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BUV48

Description
Bipolar Transistors;NPN;15A;400V;TO-3PN
CategoryDiscrete semiconductor   
File Size214KB,2 Pages
ManufacturerInchange Semiconductor
Download Datasheet Parametric View All

BUV48 Overview

Bipolar Transistors;NPN;15A;400V;TO-3PN

BUV48 Parametric

Parameter NameAttribute value
MakerInchange Semiconductor
package instruction,
Reach Compliance Codeunknown
isc
Silicon NPN Power Transistor
BUV48
DESCRIPTION
·High
Voltage Capability
·High
Current Capability
·Fast
Switching Speed
·Minimum
Lot-to-Lot variations for robust device
performance and reliable operation
APPLICATIONS
·Switching
regulators
·Inverters
·Solenoid
and relay drivers
·Motor
controls
·Deflection
circuits
Absolute maximum ratings(Ta=25
)
SYMBOL
V
CBO
V
CEO
V
EBO
I
C
I
CM
I
B
I
BM
P
C
T
j
T
stg
PARAMETER
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current-Continuous
Collector Current-Peak
Base Current-Continuous
Base Current-peak
Collector Power Dissipation
@T
C
=25℃
Junction Temperature
Storage Temperature Range
VALUE
850
400
7
15
30
5
20
150
150
-65~150
UNIT
V
V
V
A
A
A
A
W
THERMAL CHARACTERISTICS
SYMBOL
R
th j-c
PARAMETER
Thermal Resistance,Junction to Case
MAX
1.0
UNIT
℃/W
isc website
www.iscsemi.com
1
isc & iscsemi
is registered trademark

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