs)220 W
surface mountNO

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