BDY29 datasheet, PDF - EEWORLD Datasheet

BDY29: DescriptionPower Bipolar Transistor, 30A I(C), 1-Element, NPN, Silicon, TO-3, Metal, 2 Pin; CategoryDiscrete semiconductor The transistor; File Size71KB，1 Pages; ManufacturerBaneasa SA

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BDY29 Overview

Power Bipolar Transistor, 30A I(C), 1-Element, NPN, Silicon, TO-3, Metal, 2 Pin

Parameter Name	Attribute value
Maker	Baneasa SA
package instruction	FLANGE MOUNT, O-MBFM-P2
Reach Compliance Code	unknown
Shell connection	COLLECTOR
Maximum collector current (IC)	30 A
Configuration	SINGLE
Minimum DC current gain (hFE)	15
JEDEC-95 code	TO-3
JESD-30 code	O-MBFM-P2
Number of components	1
Number of terminals	2
Package body material	METAL
Package shape	ROUND
Package form	FLANGE MOUNT
Polarity/channel type	NPN
Certification status	Not Qualified
surface mount	NO
Terminal form	PIN/PEG
Terminal location	BOTTOM
Transistor component materials	SILICON
Nominal transition frequency (fT)	0.8 MHz

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